The performance of multilayer thin film optical filters depends largely on the microstructure of the component layers. This microstructure varies with the deposition parameters inside the coating chamber. By controlling these parameters, optical filters can be produced to exacting specifications. In 1947, R. M. Rice established the technique of bombarding the substrate with electrons of several kilovolts as the fils were being deposited. This process improved the durability of zinc sulfide films dramatically. This study was performed to quantitatively analyze the effects of bombardment on film microstructure and subsequent effects on optical and mechanical properties. I installed an electron source filament inside the coating chamber and electrically isolated the substrate holder, which was connected to a positive high voltage supply. An accelerating loop placed just above the filament enhanced its efficiency. The source was calibrated by measuring the current through the substrate holder. Single layer films of five different materials were deposited, each at its own set of electron bombardment parameters. The microstructure was analyzed with an X-ray diffractometer and a transmission electron microscope. Optical properties were measured with guided waves, induced absorption, and spectrophotometric analysis. Film durability was analyzed with scotch tape, eraser, and controlled humidity tests. Antimony trioxide films showed a shift in lattice orientation, but this did not affect columnar structure or macroscopic quantities. Potassium hexafluorozirconate films showed elimination of both crystal structure and columnar growth, resulting in slightly reduced durability and some absorption. Silicon monoxide films suffered no change in structure or properties. Zinc sulfide films demonstrated the change in crystal structure, which was quantified and shown to improve moisture resistance. Optical properties were unaffected. Magnesium fluoride films showed a slight increase in crystallinity with only subtle changes in durability and optical properties. Generally, electron bombardment reduced or rearranged crystal structure. The effects on macroscopic properties varied with each material, with no clear trend evident.

by Chung Pui Shan. / Thesis (M.Phil.)--Chinese University of Hong Kong, 2001. / Includes bibliographical references (leaves 105-110). / Abstracts in English and Chinese. / Abstract --- p.i / Acknowledgements --- p.iii / Table of contents --- p.v / Chapter Chapter 1. --- Introduction --- p.1 / Chapter 1.1 --- Metal clusters embedded in fused silica glass --- p.2 / Chapter 1.2 --- Ion implantation of metal clusters --- p.3 / Chapter 1.3 --- Feature of MEVVA implantation --- p.5 / Chapter 1.4 --- Motivation and organization of this thesis --- p.7 / Chapter Chapter 2. --- Sample Preparation and Characterization Methods / Chapter 2.1 --- MEVVA implantation --- p.9 / Chapter 2.2 --- TRIM simulation --- p.11 / Chapter 2.3 --- Sample preparation --- p.14 / Chapter 2.4 --- Rutherford backscattering spectroscopy (RBS) --- p.16 / Chapter 2.5 --- X-ray diffraction (XRD) technique --- p.17 / Chapter 2.6 --- X-ray photoelectron spectroscopy (XPS) --- p.21 / Chapter 2.7 --- Transmission electron microscopy (TEM) technique --- p.24 / Chapter 2.8 --- Spectroscopic ellipsometry (S.E.) --- p.25 / Chapter 2.9 --- Z-scan technique --- p.32 / Chapter Chapter 3. --- Characterization of Single Implanted Samples / Chapter 3.1 --- Experimental results and discussion / Chapter 3.1.1 --- RBS --- p.35 / Chapter 3.1.2 --- XRD --- p.38 / Chapter 3.1.3 --- XPS --- p.42 / Chapter 3.1.4 --- XTEM --- p.49 / Chapter 3.1.5 --- S.E --- p.54 / Chapter 3.1.6 --- Z-scan measurements --- p.60 / Chapter 3.2 --- Summary --- p.65 / Chapter Chapter 4. --- Characterization of Sequentially Cu-Ni Implanted Samples / Chapter 4.1 --- Experimental results and discussion / Chapter 4.1.1 --- XRD --- p.66 / Chapter 4.1.2 --- XPS --- p.68 / Chapter 4.1.3 --- XTEM --- p.77 / Chapter 4.1.4 --- Z-scan measurements --- p.87 / Chapter 4.2 --- Summary --- p.91 / Chapter Chapter 5. --- Conclusion and Future Works / Chapter 5.1 --- Conclusion --- p.92 / Chapter 5.2 --- Future works --- p.93 / Appendix / Appendix I --- p.94 / Chapter ☆ --- Sample preparation procedures for XTEM / Appendix II --- p.97 / Chapter ☆ --- Alignment procedures of S.E. / Chapter ☆ --- Implementation of the Merlin system / Appendix III --- p.101 / Chapter ☆ --- Calibration of S.E. / Reference --- p.105

