Luminescent boron containing materials find numerous applications in modern technologies such as display/lighting, bio-imaging and sensing. Thus, investigations of structure-property relationships in organic luminescent compounds to understand their molecular and bulk properties are of fundamental importance. The main thrust of this thesis is the development of facile synthetic routes for boron containing novel polyads and study their structure-property correlations and to utilize this information to design functional materials with desired properties such as multiple emission, bio imaging, anion sensing and organic photo voltaic characteristics. This thesis contains seven chapters and the contents of each chapter are described below. Chapter 1 This chapter is a concise overview of the recent developments in the chemistry of boron based molecular systems such as triarylborane and BODIPYs. This chapter also highlights the basic nature of broad emissive materials. In addition, an advance in the frontier areas such as bio imaging is discussed in brief. Chapter 2 This chapter describes the structure and optical properties of a new triad (Borane-Bithiophene-BODIPY) 1. Triad 1 exhibits unprecedented tricolour emission when excited at borane centred high energy absorption band and also acts as a selective fluorescent and colorimetric sensor for fluoride ion with ratiometric response. The experimental results are supported by computational studies. Chapter 3 Two fluorescent compounds with similar absorption profiles and complementarily emissive properties can be regarded as the ideal couple for the generation of white-light. Two structurally close and complementarily fluorescent boron based molecular siblings 2 and 3 were prepared. The luminescence properties of individual triads were modulated to an extent to complement each other by controlling the intramolecular energy transfer in triads by fine-tuning the dihedral angle between fluorophores in 2 and 3. A binary mixture of 2 and 3 emitted white-light. Chapter 4 This chapter deals with a straight forward strategy for the generation of white-light emission in aqueous media. Using a blue-emissive AIE-active (aggregation-induced emission) 1, 8-naphthalimide- based sensitizer and a boron-dipyrromethene based red emitter as a dopant, water dispersible nanostructures with tunable emission features are produced. The white-light emissive (WL) nano-aggregates are stable at neutral pH and have been elegantly utilized for four-colour cell imaging (including near- infrared imaging). Chapter 5 This chapter describes the design and development of a NIR emitting triarylborane decorated styryl-BODIPY (4) via a facile synthetic route. Incorporation of TAB entities results in a significantly red shifted broad emission in 4 (compared to compound M3 which is devoid of TAB unit). The near coplanar orientation of Ar3B planes and BODIPY core results in a highly efficient (TAB to BODIPY) EET process in 4. Conjugate 4 acts as a highly selective and sensitive fluoride sensor with naked eye visual response as well as ratiometric fluorescent response. The dual emission in fluoride bound 4 possibly results from the restricted partial TAB to BODIPY energy transfer. Chapter 6 This chapter describes how the energy of transitions of the broad emissive molecular triads can be fine-tuned by judiciously changing the spacer oligothiophene length. A series of triarylborane and BODIPY conjugates (TAB-π-BODIPY) has been designed, and synthesized by a combined strategy of changing the connection mode between the two units, extending the conjugation size by introducing terthiophene, quaterthiophene, and pentathiophene units. The electrochemical and photophysical behavior of these conjugates were investigated. The experimental findings were rationalized by density functional theory calculations. Chapter 7 This chapter describes design and development of boron based novel electron acceptor BDY for the bulk-heterojunction solar cell. The electron mobility values of BDY was found to be of the order of standard PCBM. Bulk-heterojunction was fabricated using BDY as the electron acceptor layer. The power conversion efficiency of the newly developed solar cells with BDY as electron acceptor is much higher than the value obtained for standard cells with PCBM as the electron acceptor.

