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The main focus of this thesis is the characterization of the charge transport in CdZnTe radiation detectors and the study of the effect of the detector illumination on charge transport. The transport properties are evaluated using Laser-induced Transient Current Technique and the Monte Carlo simulation is used for fitting the measured current waveforms. The properties of the detector prepared from semi-insulating CdZnTe single crystal with a platinum Schottky contacts were measured in the dark in the unpolarized and polarized state and under the anode and cathode continuous LED above-bandgap illumination.

The demand for wide bandgap semiconductors for radiation detector applications has significantly increased in recent years due to an ever-growing need for safeguard measures and medical imaging systems amongst other applications. The need for these devices to be portable and efficient, and to operate at room temperature is important for practical applications. For radiation detectors, the semiconductor materials are mainly required to have an optimal energy gap, high average atomic number, good electrical resistivity and charge transport properties as well as purity and homogeneity. Cadmium zinc telluride (CZT) distinctly stands out among the other choices of semiconductor materials for radiation detector applications, due to its attractive material properties and the room temperature operation possibility. A tremendous amount of research is being conducted to improve CZT technology and its implementation into more commercial systems. Applications of CZT detector technology in national security, high energy physics, nuclear spectroscopy, and medical imaging systems are of special interests. However, CZT devices still face challenges that need to be understood and overcome in order to have more efficient radiation detector systems. One such challenge lies in the understanding of the surfaces of CZT detectors and surface recombination effects on charge transport, charge collection efficiency, and detector performance. Another common issue is the degradation of CZT detectors due to the presence of defects which can act as traps for the charge carriers and cause incomplete charge collection from the detectors. Thus, a major challenge is that, the commercial CZT crystals have large concentrations of defects and impurities that need to be characterized, and their effects on the detector performance should be studied. Photoluminescence (PL) spectroscopy is a sensitive, non-contact and non-destructive method, suitable to characterize lower concentrations of point defects, such as substitutional impurities (donors, acceptors) and native defects in CZT crystals. A PL spectrum provides information regarding the defect nature of the crystal by determining the presence and the type of vacancies, interstitials, and impurities in the lattice. The main objective of this thesis is to address the presence of the defects in CZT crystals, identify their types, and study their roles in the performance of x-ray radiation detectors using PL spectroscopy. Additionally, using PL method and different excitation sources including UV excitation, this thesis studies the surface of CZT samples and investigates the PL signature of the surface oxide of the samples, in an effort to optimize the surface processing and thereby improve CZT detector performance. / Graduate

abstract: An integrated methodology combining redundant clock tree synthesis and pulse clocked latches mitigates both single event upsets (SEU) and single event transients (SET) with reduced power consumption. This methodology helps to change the hardness of the design on the fly. This approach, with minimal additional overhead circuitry, has the ability to work in three different modes of operation depending on the speed, hardness and power consumption required by design. This was designed on 90nm low-standby power (LSP) process and utilized commercial CAD tools for testing. Spatial separation of critical nodes in the physical design of this approach mitigates multi-node charge collection (MNCC) upsets. An advanced encryption system implemented with the proposed design, compared to a previous design with non-redundant clock trees and local delay generation. The proposed approach reduces energy per operation up to 18% over an improved version of the prior approach, with negligible area impact. It can save up to 2/3rd of the power consumption and reach maximum possible frequency, when used in non-redundant mode of operation. / Dissertation/Thesis / Masters Thesis Electrical Engineering 2015

abstract: The space environment comprises cosmic ray particles, heavy ions and high energy electrons and protons. Microelectronic circuits used in space applications such as satellites and space stations are prone to upsets induced by these particles. With transistor dimensions shrinking due to continued scaling, terrestrial integrated circuits are also increasingly susceptible to radiation upsets. Hence radiation hardening is a requirement for microelectronic circuits used in both space and terrestrial applications. This work begins by exploring the different radiation hardened flip-flops that have been proposed in the literature and classifies them based on the different hardening techniques. A reduced power delay element for the temporal hardening of sequential digital circuits is presented. The delay element single event transient tolerance is demonstrated by simulations using it in a radiation hardened by design master slave flip-flop (FF). Using the proposed delay element saves up to 25% total FF power at 50% activity factor. The delay element is used in the implementation of an 8-bit, 8051 designed in the TSMC 130 nm bulk CMOS. A single impinging ionizing radiation particle is increasingly likely to upset multiple circuit nodes and produce logic transients that contribute to the soft error rate in most modern scaled process technologies. The design of flip-flops is made more difficult with increasing multi-node charge collection, which requires that charge storage and other sensitive nodes be separated so that one impinging radiation particle does not affect redundant nodes simultaneously. We describe a correct-by-construction design methodology to determine a-priori which hardened FF nodes must be separated, as well as a general interleaving scheme to achieve this separation. We apply the methodology to radiation hardened flip-flops and demonstrate optimal circuit physical organization for protection against multi-node charge collection. Finally, the methodology is utilized to provide critical node separation for a new hardened flip-flop design that reduces the power and area by 31% and 35% respectively compared to a temporal FF with similar hardness. The hardness is verified and compared to other published designs via the proposed systematic simulation approach that comprehends multiple node charge collection and tests resiliency to upsets at all internal and input nodes. Comparison of the hardness, as measured by estimated upset cross-section, is made to other published designs. Additionally, the importance of specific circuit design aspects to achieving hardness is shown. / Dissertation/Thesis / Doctoral Dissertation Electrical Engineering 2015

This thesis treats about semiconducting silicon structures. It describes the characteristics of the element and creation of P and N type of semiconductor and discusses about different types of faults in the crystal lattice. It deals with the description of methods for monitoring faults in semiconductor ie. determining the properties of semiconductors via EBIC, EBIV and CC methods, which are used for analysis of semiconductor devices and materials. Determining the properties of silicon components is being done by generation of charge carriers in the sample loaded in chamber of the scanning electron microscope by high energy electrons. Bellow the sample surface is being generated an electric charge which is being collected by probes. Using this data obtained by EBIC and CC were evaluated diffusion length and lifetime of electrons.