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Study on spin-charge conversion and spin transport in two-dimensional systems / 二次元系におけるスピン電荷変換およびスピン輸送についての研究Ohshima, Ryo 26 March 2018 (has links)
京都大学 / 0048 / 新制・課程博士 / 博士(工学) / 甲第21109号 / 工博第4473号 / 新制||工||1695(附属図書館) / 京都大学大学院工学研究科電子工学専攻 / (主査)教授 白石 誠司, 教授 木本 恒暢, 教授 山田 啓文 / 学位規則第4条第1項該当 / Doctor of Philosophy (Engineering) / Kyoto University / DFAM
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Study on spin-charge conversion in Bi-based systems / Biを基軸とする材料系におけるスピン変換現象の研究Matsushima, Masayuki 23 March 2022 (has links)
京都大学 / 新制・課程博士 / 博士(工学) / 甲第23907号 / 工博第4994号 / 新制||工||1780(附属図書館) / 京都大学大学院工学研究科電子工学専攻 / (主査)教授 白石 誠司, 教授 竹内 繁樹, 准教授 浅野 卓 / 学位規則第4条第1項該当 / Doctor of Philosophy (Engineering) / Kyoto University / DFAM
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Development of CMOS active pixel sensorsGreig, Thomas Alexander January 2008 (has links)
This thesis describes an investigation into the suitability of complementary metal oxide semiconductor (CMOS) active pixel sensor (APS) devices for scientific imaging applications. CMOS APS offer a number of advantages over the established charge-coupled device (CCD) technology, primarily in the areas of low power consumption, high-speed parallel readout and random (X-Y) addressing, increased system integration and improved radiation hardness. The investigation used a range of newly designed Test Structures in conjunction with a range of custom developed test equipment to characterise device performance. Initial experimental work highlighted the significant non-linearity in the charge conversion gain (responsivity) and found the read noise to be limited by the kTC component due to resetting of the pixel capacitance. The major experimental study investigated the contribution to dark signal due to hot-carrier injection effects from the in-pixel transistors during read-out and highlighted the importance of the contribution at low signal levels. The quantum efficiency (QE) and cross-talk were also investigated and found to be limited by the pixel fill factor and shallow depletion depth of the photodiode. The work has highlighted the need to design devices to explore the effects of individual components rather than stand-alone imaging devices and indicated further developments are required for APS technology to compete with the CCD for high-end scientific imaging applications. The main areas requiring development are in achieving backside illuminated, deep depletion devices with low dark signal and low noise sampling techniques.
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