Poly-p-phenylenebenzazoles (PBXs) are heterocyclic aromatic rigid-rod liquid-crystalline polymers with fully conjugated backbone having excellent thermo-oxidative, as well as dimensional stabilities. PBXs are considered to be multifunctional polymers of superior mechanical tenacity, non-linear optical response, and electrical properties. The fully conjugated PBX polymers are deemed to have excellent opto-electronic properties. In the last decade, molecular light emitting diodes (LEDs) have been investigated intensively for having distinct advantages as an advanced opto-electronic technology. This dissertation leads to rigid-rod polymer thin-films and mono-layer devices fabricated from acidic solutions. Photoluminescence (PL) spectra for poly-p-phenylenebenzobisthiazole (PBT) freestanding film were measured over a temperature range of 67 K to 300 K showing distinct electron-phonon interaction. Using an Mg cathode, the mono-layer PBT LEDs displayed a diodic electric response with a threshold voltage as low as 1 V. A blue shift in the maximum emission wavelength of the electroluminescence (EL) spectra was also observed with increasing electrical injection energy. For the multi-layer LEDs based on PBT using the same electrodes, the p-type/n-type bi-layer structure showing the most enhanced EL emission, and the tri-layer heterojunction had the least threshold voltage using the same electrodes. Our results indicated that the heterojunction architecture could be applied to balance charge carriers for increasing EL intensity. Meanwhile, the investigation also revealed the advantage in using the extra PBT layer for increasing both EL emission intensity and injection efficiency by lowering its threshold voltage. Two schemes for making uniaxial freestanding films and LED devices for polarized optical absorption and emission were processed from uniaxial poly-p-phenylenebenzobisoxazole (PBO) fiber. The PL of the uniaxial PBO films demonstrated an emission intensity ratio I¡ü/I¡æas high as 5. Anisotropically processed mono-layered PBO LED showed a markedly decreased threshold voltage from 7 V of the isotropic PBO device to 5 V. The polarization effects in optical absorption, PL and EL emissions were acquired and correlated with the uniaxial orientation of the rigid-rod PBO polymer. The molecular modification investigated the opto-electronic properties of poly-2,2'-m-phenylene-5,5'-bibenzimidazole (Pbi) with PBT physical blends, and monolithic 6F-PBO-OH-co-6F-PBO-di(OC10H21) copolymers. Partially conjugated polymer Pbi and fully conjugated polymer PBT were mixed for luminescence study. Their absorption spectra showed superposition of individual absorption response indicating no inter-molecular energy transfer. However, the PL and the EL emission demonstrated a blue shift with increasing Pbi content. This was attributed to the rigid-rod configuration or the aggregation of PBT perturbed by mixing with coil-like Pbi. It was recognized that the backbone of the fully conjugated rigid-rod PBT was collinear having more charge delocalization than that of not fully conjugated coil-like Pbi. The diode threshold voltage of the physical blends varied from 4 V to 14 V with decreasing PBT content. Another molecular modification was changing the composition of 6F-PBO copolymers. Their PL emission exhibited excellent chromatic tuning range from green to blue emission. The Commission Internationale de l¡¦Eclairage (C. I. E.) coordinates of the copolymer EL emission were from (0.25, 0.53) to (0.24, 0.31) covering a wide visible range and demonstrating a white light emission. Atomic substitution of the rigid-rod polymers was utilized to examine individual atomic contribution for luminescence emission. The hydrogen bond effect for PBO-OH and PBO was evidenced in a major Stoke¡¦s shift to a longer wavelength because of protonic transfer on the excited state. Elemental electronegativities affected the delocalization of the £k electron leading to a blue shift in absorption spectra as shown in case of PBO and PBT. The PBO molecule was more collinear and co-planar, providing more charge delocalization than PBT. However the absorption edge of the PBT was about 30 nm higher than that of PBO. This suggested that the electronegativities affected the molecular delocalization. Using the solid-state physics with pseudofunction (PSF) calculation, there was good match between absorption spectra and calculated excitation energies for the rigid-rod polymer systems.

