Fabrication of surfaces with versatile functional groups is an important research area. Hence, it is essential to control and tune the surface properties in a reliable manner. Vinyl-terminated self-assembled monolayers (SAMs) offer significant flexibility for further chemical modification and can serve as a versatile starting point for tailoring of surface properties. Here a synthetic route for the preparation of vinyl-terminated trichlorosilane self-assembling molecules: 9-decenyltrichlorosilane (CH₂=CH-(CH₂)₈-SiCl₃), 10-undecenyltrichlorosilane (CH₂=CH-(CH₂)₉-SiCl₃), and 14-pentadecenyltrichlorosilane (CH₂=CH-(CH₂)₁₃-SiCl₃) is presented. These molecules were used for the preparation of SAMs in either liquid or vapour phase processes. Commercially available methyl-terminated self-assembling molecules: decyltrichlorosilane (CH₃-(CH₂)₉-SiCl₃) and octadecanetrichlorosilane (CH₃-(CH₂)₁₇-SiCl₃) were used as controls. The resultant films were characterised by X-ray photoelectron spectroscopy (XPS), contact angle analysis, ellipsometry, and atomic force microscopy (AFM). Well defined, vinyl-terminated SAMs were further chemically modified with carbenes (:CCl₂, :CBr₂, :CF₂) and hexafluoroacetone azine (HFAA). The reactions were performed in the liquid or the vapour phase. The resulting SAMs were characterised using the same methods as for the vinyl-terminated monolayers. Successful modification was confirmed by the appearance of new signals in the XPS spectrum, with simultaneous changes in water contact angle values and unchanged thickness values. Methyl-terminated SAMs were also exposed to carbenes and HFAA as a control system. These are the first examples of C-C bond formation on SAMs in the vapour phase.

Le carbure de silicium est un matériau souvent employé comme matrice dans les composites thermostructuraux. Le précurseur classiquement utilisé pour son élaboration par dépôt/infiltration par voie gazeuse est CH3SiCl3. La thèse vise à évaluer le remplacement de ce précurseur par des précurseurs gazeux bi-sourcés de SiC où carbone et silicium sont apportés séparément.A partir du système SiHCl3/C3H8/H2, l’influence du débit total, de la température, de la pression totale et de (C/Si)gaz sont évaluées et comparées aux résultats obtenus avec le système CH3SiCl3/H2. La mesure in situ de la vitesse de dépôt permet de définir des lois cinétiques apparentes. L’analyse IRTF de la phase gazeuse indique que les évolutions des pressions partielles des différents produits stables sont corrélées avec les transitions cinétiques et les changements de composition du solide. Les simulations numériques de l’évolution de la phase gazeuse montrent une bonne corrélation avec les résultats expérimentaux et permettent de proposer des mécanismes homogènes et hétérogènes qui pourraient expliquer les écarts à la stoechiométrie du dépôt.L’étude de six précurseurs supplémentaires permet de mieux identifier le rôle des principales espèces en phase homogène et hétérogène, et notamment les précurseurs effectifs de dépôt. Enfin, l’étude de l’infiltration de matériaux poreux modèles révèle des améliorations significatives en termes d’homogénéité de vitesse de dépôt.Ainsi, des conditions propices à l’infiltration de carbure de silicium peuvent être obtenues en adaptant la réactivité de la phase gazeuse par la sélection de précurseurs initiaux et des chemins réactionnels qui en découlent. / Silicon carbide (SiC) is material of choice for the matrix of Ceramic Matrix Composites (CMC).CH3SiCl3/H2 mixtures are currently used as gas precursor for the synthesis of the CVI-SiC matrices.The present work considers the dual-source approach with two separate carbon and silicon precursorsmolecules.In the case of SiHCl3/C3H8/H2 mixture, systematic studies of total flow rate, temperature, total pressureand C/Si ratio of initial gaseous phase are realized. Kinetics obtained with growth rate measurements and solid composition are compared with results from CH3SiCl3/H2 mixture. On the basis of the apparent reaction orders and activation energies, experimental kinetic laws are derived. Through IRTF analysis of the gas phase, the partial pressures of the different stable products are correlated with deposition kinetic and solid composition. Results obtained in gas-phase kinetic simulation show a good correlation with the experimental results and a mechanism of homogeneous decomposition is proposed. A better understanding of the role of the principal species in homogenous and heterogeneous phase is obtained through the study of six other gas systems and the roles of some effective precursors are discussed. Finally, infiltration results of porous material models with different precursor systems reveal significant improvements as homogeneity of kinetic deposit.Hence, favourable conditions to silicon carbide infiltration can be obtained by adapting the reactivity of the gas phase, with the choice of initial precursors and homogeneous chemistry associated. Asystematic study of the process evidences promising working windows for the infiltration of pure SiCin porous performs.