Thesis (M.S.)--Rochester Institute of Technology, 1989. / Includes bibliographical references.

Image sensors play a vital role in many image sensing and capture applications. Among the various types of image sensors, complementary metal oxide semiconductor (CMOS) based active pixel sensors (APS), which are characterized by reduced pixel size, give fast readouts and reduced noise. APS are used in many applications such as mobile cameras, digital cameras, Webcams, and many consumer, commercial and scientific applications. With these developments and applications, CMOS APS designs are challenging the old and mature technology of charged couple device (CCD) sensors. With the continuous improvements of APS architecture, pixel designs, along with the development of nanometer CMOS fabrications technologies, APS are optimized for optical sensing. In addition, APS offers very low-power and low-voltage operations and is suitable for monolithic integration, thus allowing manufacturers to integrate more functionality on the array and building low-cost camera-on-a-chip. In this thesis, I explore the current state-of-the-art of CMOS APS by examining various types of APS. I show design and simulation results of one of the most commonly used APS in consumer applications, i.e. photodiode based APS. We also present an approach for technology scaling of the devices in photodiode APS to present CMOS technologies. Finally, I present the most modern CMOS APS technologies by reviewing different design models. The design of the photodiode APS is implemented using commercial CAD tools.