White light emitting diodes (LED) have drawn increasing attention due to their low energy consumption, high efficiency and potential to become primary lighting source by replacing conventional light sources. White light emission is usually generated either by coating yellow phosphor on a blue-LED or blending red, green and blue phosphor in an appropriate ratio. Maintaining appropriate proportions of individual components in the blend is difficult and the major demerit of such system is the overall self-absorption, which changes the solution concentration. This results in uncontrolled changes in the whiteness of the emitted light. Zinc Oxide (ZnO), a wide bandgap semiconductor with a large exciton binding energy at room temperature has been recognized as a promising material for ultraviolet LEDs and laser diodes. Tuning of structural, optical and electrical properties of ZnO thin films by different dopants (Lithium, Indium and Gallium) is dealt in this thesis. The achievement of white light emission from a semiconducting material without using phosphors offers an inexpensive fabrication technology, good luminescence, low turn-on voltage and high efficiency. The present work is organized chapter wise, which has 8 chapters including the summary and future work. Chapter 1: Gives a brief discussion on the overview of ZnO as an optoelectronic material, crystal structure of semiconductor ZnO, the effect of doping, optical properties and its possible applications in optoelectronic devices. Chapter 2: Deals with various deposition techniques used in the present study, includes pulsed laser deposition and thermal evaporation. The experimental set up details and the deposition procedures are described in detail. A brief note on the structural characterization equipments, namely X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS) and the optical characterization techniques namely Raman spectroscopy, transmission spectroscopy and photoluminescence (PL) spectroscopy is presented. The electrical properties of the films were studied by current- voltage, capacitance - voltage and Hall Effect measurements and the experimental details are discussed. Chapter 3: High quality ZnO/Si heterojunctions fabricated by growing ZnO thin films on p-type Si (100) substrate by pulsed laser deposition without using buffer layers are discussed in this chapter. The crystallinity of the heterojunction was analyzed by high resolution X-ray diffraction and atomic force microscopy. The optical quality of the film was analyzed by room temperature (RT) photoluminescence measurements. The high intense band to band emission confirmed the high quality of the ZnO thin films on Si. The electrical properties of the junction were studied by temperature dependent resistivity, current- voltage measurements and RT capacitance-voltage (C-V) analysis. ZnO thin film showed the lowest resistivity of 6.4x10-3 Ω.cm, mobility of 7 cm2/V.sec and charge carrier concentration of 1.58x1019cm-3 at RT. The charge carrier concentration and the barrier height (BH) were calculated to be 9.7x1019cm-3 and 0.6 eV respectively from the C-V plot. The BH and ideality factor, calculated by using the thermionic emission (TE) model were found to be highly temperature dependent. We observed a much lower value in Richardson constant, 5.19x10-7 A/cm2K2 than the theoretical value (32 A/cm2K2) for ZnO. This analysis revealed the existence of a Gaussian distribution (GD) with a standard deviation of σ2=0.035 V. By implementing GD to the TE, the values of BH and Richardson constant were obtained as 1.3 eV and 39.97 A/cm2K2 respectively from the modified Richardson plot. The obtained Richardson constant value is close to the theoretical value for n-ZnO. These high quality heterojunctions can be used for solar cell applications. Chapter 4: This chapter describes the structural and optical properties of Li doped ZnO thin films and the properties of ZnO/Li doped ZnO multilayered thin film structures. Thin films of ZnO, Li doped ZnO (ZLO) and multilayer of ZnO and ZLO (ZnO/ZLO) were grown on silicon and Corning glass substrates by pulsed laser deposition technique. Single phase formation and the crystalline qualities of the films were analyzed by X-ray diffraction and Li composition in the film was investigated to be 15 Wt % by X-ray photoelectron spectroscopy. Raman spectrum reveals the hexagonal wurtzite structure of ZnO, ZLO and ZnO/ZLO multilayer, confirms the single phase formation. Films grown on Corning glass show more than 80 % transmittance in the visible region and the