Fang, Qianying = 基於掃描探針顯微鏡(SPM)的關於鋁摻雜氧化鋅(ZnO:Al)局域電學性質之研究 / 方倩莹. / Thesis (M.Phil.)--Chinese University of Hong Kong, 2008. / Includes bibliographical references (leaves 97-100). / Text in English; abstracts in English and Chinese. / Fang, Qianying = Ji yu sao miao tan zhen xian wei jing (SPM) de guan yu lü shan za yang hua xin (ZnO:Al) ju yu dian xue xing zhi zhi yan jiu / Fang Qianying. / Chapter I. --- Abstract / Chapter II. --- Acknowledgement / Chapter III. --- Table of contents / Chapter IV. --- List of figures / Chapter V. --- List of tables / Chapter 1 --- Introduction / Chapter 1.1 --- Motivations / Chapter 1.2 --- Outline of thesis / Chapter 2 --- Experimental Conditions and Techniques Used / Chapter 2.1 --- Sample preparation / Chapter 2.1.1 --- Radio frequency magnetic sputtering / Chapter 2.1.2 --- Substrates / Chapter 2.1.3 --- Thermal evaporation / Chapter 2.1.4 --- Thermal annealing / Chapter 2.2 --- Microscopic electrical measurement / Chapter 2.2.1 --- Conductive atomic force microscope (c-AFM) / Chapter 2.2.2 --- Scanning capacitance microscope (SCM) / Chapter 2.2.3 --- Surface Potential (SP) / Chapter 2.3 --- SEM and cathodoluminescence spectroscopy / Chapter 3 --- Calibrations / Chapter 3.1 --- Calibrations of c-AFM measurements / Chapter 3.1.1 --- Reproducible images / Chapter 3.1.2 --- Further statistical analysis / Chapter 3.1.3 --- Sample thickness effect / Chapter 3.1.4 --- Conclusions / Chapter 3.2 --- Calibrations of cathodeluminescence (CL) measurements / Chapter 3.2.1 --- Effect of removing residual magnetic field / Chapter 3.2.2 --- Effect of Faraday cup moving / Chapter 3.2.3 --- Time effect / Chapter 3.2.4 --- Effect of mirror shift / Chapter 3.2.5 --- Effect of electron beam shift / Chapter 3.2.6 --- Conclusions / Chapter 3.3 --- Calibrations of scanning capacitance microscope (SCM) measurements / Chapter 3.3.1 --- SCM images and morphological dependence of as-deposited AlOx/ZnO thin film / Chapter 3.3.2 --- Comparison between as-deposited and e-beam irradiated AlOx/ZnO thin film / Chapter 3.3.3 --- SCM images and morphological dependence of e-beam irradiated AlOx/ZnO thin film / Chapter 3.3.4 --- Conclusions / Chapter 4 --- Experimental Results and Data Analysis / Chapter 4.1 --- Conductive Atomic Force Microscope (c-AFM) / Chapter 4.1.1 --- Effect of scan rate / Chapter 4.1.2 --- Dual images and morphological dependence / Chapter 4.1.3 --- Statistic microscopic current-voltage (I-V) / Chapter 4.1.4 --- Schottky barrier at Pt-ZnO contact / Chapter 4.1.5 --- C-AFM artifact / Chapter 4.2 --- Scanning Capacitance Microscope (SCM) / Chapter 4.2.1 --- Dual images and morphological dependence / Chapter 4.2.2 --- Statistic microscopic SCM data-voltage (dC/dV-V) / Chapter 4.3 --- Surface Potential (SP) / Chapter 5 --- Discussions and Conclusion / Chapter 5.1 --- Mechanism / Chapter 5.2 --- Conclusions / Chapter 5.3 --- Future plan / Chapter 6 --- References

