A thin film deposition system using ultrasonic atomization is designed and constructed. The coatings have been produced by pyrolysis using a solution of indium chloride in deionized water. Solution containing precursors is transported by carrying gas to the heated substrate where deposition is accomplished. In this study sample series obtained with of varying process parameters such as the flow rate of carrying gas, the tin concentration, and substrate temperature. The electrical properties of indium oxide thin film was improved using SnCl4¡E5H2O as a dopant. The effects of doping in crystalline, surface morphology, optical transmittance and electrical conductivity of the deposition thin films were examined and the best optimal percentage of doping for the transmittance and electrical properties were found. Weak diffraction peaks of crystalline indium oxide were observed in XRD pattern of the thin films deposition at 250¢J. The grains size of crystalline thin films grows with increasing substrate temperature. There is no change in XRD spectra between undoped and tin-doped indium oxide obtained with the same deposition temperature. The resistivity of thin films decreased greatly when dopant atom was added. The electrical resistivity of undoped indium oxide is ~10-2£[-cm, while that of ITO films reaches a minimum of 9.54¡Ñ10-4£[-cm when doping is in the range 2~ 6%.The UV-Visible spectra indicate that the optical transmittance of all films is between 75~88%. The transmittance was not strongly affected by doping concentration.