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  • About
  • The Global ETD Search service is a free service for researchers to find electronic theses and dissertations. This service is provided by the Networked Digital Library of Theses and Dissertations.
    Our metadata is collected from universities around the world. If you manage a university/consortium/country archive and want to be added, details can be found on the NDLTD website.
1

Studies on thermal stabilities of transparent dielectrics/ZnO heterostructures. / 透明电解质/氧化锌异质结热稳定性的研究 / Studies on thermal stabilities of transparent dielectrics/ZnO heterostructures. / Tou ming dian jie zhi/yang hua xin yi zhi jie re wen ding xing de yan jiu

January 2007 (has links)
Wang, Ranshi = 透明电解质/氧化锌异质结热稳定性的研究 / 王然石. / Thesis (M.Phil.)--Chinese University of Hong Kong, 2007. / Includes bibliographical references (leaves 130-134). / Abstracts in English and Chinese. / Wang, Ranshi = Tou ming dian jie zhi/yang hua xin yi zhi jie re wen ding xing de yan jiu / Wang Ranshi. / Chapter I. --- Abstract / Chapter II. --- Acknowledgement / Chapter III. --- Table of contents / Chapter IV. --- List of figures / Chapter V. --- List of tables / Chapter 1 --- Introduction / Chapter 1.1 --- Motivations / Chapter 1.2 --- Outline of thesis / Chapter 2 --- Experimental Conditions and Techniques Used / Chapter 2.1 --- Sample preparation / Chapter 2.1.1 --- Radio frequency magnetic sputtering / Chapter 2.1.2 --- ITO glass / Chapter 2.1.3 --- Thermal evaporation / Chapter 2.1.4 --- Thermal annealing / Chapter 2.2 --- Optical characterization of ZnO / Chapter 2.2.1 --- Photoluminescence (PL) measurement / Chapter 2.2.2 --- SEM and cathodoluminescence spectroscopy / Chapter 2.3 --- Time-of-FIight Secondary Ion Mass Spectroscopy (TOF-SIMS ) / Chapter 2.4 --- Electrical measurements / Chapter 3 --- Calibrations / Chapter 3.1 --- Sample Thickness / Chapter 3.2 --- Calibrations of cathodeluminescence measurements / Chapter 3.2.1 --- Probe current and specimen current / Chapter 3.2.2 --- Sample uniformity in CL measurement / Chapter 3.2.3 --- Mirror position / Chapter 3.2.4 --- Non-linear relation between CL emission and current / Chapter 3.2.5 --- CL band-edge emission stability / Chapter 3.2.6 --- Effect of magnification / Chapter 3.2.7 --- Effect of electron beam shift / Chapter 3.2.8 --- Conclusions / Chapter 3.3 --- C-V measurement / Chapter 4 --- Experimental Results and Data Analysis / Chapter 4.1 --- Optical properties / Chapter 4.1.1 --- Luminescence of ZnO / Chapter 4.1.2 --- Light emitting thermal stability of A10x (MgO) capped ZnO film / Chapter 4.1.2.1 --- Emission degradations in annealing treatment by PL / Chapter 4.1.2.2 --- Evidence about the interface degradation / Chapter 4.1.2.3 --- CL studies of the emission from sample surface / Chapter 4.2 --- Secondary Ion Mass Spectroscopy (SIMS) studies of AIOx-capped ZnO / Chapter 4.2.1 --- Data processing / Chapter 4.2.2 --- Diffusion width / Chapter 4.3 --- Simulation of Zn out diffusion to the dielectric layer / Chapter 4.3.1 --- Structure and assumptions / Chapter 4.3.2 --- Calculations of diffusion by Fick's Law / Chapter 4.3.3 --- Simulation of PL reduction from diffusion / Chapter 4.3.4 --- Short-time PL / Chapter 4.4 --- Simulation of defects generation in emission reduction process / Chapter 4.4.1 --- Some calculations of continuity equation / Chapter 4.4.2 --- First order equation for defect generation / Chapter 4.5 --- Electrical measurements / Chapter 4.5.1 --- Theory of C-V measurement for MOS structure / Chapter 4.5.1.1 --- MOS Structure / Chapter 4.5.1.2 --- Discussions about surface charge and energy level in C-V experiments of MOS / Chapter 4.5.1.3 --- Useful formulations / Chapter 4.5.2 --- Experimental results of C-V and parameter extraction / Chapter 4.5.2.1 --- Effect of series resistance correction / Chapter 4.5.2.2 --- Effect of thermal annealing to C-V curves on dielectric/ZnO/ITO / Chapter 4.5.2.3 --- Doping concentration (ND) / Chapter 4.5.2.4 --- Discussion about the fixed and mobile charge / Chapter 4.5.3 --- Simulation of C-V relation in dielectric/ZnO / Chapter 4.5.4 --- Current-voltage (I-V) measurements / Chapter 4.5.5 --- Conductance-voltage measurements (G-V) and interface trap density / Chapter 4.5.6 --- DLTS measurements for extracting interface trap density / Chapter 5 --- Discussions and Conclusion / Chapter 5.1 --- Mechanism / Chapter 5.2 --- Conclusions / Chapter 5.3 --- Future plan / Chapter 6 --- References

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