This thesis comprises detailed experimental and theoretical investigations of the transport properties of one-dimensional nanostructures. Most of the work is dedicated to the exploration of the fascinating effects occurring in single wall carbon nanotubes (SWCNT). These particular nanostructures gained an overwhelming interest in the past two decades due to its outstanding electronic and mechanical features. We have investigated the properties of a novel family of carbon nanostructures, named here as Y-shaped rings. The studies show that they present very interesting quantum interference effects. A high structural stability under tensile strain and elevated temperatures is observed. Within the semi-classical potential adopted, the critical strain values of structure rupture lie in the same range of their pristine SWCNT counterparts. This is directly verified by the first observations of these ring-like structures in a transmission electron microscopy. A merging process of asymmetric into symmetric rings is investigated in-situ under electron beam irradiation at high temperatures. The electronic properties of these systems are theoretically studied using Monte Carlo simulations and environment dependent tight-binding calculations. From our results, we address the possibility of double-slit like interference processes of counter-propagating electron waves in the ring-like structures. The nature of well defined, sharp peaks in the density of states are determined as the discrete eigenenergies of the central loop part. Furthermore, the formation and dispersion of standing waves inside the ring is shown to originate from the quantum-dot like confinement of each branch between the leads. The obtained dispersion relation is shown to be the same occurring in purely one-dimensional quantum dots of similar geometries. Furthermore, Fabry-Perot-like interferences are observed. We established at the IFW a bottom-up processing route to fabricate nanotube based electronic devices. The SWCNTs are grown by chemical vapor deposition and we present a detailed study of the different approaches to obtain individual nanotubes suitable for a successful integration into electronic devices. Wet-chemistry and ultra-thin films as well as ferritin were employed as catalyst particles in the growth of SWCNT samples. By adjusting the optimized process parameters, we can control the obtained yield from thick nanotube forests down to just a couple of free-standing individual SWCNTs. The nanotubes are localized, contacted by standard e-beam lithography and characterized at ambient- as well as liquid helium temperatures. We usually obtain quite transparent contacts and the devices exhibit metallic or a mixed metallic/semiconducting behavior. The well-known memory effect upon gate voltage sweeping as well as single electron tunneling in the Coulomb blockade regime are addressed.