Yeung Chun Fai = 厚度和眞空熱處理對單晶 La0.67Ca0.33MnO3 薄膜特性之影響 / 楊進輝. / Thesis (M.Phil.)--Chinese University of Hong Kong, 2000. / Includes bibliographical references. / Text in English; abstracts in English and Chinese. / by Yeung Chun Fai = Hou du he zhen kong re chu li dui dan jing La0.67Ca0.33MnO3 bo mo te xing zhi ying xiang / Yang Jinhui. / Acknowledgements --- p.i / Abstract --- p.ii / 論文摘要 --- p.iv / Table of contents --- p.v / List of Figures --- p.viii / List of Tables --- p.xiii / Chapter Chapter I --- Introduction / Chapter 1.1 --- Development of magnetoresistance materials --- p.1-1 / Chapter 1.1.1 --- Magnetoresistance (MR) --- p.1-1 / Chapter 1.1.2 --- Anisotropy magnetoresistance (AMR) --- p.1-1 / Chapter 1.1.3 --- Giant magnetoresistance (GMR) --- p.1-2 / Chapter 1.1.4 --- Colossal magnetoresistance (CMR) in rare-earth manganites --- p.1-3 / Chapter 1.1.5 --- Possible origin of CMR in rare-earth manganites --- p.1-4 / Chapter 1.1.5.1 --- Double exchange mechanism --- p.1-4 / Chapter 1.1.5.2 --- Jahn-teller effect --- p.1-6 / Chapter 1.1.5.3 --- Other mechanisms --- p.1-7 / Chapter 1.1.6 --- Possible origins of CMR in Thallium manganite pyrochlores (TI2Mn207) --- p.1-7 / Chapter 1.2 --- New developments in manganite materials --- p.1-8 / Chapter 1.3 --- Our approach --- p.1-8 / Chapter 1.3.1 --- Why choose La0 .67Ca0.33Mn03 material? --- p.1-8 / Chapter 1.3.2 --- The role of oxygen content in manganite materials --- p.1-9 / Chapter 1.4 --- The scope of this thesis work --- p.1-11 / References --- p.1-12 / Chapter Chapter II --- Instrumentation / Chapter 2.1 --- Thin film deposition --- p.2-1 / Chapter 2.1.1 --- Introduction --- p.2-1 / Chapter 2.1.2 --- Facing-target sputtering (FTS) --- p.2-3 / Chapter 2.1.3 --- Deposition profile calculation for sputtering with FTS --- p.2-4 / Chapter 2.1.4 --- Vacuum system --- p.2-7 / Chapter 2.2 --- Characterization --- p.2-8 / Chapter 2.2.1 --- Profilometer --- p.2-8 / Chapter 2.2.2 --- Atomic force microscopy (AFM) --- p.2-8 / Chapter 2.2.3 --- X-ray diffraction (XRD) --- p.2-8 / Chapter 2.2.4 --- Resistance and magnetoresistance measurement --- p.2-10 / Chapter 2.2.5 --- Hall effect measurement --- p.2-11 / References --- p.2-13 / Chapter Chapter III --- Epitaxial growth of La0.67Ca0.33 Mn03 thin films / Chapter 3.1 --- Introduction --- p.3-1 / Chapter 3.2 --- Fabrication and characteristics of LCMO target --- p.3-1 / Chapter 3.3 --- Substrate materials --- p.3-5 / Chapter 3.4 --- Deposition --- p.3-10 / Chapter 3.4.1 --- Sample preparation --- p.3-10 / Chapter 3.4.2 --- Substrate temperature --- p.3-10 / Chapter 3.4.3 --- Deposition process --- p.3-17 / Chapter 3.5 --- Post-annealing effect --- p.3-18 / Chapter 3.6 --- Film composition analysis --- p.3-22 / Chapter 3.7 --- Epitaxial growth examination --- p.3-22 / References --- p.3-27 / Chapter Chapter IV --- Thickness effect in single-crystal LCMO thin films grown on NGO and STO / Chapter 4.1 --- Motivation --- p.4-1 / Chapter 4.2 --- Resistance measurement --- p.4-2 / Chapter 4.3 --- Magnetoresistance (MR) --- p.4-8 / Chapter 4.4 --- Crystal structure --- p.4-12 / Chapter 4.5 --- Surface morphology --- p.4-16 / Chapter 4.6 --- Hall effect measurement --- p.4-19 / Chapter 4.6.1 --- Basic principle --- p.4-19 / Chapter 4.6.2 --- Experiment --- p.4-20 / Chapter 4.6.3 --- Carrier concentration & mobility --- p.4-20 / Chapter 4.7 --- Discussions --- p.4-25 / References --- p.4-27 / Chapter Chapter V --- Strain dependent vacuum annealing effectin single-crystal La0.67Ga0.33MnO3 thin films / Chapter 5.1 --- Motivation --- p.5-1 / Chapter 5.2 --- Sample description --- p.5-1 / Chapter 5.3 --- Vacuum annealing process --- p.5-2 / Chapter 5.4 --- Crystal structure --- p.5-2 / Chapter 5.5 --- Resistance measurement --- p.5-6 / Chapter 5.6 --- Discussions --- p.5-8 / Chapter 5.6.1 --- Lattice expansion --- p.5-8 / Chapter 5.6.2 --- Determination of oxygen content --- p.5-9 / References --- p.5-11 / Chapter Chapter VI --- Activation energy of small polaron in La0.67Ca0.33MnO3 thin films / Chapter 6.1 --- Motivation --- p.6-1 / Chapter 6.2 --- Basic theory --- p.6-1 / Chapter 6.2.1 --- Variable range hopping --- p.6-1 / Chapter 6.2.2 --- Semiconduction --- p.6-2 / Chapter 6.2.3 --- Nearest-neighbor hoping of small polarons --- p.6-2 / Chapter 6.3 --- Sample description --- p.6-3 / Chapter 6.4 --- Resistance measurement --- p.6-4 / Chapter 6.5 --- Activation energy --- p.6-4 / Chapter 6.6 --- Discussions --- p.6-5 / References --- p.6-12 / Chapter Chapter VII --- Conclusions --- p.7-1

