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noneWu, I-Wei 15 August 2006 (has links)
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Ensemble Monte-carlo Simulation Of Quantum Well Infrared Photodetectors, And Inp Based Long Wavelength Quantum Well Infrared Photodetectors For Thermal ImagingCellek, Oray Orkun 01 September 2006 (has links) (PDF)
Quantum well infrared photodetectors (QWIP) utilize quantum wells of large bandgap materials to detect infrared radiation. When compared to conventional low bandgap LWIR photodetectors, the QWIP technology offers largest format thermal imagers with much better uniformity.
The theoretical part of this study includes the development of a QWIP ensemble Monte-Carlo simulator. Capture paths of electrons to quantum wells are simulated in detail. For standard AlGaAs/GaAs QWIPs, at medium and high E-fields L valley quantum well (QW) is a trap for electrons which causes higher capture probability when compared with InP/InGaAs and GaAs/InGaAs QWIPs. The results suggest that high photoconductive gain observed in InP/InGaAs and GaAs/InGaAs QWIPs is not due to good transport properties of binary barrier material but due to higher & / #61511 / -L valley energy separation.
The experimental part of the study includes the fabrication and characterization of InP/InGaAs and InP/InGaAsP QWIPs and 640x512 FPAs with the main objective of investigating the feasibility of these material systems for QWIPs. The InP/InGaAs and InP/InGaAsP QWIP detectors showed specific detectivity values above 1010 cm.Hz1/2/W (70K, f/2, background limited). The devices offer higher allowable system noise floor when compared with the standard AlGaAs/GaAs QWIP technology. It is also experimentally shown that for strategic applications LWIR InP based QWIPs have advantages over the standard QWIP technology. The InP/InGaAs 640x512 QWIP FPA reached 36 mK average NETD value at 70 K with f/1.5 optics and 10 ms integration time. The InP/InGaAsP QWIP on the other hand yielded 38 mK NETD histogram peak at 70 K with f/1.5 optics and 5 ms integration time on 320x256 window of the 640x512 FPA.
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The Study on the Measurement of Out-of-Plane Displacement of an Object Subjected to Both Temperature and Displacement Field by Using the Holographic InterferometryTsai, Ming-Lang 17 May 2001 (has links)
The main aim of this study is to extending the holographic interferometry technique to measure the out-of-plane displacement of an object subjected to both temperature and displacement field. It is noted that both the out-of-plane displacement and the ambient temperature change can cause image fringes. Therefore, an auxiliary object is used to identify the fringe numbers caused by the ambient temperature change during the experiment. The warpage measurement of a PBGA package is used as an example. It can be shown that the proposed method works
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PLANE STRAIN BUCKLING FINITE ELEMENT ANALYSIS OF BEAMSChien, Cheng-Ho 02 August 2002 (has links)
In the present study, the buckling behavior of beams is analyzed by a plane strain finite element. The displacement-type finite element formulation is based on elasticity and has no any other simplification and assumption except that the beam is of moderate depth. Also all the displacement boundary conditions can be imposed exactly. These are the advantages that beam theories of conventional approach, which simulate beams with neutral plane behaviors, do not have. Therefore the present analyses should be able to obtain buckling load and buckling mode more accurately than conventional method.
Numerical values of buckling loads of the present approach will be compared with previously published results of the Euler-Bernoulli beam theory and the Timoshenko beam theory, and further with the high order beam theory to reveal their differences. The effects of the geometry ratio, the distribution of axial loads and the displacement boundary conditions on buckling of beams are also discussed.
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The Investigation of Using LNG Cold Energy in the Cold Storage Warehouse and other Energy Conservation SystemsWu, Sheng-Chi 24 June 2003 (has links)
Taiwan is the major country of importing LNG. In this paper discussed LNG cold energy recovery used in cold storage warehouse and other energy conservation systems.
In the cold storage warehouse systems that showed the less temperature of cold storage warehouse the more exergy efficiency and the best exergy efficiency is 30%. Base on thermoeconomic analysis there was the optimal operation temperature at -70¢J.
In the purifier nitrogen system (PNS), the investigation indicated the best efficient operating temperature at -150¢J. But with economic analysis the optimal design temperature of this PNS was -130¢J.
And the last energy conservation system was the running power plane. In this research studied the power planes used LNG cold energy as inlet air-cooling systems. According to the investigation that showed the systems increased power output up to 14.4¢H in the 4.5¢J of inlet air cooling temperature. And these systems also improved the heat rate of power planes about 0.98%.
The conclusions presented that the potentialities of LNG cold energy are huge, and with proper engineering and economic analysis could make these energy conservation systems more feasible.
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Warm worked structure of commercially pure aluminium under 50% deformationDing, Shi-Xuan 05 August 2003 (has links)
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The boundary distribution charaters of Equal Channel-Angular Extrusion processed aluminiumWu, Po-Chang 13 August 2003 (has links)
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Capacitance-voltage analyses of m-plane and c-plane gallium nitride grown by MBELee, Jyun-sian 26 August 2009 (has links)
This thesis will talk about the difference between c-plane and m-plane
GaN. We use C-V measurement and try to find the difference from C-V
result.
We use atomic layer deposit (ALD) to deposit Al2O3 no n-Si (111), p-Si
(111), c-GaN, m-GaN, c-InN and m-InN for making MOS structure. And
use 100 kHz to measure high frequency C-V and charge-voltage method
to measure quasi-static capacitance and leakage current. The process and
how the instrument work will present in article.
In Si (111) case, the flat-band voltage is far away from ideal value.
This tells us charge in oxide. Result of quasi-static method shows
interface state density is between 1011 cm-2¡DeV-1 to 1012 cm-2¡DeV-1. From
Ref. 13, SiO2-Si system with 1011 cm-2 interface trap charge density for
Si (111). We compare C-V carrier concentration with Hall carrier
concentration and find some difference. We put C-V result of experiment
and simulated with COX and Hall carrier concentration we measured.
In GaN case, here is deep depletion in C-V result. And quasi-static
result also shows deep depletion of GaN. This phenomenon means
generate time of hole of n-type GaN is very long. And we use light to
excite electron and hole and measure C-V for average surface density of
state. The density of stay of Al2O3/m-GaN and Al2O3/c-GaN system is
similar. Only appearance difference between Al2O3/m-GaN and
Al2O3/c-GaN is position of flat-ban voltage. flat-ban voltage of c-GaN is
more negative than m-GaN.
For InN, we see ¡§the middle is lower than edge¡¨ curve. Recently, few
group present complete C-V curve of InN. We can not sure whether we
can use typical way to analyze this data.
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Experimental studies of the plane turbulent wall jetEriksson, Jan January 2003 (has links)
No description available.
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Erdős distance problem in the hyperbolic half-planeSenger, Steven, Iosevich, Alex, January 2009 (has links)
The entire thesis text is included in the research.pdf file; the official abstract appears in the short.pdf file; a non-technical public abstract appears in the public.pdf file. Title from PDF of title page (University of Missouri--Columbia, viewed on January 14, 2010). Thesis advisor: Dr. Alex Iosevich. Includes bibliographical references.
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