Orientador: José Roberto Ribeiro Bortoleto / Banca: Monica Alonso Cotta / Banca: Tersio Guilherme de Souza Cruz / O Programa de Pós Graduação em Ciência e Tecnologia de Materiais, PosMat, tem caráter institucional e integra as atividades de pesquisa em materiais de diversos campi / Resumo: Neste trabalho filmes finos de ZnO foram depositados em substratos de vidro pela técnica de RF magnetron sputtering. Como precursores foram utilizados um alvo de zinco metálico e gás oxigênio. Duas séries de filmes finos de ZnO foram obtidas. Na primeira, foram obtidos filmes de ZnO eletricamente isolantes com transmitância óptica acima de 80%. Na segunda série de deposição, os filmes finos de ZnO também apresentaram transmitância óptica na região do visível em torno de 80%. Porém, nesta série os filmes apresentaram baixos valores de resistividade elétrica, em torno de 1,6 x 10-3Ώ cm. Os resultados de morfologia superficial das duas séries, mostraram que as estruturas de grãos dos filmes finos de ZnO evoluíram em tamanho e altura com o aumento da espessura. As análises de difração de raios X realizadas para os filmes de ZnO mostraam um pico preferencial no plano (002), correspondente a estrutura wurtzita do ZnO, classificando os filmes como policristalinos / Abstract: In this work ZnO films were deposited on glass substrates by RF magnetron sputtering technique. A target of metallic zinc and oxygen gas were used as precursors. Two series of ZnO thin films were obtained. in the first ZnO films were obtained with high optical transmittance, above 80%, but the films showed a high electrical resistivity. In the second set of depositions, the ZnO thin films also showed a high optical transmittance in the visible region, around 80%. However, this samples had low resistivity values, about 1.6x10-3Ώ cm. The results of the surface morphology of the two series showed that the grain structures of ZnO thin films developed in size and heigh with increasing thickness. The analysis of X-ray diffraction for the ZnO films showed a peak in the preferred plan (002), corresponding to the ZnO wurtzite structure, classifying films as polycrystalline / Mestre

Made available in DSpace on 2014-06-11T19:30:19Z (GMT). No. of bitstreams: 0 Previous issue date: 2012-02-29Bitstream added on 2014-06-13T21:00:49Z : No. of bitstreams: 1 silva_ep_me_bauru.pdf: 1073739 bytes, checksum: 6cb2c38a70de68a1096aadef2cb3a584 (MD5) / Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES) / Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP) / Neste trabalho filmes finos de ZnO foram depositados em substratos de vidro pela técnica de RF magnetron sputtering. Como precursores foram utilizados um alvo de zinco metálico e gás oxigênio. Duas séries de filmes finos de ZnO foram obtidas. Na primeira, foram obtidos filmes de ZnO eletricamente isolantes com transmitância óptica acima de 80%. Na segunda série de deposição, os filmes finos de ZnO também apresentaram transmitância óptica na região do visível em torno de 80%. Porém, nesta série os filmes apresentaram baixos valores de resistividade elétrica, em torno de 1,6 x 10-3Ώ cm. Os resultados de morfologia superficial das duas séries, mostraram que as estruturas de grãos dos filmes finos de ZnO evoluíram em tamanho e altura com o aumento da espessura. As análises de difração de raios X realizadas para os filmes de ZnO mostraam um pico preferencial no plano (002), correspondente a estrutura wurtzita do ZnO, classificando os filmes como policristalinos / In this work ZnO films were deposited on glass substrates by RF magnetron sputtering technique. A target of metallic zinc and oxygen gas were used as precursors. Two series of ZnO thin films were obtained. in the first ZnO films were obtained with high optical transmittance, above 80%, but the films showed a high electrical resistivity. In the second set of depositions, the ZnO thin films also showed a high optical transmittance in the visible region, around 80%. However, this samples had low resistivity values, about 1.6x10-3Ώ cm. The results of the surface morphology of the two series showed that the grain structures of ZnO thin films developed in size and heigh with increasing thickness. The analysis of X-ray diffraction for the ZnO films showed a peak in the preferred plan (002), corresponding to the ZnO wurtzite structure, classifying films as polycrystalline

Many new applications are being proposed and developed for use in the terahertz (THz) frequency region. Similarly, many new materials are being characterized for possible use in this area. Nanostructured forms are of particular interest since they may yield desirable properties, but they remain especially challenging to characterize. This work focuses on the characterization of zinc oxide (ZnO) in bulk and nanowire form. A method for characterizing nanostructures at THz by use of a parallel-plate waveguide (PPWG) is presented. This method is novel in that it is simple, both in theory and practice, and does not require the use of complex measurement techniques such as differential and double modulated terahertz time-domain spectroscopy (THz-TDS). To enable easy evaluation of the quality of the result the maximum deviation in the material response measurement is presented. The dielectric properties of bulk and nanowire ZnO as determined by THz-TDS measurements are reported, and the electrical conductivity extracted from both are presented for comparison. Experimental results are compared to the well established pseudo-harmonic phonon dielectric model. Shortcomings in the pseudo-harmonic phonon model are resolved when coupled with a modified Drude model. This work will enable the determination of THz material properties from nano-scale and very-thin film materials with better reliability and practicality than what has been possible until now.

