This experiment use NaCl (001) single crystal as substrate, and the target is zinc oxide, to generate a-plane (112 ¡Â0) zinc oxide nanothim. The nanofilm is used as a buffer layer generating by Ion Beam Sputtering, and then increasing the thickness by Plasma sputtering. Part of specimens to proceed atmospheric heat treatment with different temperature and time, and part of specimens to change the ratio of the gas when the thin film is growth, then use of Transmission electron microscopy (TEM) and Photoluminescence (PL) as the analysis of film properties. The results of experiment, show that (112 ¡Â0) plane have more stringent conditions when generate of thin film, and easy to become the ring of electron diffraction with no-epitaxy .But finally we get a data what can generate a well a-plane ZnO thin film, the substrate temperature of 400 ¢X C, the sputtering time of 1 hour, Ar/O2 = 1.5. From the results of Photoluminescence, we find that there are zinc vacancies in ZnO thin film, probably there are too many oxygen atoms. While the heat treatment in nitrogen, zinc vacancies are reduced rapidly. Indicating that oxygen atoms within the film are reduced by nitrogen atoms or replace the position of the oxygen atoms.