In this study, we develop self-assembled nano-metal-dots etching mask techniques to fabricate quantum dots (QDs) nano-pillars. We explain the self-assembled nano-metal-dots formation processes by using Dewetting model. Two important experimental factors including (1) interaction force between film and vapor during annealing (£^FV),¡]2¡^interaction force between film and substrate (£^FS) are study to investigate the self-assembled processes. A 200nm thick SiO2 buffer layer is first deposited on the GaAs substrate to congregate thermal energy during the RTA process. In our group, the QDs optimum grown temperature condition is 570¢J, so we develop Au-Ge nano-dots process especially for GaAs based QDs samples. The 8nm thick Au-Ge is annealed at lower 500oC for 60sec under the pressure of 5 E6 Torr to format the nano-dots on QDs samples. The Au-Ge nano-dots have a size and density of 250 ¡Ó 50 nm and 4 E8 cm-2,respectively. We use the Au-Ge nano-dots as mask and dry etching process to fabricate the 9-layer vertical coupled QDs nano-pillars. The diameter and height of the QDs nano-pillar are 250, and 800nm, respectively. According to the QDs density, each nano-pillar contains 1600 QDs in it. The QDs nano-pillar resonance signals are observed by the low temperature cryogenic cathode-luminescence measurement. A strong nano-pillar resonance signal in 1050 nm matched to our simulation results is observed.