optical band gaps were calculated to be 3.245, 3.26 and 3.22 eV for ZnO, ZLO and ZnO/ZLO respectively. An efficient blue emission was observed in all films that were grown on silicon (100) substrate by photoluminescence (PL). PL measurements at different temperatures reveal that the PL emission intensity of ZnO/ZLO multilayer was weakly dependent on temperature as compared to the single layers of ZnO and ZLO and the wavelength of emission was independent of temperature. Our results indicate that ZnO/ZLO multilayer can be used for the fabrication of blue light emitting diodes. Chapter 5: This chapter is divided in to two parts. The fabrication and characterization of In doped ZnO thin films grown on Corning glass substrate is discussed in the first section. Zinc Oxide (ZnO) and indium doped ZnO (IZO) thin films with different indium compositions were grown by pulsed laser deposition technique. The effect of indium concentration on the structural, morphological, optical and electrical properties of the film was studied. The films were oriented along the c-direction with wurtzite structure and are highly transparent with an average transmittance of more than 80 % in the visible wavelength region. The energy band gap was found to be decreasing with increasing indium concentration. High transparency makes the films useful as optical windows while the high band gap values support the idea that the film could be a good candidate for optoelectronic devices. The value of resistivity observed to be decreasing initially with doping concentration and subsequently increasing. The XPS and Raman spectrum confirm the presence of indium in indium doped ZnO thin films. The photoluminescence spectrum showed a tunable red light emission with different In concentrations. Undoped and In doped ZnO (IZO) thin films were grown on Pt coated silicon substrates (Pt/Si) to fabricate Pt/ZnO:Inx Schottky contacts (SC) is discussed in the second section. The SCs were investigated by conventional two probe current-voltage (I-V) measurement and by the I-V spectroscopy of conductive atomic force microscopy (C-AFM). X-ray diffraction technique was used to examine the thin film quality. Changes in various parameters like Schottky barrier height (SBH) and ideality factor (IF) as a function of temperature were presented. The estimated BH was found to be increasing and the IF was found to be decreasing with increase in temperature. The variation of SBH and IF with temperature has been explained by considering the lateral inhomogeneities in nanometer scale lengths at metal–semiconductor (MS) interface. The inhomogeneities of SBH in nanometer scale length were confirmed by C-AFM. The SBH and IF estimated from I-V spectroscopy of C-AFM showed large deviation from the conventional two probe I-V measurements. IZO thin films showed a decrease in SBH, lower turn on voltage and an enhancement in forward current with increase in In concentration. Chapter 6: In this chapter the properties of Ga doped ZnO thin films with different Ga concentrations along with undoped ZnO as a reference is discussed. Undoped and Ga doped ZnO thin films with different Ga concentrations were grown on Corning glass substrates by PLD. The structural, optical and electrical properties of Ga doped ZnO thin films are discussed. The XRD, XPS and Raman spectrum reveal the phase formation and successful doping of Ga on ZnO. All the films show good transmittance in the visible region and the photoluminescence of Ga doped ZnO showed a stable emission in the blue- green region. The resistivity of Ga doped ZnO thin films was found to be first decreasing and then increasing with increase in Ga concentrations. Chapter 7: The effect of co-doping to ZnO on the structural, optical and electrical properties was described in this chapter. Ga and In co-doped ZnO (GIZO) thin films together with ZnO, In doped ZnO (IZO), Ga doped ZnO (GZO), IZO/GZO multilayer for comparison, were grown on Corning glass and boron doped Si substrates by PLD. GIZO showed better structural, optical and electrical properties compared with other thin films. The Photoluminescence spectra of GIZO showed a strong white light emission and the current-voltage characteristics showed relatively lower turn on voltage and larger forward current. The CIE co-ordinates for GIZO were observed to be (0.31, 0.33) with a CCT of 6650 K, indicating a cool white light and established a possibility of white light emitting diodes. Finally the chapter 8 presents the summary derived out of the work and a few suggestions on future work.