Wang, Ranshi = 透明电解质/氧化锌异质结热稳定性的研究 / 王然石. / Thesis (M.Phil.)--Chinese University of Hong Kong, 2007. / Includes bibliographical references (leaves 130-134). / Abstracts in English and Chinese. / Wang, Ranshi = Tou ming dian jie zhi/yang hua xin yi zhi jie re wen ding xing de yan jiu / Wang Ranshi. / Chapter I. --- Abstract / Chapter II. --- Acknowledgement / Chapter III. --- Table of contents / Chapter IV. --- List of figures / Chapter V. --- List of tables / Chapter 1 --- Introduction / Chapter 1.1 --- Motivations / Chapter 1.2 --- Outline of thesis / Chapter 2 --- Experimental Conditions and Techniques Used / Chapter 2.1 --- Sample preparation / Chapter 2.1.1 --- Radio frequency magnetic sputtering / Chapter 2.1.2 --- ITO glass / Chapter 2.1.3 --- Thermal evaporation / Chapter 2.1.4 --- Thermal annealing / Chapter 2.2 --- Optical characterization of ZnO / Chapter 2.2.1 --- Photoluminescence (PL) measurement / Chapter 2.2.2 --- SEM and cathodoluminescence spectroscopy / Chapter 2.3 --- Time-of-FIight Secondary Ion Mass Spectroscopy (TOF-SIMS ) / Chapter 2.4 --- Electrical measurements / Chapter 3 --- Calibrations / Chapter 3.1 --- Sample Thickness / Chapter 3.2 --- Calibrations of cathodeluminescence measurements / Chapter 3.2.1 --- Probe current and specimen current / Chapter 3.2.2 --- Sample uniformity in CL measurement / Chapter 3.2.3 --- Mirror position / Chapter 3.2.4 --- Non-linear relation between CL emission and current / Chapter 3.2.5 --- CL band-edge emission stability / Chapter 3.2.6 --- Effect of magnification / Chapter 3.2.7 --- Effect of electron beam shift / Chapter 3.2.8 --- Conclusions / Chapter 3.3 --- C-V measurement / Chapter 4 --- Experimental Results and Data Analysis / Chapter 4.1 --- Optical properties / Chapter 4.1.1 --- Luminescence of ZnO / Chapter 4.1.2 --- Light emitting thermal stability of A10x (MgO) capped ZnO film / Chapter 4.1.2.1 --- Emission degradations in annealing treatment by PL / Chapter 4.1.2.2 --- Evidence about the interface degradation / Chapter 4.1.2.3 --- CL studies of the emission from sample surface / Chapter 4.2 --- Secondary Ion Mass Spectroscopy (SIMS) studies of AIOx-capped ZnO / Chapter 4.2.1 --- Data processing / Chapter 4.2.2 --- Diffusion width / Chapter 4.3 --- Simulation of Zn out diffusion to the dielectric layer / Chapter 4.3.1 --- Structure and assumptions / Chapter 4.3.2 --- Calculations of diffusion by Fick's Law / Chapter 4.3.3 --- Simulation of PL reduction from diffusion / Chapter 4.3.4 --- Short-time PL / Chapter 4.4 --- Simulation of defects generation in emission reduction process / Chapter 4.4.1 --- Some calculations of continuity equation / Chapter 4.4.2 --- First order equation for defect generation / Chapter 4.5 --- Electrical measurements / Chapter 4.5.1 --- Theory of C-V measurement for MOS structure / Chapter 4.5.1.1 --- MOS Structure / Chapter 4.5.1.2 --- Discussions about surface charge and energy level in C-V experiments of MOS / Chapter 4.5.1.3 --- Useful formulations / Chapter 4.5.2 --- Experimental results of C-V and parameter extraction / Chapter 4.5.2.1 --- Effect of series resistance correction / Chapter 4.5.2.2 --- Effect of thermal annealing to C-V curves on dielectric/ZnO/ITO / Chapter 4.5.2.3 --- Doping concentration (ND) / Chapter 4.5.2.4 --- Discussion about the fixed and mobile charge / Chapter 4.5.3 --- Simulation of C-V relation in dielectric/ZnO / Chapter 4.5.4 --- Current-voltage (I-V) measurements / Chapter 4.5.5 --- Conductance-voltage measurements (G-V) and interface trap density / Chapter 4.5.6 --- DLTS measurements for extracting interface trap density / Chapter 5 --- Discussions and Conclusion / Chapter 5.1 --- Mechanism / Chapter 5.2 --- Conclusions / Chapter 5.3 --- Future plan / Chapter 6 --- References