In this study, Sezawa-mode surface acoustic wave (SAW) devices were employed to construct the allergy biosensor. To fabricate Sezawa-mode SAW devices, the RF magnetron sputtering method for the growth of piezoelectric ZnO thin films onto Si3N4/Si is adopted and influences of the sputtering parameters are investigated. The properties of the ZnO thin films are investigated by X-ray diffraction and scanning electron microscopy which reveal a high c-axis-preferred orientation. A back-etched resonator is used in this study. The wet etching of (100)-oriented silicon wafers is used to form a back-side cavity which is used as the sensing area. Low-stress silicon nitride was deposited by low-pressure chemical vapor deposition (LPCVD) as the etching mask for the integrated SAW device. To investigate the sensing characteristics of SAW, gold (Au) layer was initially deposited onto the sensing area of SAW devices as the binding layer in biochemical sensor and the surface of the Au layer was treated with oxygen plasma to enhance the hydrophilic properties of the Au layer. The self assembly monolayers (SAMs) is used to decorate surface of Au layer and the sandwiched enzyme-linked immunosorbent assay is used for detecting the concentration variation of immunoglobulin E (IgE) in human serum. The frequency response is measured using an E5071C network analyzer. The resonance frequency of the Sezawa-mode SAW device is 1.49 GHz. The sensitivities of the Sezawa-mode biosensor is calculated to be 6.64 MHz cm2/ng for human IgE detection.