Nanotechnology is experiencing a flourishing development in a variety of fields covering all of the areas from science to engineering and to biology. As an active field in nanotechnology, the work presented in this dissertation is mostly focused on the fundamental study about the fabrication and assembly of functional oxide nanostructures. In particular, Zinc Oxide, one of the most important functional semiconducting materials, is the core objective of this research, from the controlled growth of nanoscale building blocks to understanding their properties and to how to organize these building blocks. Thermal evaporation process based on a single-zone tube furnace has been employed for synthesizing a range of 1D nanostructures. By controlling the experimental conditions, different morphologies, such as ultra-small ZnO nanobelts, mesoporous ZnO nanowires and core-shell nanowire were achieved. In order to pattern the nanostructures, a large-scale highly-ordered nanobowl structure based on the self-assembly of submicron spheres was created and utilized as patterning template. The growth and patterning techniques were thereafter integrated for aligning and patterning of ZnO nanowires. The aligning mechanisms and growth conditions were thoroughly studied so as to achieve a systematic control over the morphology, distribution and density. The related electronic and electromechanical properties of the aligned ZnO nanowires were investigated. The feasibility of some potential applications, such as photonic crystals, solar cells and sensor arrays, has also been studied. This research may set a foundation for many industrial applications from controlled synthesis to nanomanufacturing.

Ph.D. / In the search to improve the conversion efficiency of solar cells such as α-Si and CuInSe2 cells, attention have recently been focused on the use of transparent conducting oxides (TCO's) as window layers and top electrodes in these cells. Materials such as indium tin oxide (ITO) and fluorine-doped tin oxide (FTO) thin films were used due to their excellent electro-optical properties, but it was found that they were unstable when subjected to a hydrogen plasma (during the a-Si deposition) and that the materials reduced to their metallic forms, degrading their electrical and optical properties. Zinc oxide (ZnO), however, possess electrical and optical properties equal to ITO and FTO, but is stable in the presence of a hydrogen plasma. In this study a system for the deposition of ZnO thin films by spray pyrolysis was developed and the films successfully deposited. The films were also doped with A1C1 3 in an attempt to further improve the films' conductivities. The films were then characterized by means of X-ray diffraction (XRD), scanning electron microscopy (SEM), electrical measurements (Hall and four-point probe measurements) and optical analyses of the films. The films were compared with films deposited by atomic layer epitaxy (ALE) and DC sputtering. It was found that the films were crystalline with a predominantly (002) preferred orientation. The addition of Al as dopant, however, resulted in the film structure deteriorating. The SEM micrographs obtained of the films indicated films with a close-packed structure, existing of small grains and the film surface having a textured appearance. It was further found that the deposition parameters of the films influenced both the structures of the films and the morphologies and the micrographs indicated that the addition of Al as dopant resulted in the film formation being inhibited and even resulting in no proper film being deposited. It was found that the as-deposited ZnO films were resistive and that the films had to be subjected to a post-deposition annealing to decrease the film resistivity. The annealing conditions were investigated and it was found that annealing the films in hydrogen at their deposition temperature for an hour resulted in the largest decrease in the films' resistivities, typically two orders of magnitude. Studies of the substrate temperature indicated that the films had to be deposited at between 350 and 420°C and that a reduction in the substrate temperature resulted in the film resistivity increasing. Contrary to literature, it was found that the addition of Al as dopant had no beneficial influence on the electrical properties of the films and that dopant concentrations exceeding 1.0 at.% resulted in the film resistivity increasing. The films were characterized optically by analysing the transmission spectra obtained of the films, using the envelope technique. It was found that the films had transmissions exceeding 95% and that the refractive indices and optical gaps centred around 1.99 and 3.3 eV respectively. Both properties were affected by the deposition parameters. The ZnO films deposited by spray pyrolysis compared excellently with the films prepared by ALE and DC sputtering in all aspects. It is hence clear that ZnO films, with characteristics suitable for solar cell application, can be deposited by the simple and inexpensive technique of spray pyrolysis.