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High-resolution XEOL spectroscopy setup at the X-ray absorption spectroscopy beamline P65 of PETRA IIILevcenko, S., Biller, R., Pfeiffelmann, T., Ritter, K., Falk, H. H., Wang, T., Siebentritt, S., Welter, E., Schnohr, C. S. 30 July 2024 (has links)
A newly designed setup to perform steady-state X-ray excited optical
luminescence (XEOL) spectroscopy and simultaneous XEOL and X-ray
absorption spectroscopy characterization at beamline P65 of PETRA III is
described. The XEOL setup is equipped with a He-flow cryostat and state-ofthe-
art optical detection system, which covers a wide wavelength range of 300–
1700 nm with a high spectral resolution of 0.4 nm. To demonstrate the setup
functioning, low-temperature XEOL studies on polycrystalline CuInSe2
thin film, single-crystalline GaN thin film and single-crystalline ZnO bulk
semiconductor samples are performed.
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High-resolution XEOL spectroscopy setup at the X-ray absorption spectroscopy beamline P65 of PETRA IIILevcenko, S., Biller, R., Pfeiffelmann, T., Ritter, K., Falk, H. H., Wang, T., Siebentritt, S., Welter, E., Schnohr, C. S. 30 July 2024 (has links)
A newly designed setup to perform steady-state X-ray excited optical
luminescence (XEOL) spectroscopy and simultaneous XEOL and X-ray
absorption spectroscopy characterization at beamline P65 of PETRA III is
described. The XEOL setup is equipped with a He-flow cryostat and state-ofthe-
art optical detection system, which covers a wide wavelength range of 300–
1700 nm with a high spectral resolution of 0.4 nm. To demonstrate the setup
functioning, low-temperature XEOL studies on polycrystalline CuInSe2
thin film, single-crystalline GaN thin film and single-crystalline ZnO bulk
semiconductor samples are performed.
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