by Chen Dihu. / "November 1999." / Thesis (Ph.D.)--Chinese University of Hong Kong, 1999. / Includes bibliographical references (p. 160-173). / Electronic reproduction. Hong Kong : Chinese University of Hong Kong, [2012] System requirements: Adobe Acrobat Reader. Available via World Wide Web. / Mode of access: World Wide Web. / Abstracts in English and Chinese.

Bibliography: leaves 210-223.

Typical power outputs of commercially available diode lasers are on the order of 5 milliwatts. This thesis discusses the growth, processing and fabrication of high power (lOO's of milliwatts) diode lasers. Devices were grown by Molecular Beam Epitaxy (MBE) and by Metal Organic Chemical Vapor Deposition (MOCVD). The MOCVD diode lasers demonstrated room temperature laser operation with peak output powers of 450 mW/facet pulsed mode. The MBE diode lasers demonstrated room temperature pulsed laser operation of 110 mW/facet. The dynamics of the quantum well structure were studied. The carrier concentration, threshold current density and coatings were modeled. It was demonstrated through transmission line analogies that, depending on the thickness of the high reflective coating, the result would be a high output power diode laser or a superluminescent device. The MBE device was coated with a high power coating resulting in a peak power of 450 mW. The MOCVD device was used to study the superluminescence resulting from specific coatings. / Graduation date: 1992

Thesis (M.S.)--Worcester Polytechnic Institute. / Keywords: Deposition rate; zirconia; TBC; texture; microstructure; EB-PVD. Includes bibliographical references (p. 78-79).

Thesis (Ph. D.)--University of Texas at Austin, 2001. / Vita. Includes bibliographical references. Available also from UMI Company.

Thesis (Ph. D.)--University of Texas at Austin, 2001. / Vita. Includes bibliographical references. Available also from UMI Company.

Thesis (Ph. D.)--University of Washington, 2001. / Vita. Includes bibliographical references (leaves 126-129).