In last decade, white light emitting diodes(LEDs) have become used widely from traditional indicator to general illumination. The increase of its power is the key improving issue. The current light efficiency of white LED about 30%. In other words ,more than 70% of the input electrical energy will be generated in the form of heat. So, how to get rid of the heat damage in high power LED is a severe problem. The finite element analysis is employed to simulate high power white LEDs temperature distribution and thermal stress distributions caused by the dissipated heat. The effects of package parameters, i.e. die attach, solder material, solder thickness, and chip substrate, on the temperature and thermal stress distributions on high power LED packages are simulated and studied in this thesis. A comparison between the 40mil single chip package and the chip on board(CoB) package has also been executed in this study. Simulated results indicate that the highest power of a single 40mil chip package is 7watt. The thermal stress distribution , i.e. the peak value of local thermal stress is over its yield strength, is occurred as the power up to 7watt. Numerical results also reveal that the appropriate fin design can improve the heat dissipation significantly in high power LED package.

Les composants dédiés et actuellement disponibles pour le marché automobileprésentent une grande diversité technologique tant au niveau puce que stratégie de packaging ouencore architecture module (mono-puce ou multi-puce) pour des performances équivalentes. Cetteétude s’est attachée à développer une méthodologie d’évaluation de la fiabilité de deux filièrestechnologiques particulières de modules de LEDs multi-puce : l’une intègre une technologie verticale(VTF pour Vertical Thin Film) tandis que la seconde est focalisée sur une structure par puce montéeretournée(TFFC pour Thin Film Flip Chip). La méthodologie s’articule autour de trois principaux axes:· La connaissance des structures et le développement de modèles électro-optiques et thermiquesmulti-puce permettant d’extraire les paramètres clés à suivre au travers d’un panel varié detechniques d’analyse physique et non-destructives incluant les aspects électriques, optiques,thermiques….· Une analyse comportementale de robustesse par paliers afin de dégager les margesopérationnelles de fonctionnement ainsi que les modes et les signatures caractéristiques dedéfaillance.· Une étude de fiabilité conduite à partir de différents régimes de contraintes accélérées pourestimer les durées de vie moyennes de ces nouveaux composants en environnement automobileet l’impact au niveau système.Les résultats mettent en évidence une durée de vie très dépendante de la filière technologique(facteur 6 entre les deux filières étudiées). Les analyses de défaillance ont permis d’identifierprécisément les comportements de ces nouvelles sources d’éclairage pour dégager des indicateursprécoces de défaillance. Enfin, des préconisations ont été extraites afin de fiabiliser les futursprojecteurs à sources LEDs de puissance pour les applications en automobile. / With rapid development of Lighting Emitting Diode (LED) market, LED performancesare now suitable for automotive high beam / low beam lighting applications. Due to the need of UltraHigh Brightness (UHB-LEDs), LEDs are packaged on high thermal conductivity materials to obtainmultichip module (4 chips in series), which deliver up to 1000 lumens at 1A. Currently, several LEDtechnologies are commercially offered for the same performances, and different packaging strategieshave been implemented in terms of chip configuration, bonding, down conversion phosphor layerand mechanical protection to optimize performances. This study addresses a dedicated methodologyfor reliability analysis, applied on two LED chip packaging technologies: On the one hand, a VerticalThin Film (VTF) technology; on the other hand a Thin Film Flip Chip (TFFC). Our methodology is basedon 3 main items: Packaging technology structure, materials analysis and electro-optical and thermal multichipmodels for both technologies to understand and extract the key parameters to monitor duringageing tests. Robustness assessment tests to define operating margins, adjust accelerated life-testingconditions, and identify failures signatures. Reliability study through a 6 000 hours High Temperature Operating Life (HTOL) acceleratedtests, to predict the Mean Time To Failure (MTTF) of these new light source technologiesregarding the automotive mission profile. Linked to failure analysis, convincing failuremechanisms are proposed.Based on these results, parametric variations are compared to failure analysis results topropose failure mechanisms. The HTOL tests reveal that both LED technologies have their specificreliability behavior and failure modes: catastrophic failure and gradual failure. Predictive lifetimeestimations (L70B50) of these multichip modules give a factor 6 between both technologies.Beyond these reliability results, the multichip architecture brings new issues for Solid StateLighting (SSL) sources in automotive, as well as partial failure or unbalanced behavior after stress.These new issues are discussed through the behavior modeling of a 10 LED modules batch for bothfailure modes. Modeling results demonstrate that the predictive lifetime of a LED multichiparchitecture is directly related with the LED technology failure mode.