The focus of this study is mono-layer polymer light emitting diode (PLED). The emitting layer is poly-p-phenylenebenzobisoxazole (PBO). PBO is a fully conjugated heterocyclic aromatic rigid-rod polymer. Anode is indium-tin-oxide (ITO). Cathode is aluminum (Al). We used UV epoxy resin to package PLED devices, then measured current-voltage response, electroluminescence (EL) emission, and device lifetime. We demonstrate that the packaged mono-layer PBO LED reduced its demise from water and oxygen. Device lifetime increased from 1 hour to several hundred hours. At a larger bias voltage or current, emission intensity and device efficiency became higher. But decay rate increased leading to shortened device lifetime. Device temperature appeared linearly with current density. A red shift of the EL emission was observed. The £fmax. of emission spectra moved from 534 nm (initial) to 582 nm (after 100 hrs). After thermal annealing at 120¢J for ten hours, threshold voltage increased from 5 V to 12 V, current density decreased to several 10 mA/cm2, luminous intensity improved several ten times to 10-2 cd/m2, emission color changed from yellow-green to orange, luminous efficiency improved from 10-7 to 10-4 cd/A, but device lifetime declined to less than 20 hrs.

Poly-p-phenylenebenzobisoxazole (PBO) and carbon nanotube (CNT) contain fully conjugated rod like backbone entailing excellent mechanical properties, thermo -oxidative stability and solvent resistance. Rigid-rod PBO is commonly processed by dissolving in methanesulfonic acid or Lewis acid. A CNT of multi-wall carbon nanotube (MWNT) was dissolved in a Lewis acid solution of PBO for dispersion, and then spun for thin film. MWNT concentration in the films was from zero up to 5 wt. %. Compared to that of pure PBO film, all PBO/MWNT composite films retained same but enhanced UV-Vis absorption peaks, according to MWNT concentration, showing that PBO and MWNT did not have overlapping electron orbitals affecting their energy gaps. The composite films were excited at 325 nm using a He-Cd laser for photoluminescence (PL) emission. All PL spectra had maximum intensity at 540 nm indicative of yellow-green light emission. The composite films were fabricated as light emitting diodes using indium-tin-oxide/glass as substrate and anode, as well as vacuum evaporated Al as cathode for respectively hole and electron injectors. In these light emitting devices, MWNT doped PBO would decrease threshold voltage for about 2 V. Up to 0.1 wt. % of MWNT, the device emission current was increased two orders of magnitude than those of the devices without MWNT. Further increase of MWNT caused a successive decrease in electroluminescence emission intensity attributed to a quench effect from aggregations of MWNTs. UV epoxy resin was applied to package the mono-layer and bilayer PBO light emitting devices. The UV epoxy resin had some gas release during encapsulation. The devices were packaged with vacuum and without vacuum encapsulation. It was demonstrated that the device encapsulation reduced its demise from water and oxygen. The vacuum encapsulation could remove gaseous volatile of the device to inhibit oxygen and moisture to prolong device lifetime. The main degradation of light emitting device was the oxidization of cathode. The interactions between nitrogen of PBO and H2O caused the formation of hydrogen bonding at room temperature. Oxygen and moisture diffused into PBO polymer and were suspected to form mid-gap state for the polymer. The mid energy band disappeared upon heat treatment before encapsulation. A device under a higher bias voltage was found to have a shorter lifetime, but a larger EL emission intensity. The EL emission intensity was not a constant under a constant current bias. The vacuum encapsulated device had two or twenty times lifetime than, respectively, the device encapsulation without vacuum evacuation or in ambient conditions. The sandwich structure of ITO/PBO/Al had no observable photovoltaic effect due to insufficient exciton separation into electrons and holes. Poly(2,3-dihydro thieno-1,4-dioxin):polystyrenesulfonate (PEDOT:PSS), a hole transferring medium, was spun into a thin-film between PBO and indium-tin-oxide to facilitate photovoltaic (PV) effect by forming a donor-acceptor interlayer to separate and to transport photoinduced charges. Optimum PBO thickness for the PV heterojunctions was about 71 nm at which the hole transferring PEDOT:PSS generated the maximum short circuit current (Isc) at a thickness of 115 nm. By using a layer of lithium fluoride (LiF) as an electron transferring layer adhering to Al cathode, the most open circuit voltage (Voc) and the maximum short circuit current (Isc) were achieved with a LiF thickness of 1-2 nm due to possible electric dipole effect leading to an increase of Voc from 0.7 V to 0.92 V and of Isc from about 0.1