<p> On-chip Interconnection Networks are shifting from multicore to manycore systems and are tending to be heterogeneous with the integrated modules from different vendors of various sizes and shapes. Each module has different properties such as routers, link-width. From a system designer's perspective, making layouts of metal-wired links among interconnection modules for communication will be impractical as it increases the design cost in terms of the communication complexity and power leakage on these links. We can replace all links with wireless or optical links for high-performance, reducing latency. However, it comes with a high-cost. Therefore, we formulate the optimization model to minimize the cost (communication links between subnets) and maximize their data flows in the network-on-chip. </p><p> Since the optimization model using the optimizers such as CPLEX and Gurobi to achieve the best possible solutions, the solution time to a large set of given problems is not acceptable. Hence, we present a mincostflow-based heuristic algorithm (LINCA) that minimizes the quantification of hybrid routers corresponding to the application-specific traffic for manycore systems. LINCA guarantees the performance of hybrid networks on chip. Its results are validated against the manycore system architecture. Our evaluation shows that LINCA can significantly reduce the cost of using hybrid routers (communication links) in the manycore systems. It reduces cost by 84 percent on average across a variety of applications, compared with all of hybrid routers being deployed in the network without using the optimization model. However, we observed that the solution time of LINCA is increased exponentially for large scale networks. We then proposed an efficient predictive framework for optimized reconfiguring on-chip interconnection network. </p><p> The predictive model is built based on the optimization model and learning-based algorithms. As we wish to reduce the communication complexity of the interconnection links in the entire on-chip network, our objective is to minimize those links corresponding to the application-specific traffic demands. Thereby, the overall power dissipation can be mitigated. We believe that our approach will be an essential step when scaling out.</p><p>

Elongated nanostructures have attracted a great deal of interest due to unique optical, electrical and physical properties. In particular, silver nanowires and nanobeams have proven to be top contenders for a variety of applications. Due to their nano-sized dimensions, however, electrical access to individual nanowires is difficult and expensive. Here, a simple and economical procedure was designed to electrically contact small elongated structures using common facilities available at most universities. A common lithographic procedure is used to pattern gold pads and electrodes on top of nanowires already dispersed on a substrate. This process is tested by first characterizing, using a 4-point-probe measurement, a novel nanobeam created by fusing silver nanodisks. The resistivity of the nanobeams was found to be as low as 2.7x10^−8 Ω·m, which is only slightly above that of bulk silver. These measurements corroborate modeling done by another group that the nanodisks align to create a nearly continuous crystal rather than disjointed grains. In the second application, Joule-heating was used to actualize a reliable weld between silver nanowires synthesized using the polyol method. The nanowires were situated in series between two metal pads, and a procedure was designed to use electrical current to break down intermediate layers without destroying the nanowires themselves. In the last enterprise, individual silver nanowires were isolated between two gold pads and then using the same electrical recipe used for welding nanowires, the contact resistance was reduced to a negligible portion of its original value. It was found that due to the reduction in contact resistance, the 2-point-probe resistivity of the nanowire was similar to those conducted using 4 probes. The invented procedure can thus allow accurate resistivity measurements of individual metal nanowires to be done with only 2 contacts rather than 4, thereby simplifying contact fabrication and allowing appropriate contacts to be deposited on nanowires as short as 4 μm using standard photolithography.

Elongated nanostructures have attracted a great deal of interest due to unique optical, electrical and physical properties. In particular, silver nanowires and nanobeams have proven to be top contenders for a variety of applications. Due to their nano-sized dimensions, however, electrical access to individual nanowires is difficult and expensive. Here, a simple and economical procedure was designed to electrically contact small elongated structures using common facilities available at most universities. A common lithographic procedure is used to pattern gold pads and electrodes on top of nanowires already dispersed on a substrate. This process is tested by first characterizing, using a 4-point-probe measurement, a novel nanobeam created by fusing silver nanodisks. The resistivity of the nanobeams was found to be as low as 2.7x10^−8 Ω·m, which is only slightly above that of bulk silver. These measurements corroborate modeling done by another group that the nanodisks align to create a nearly continuous crystal rather than disjointed grains. In the second application, Joule-heating was used to actualize a reliable weld between silver nanowires synthesized using the polyol method. The nanowires were situated in series between two metal pads, and a procedure was designed to use electrical current to break down intermediate layers without destroying the nanowires themselves. In the last enterprise, individual silver nanowires were isolated between two gold pads and then using the same electrical recipe used for welding nanowires, the contact resistance was reduced to a negligible portion of its original value. It was found that due to the reduction in contact resistance, the 2-point-probe resistivity of the nanowire was similar to those conducted using 4 probes. The invented procedure can thus allow accurate resistivity measurements of individual metal nanowires to be done with only 2 contacts rather than 4, thereby simplifying contact fabrication and allowing appropriate contacts to be deposited on nanowires as short as 4 μm using standard photolithography.

Organic semiconductors are very attractive for thin film Organic Photodetectors (OPDs) since they possess a number of desirable attributes for optical sensing including high absorption coefficients over visible and ultraviolet wavelengths and compatibility with large-area deposition processes such as ink-jet, screen printing, and solution processing. OPDs, in general, utilize a vertical device architecture where the photoactive organic semiconductor layers are sandwiched between top and bottom electrodes that provide electrical contact. More recently, an interest in utilizing a lateral device architecture instead of the vertical one, has emerged. In this architecture, the two contacts are positioned on the two sides of the photoactive material with respect to the direction of the incoming signal, separated by a small gap. However, the factors governing lateral OPDs’ photo-response are still not well understood. In this thesis, we fabricate top-contact lateral OPDs using a thermal evaporation only fabrication process. We study the factors governing both the dark and photo currents of lateral OPDs. The effect of the wide gap between the two electrodes on the current-voltage characteristics is discussed and the role of space charge limited conduction is investigated. The contributions in the photoresponse of light scattering through the active layers as well as the back reflection of light at the metallic contacts are emphasized. The reproducibility over repeated operation cycles of both dark and photo currents values is explored. Exposure to light of the lateral OPD is found to lead to a significant increase in the dark current. The role of the conductivity enhancement in the channel due to light-induced trap filling is investigated. External quantum efficiency and detectivity estimates are given for deep ultraviolet lateral (DUV) OPDs. A comparison with vertical DUV OPDs performances is provided. Finally, the use of a phosphorescent sensitizer doped in the absorbing bottom layer to improve top-contact lateral OPDs efficiency is discussed.

Organic semiconductors are very attractive for thin film Organic Photodetectors (OPDs) since they possess a number of desirable attributes for optical sensing including high absorption coefficients over visible and ultraviolet wavelengths and compatibility with large-area deposition processes such as ink-jet, screen printing, and solution processing. OPDs, in general, utilize a vertical device architecture where the photoactive organic semiconductor layers are sandwiched between top and bottom electrodes that provide electrical contact. More recently, an interest in utilizing a lateral device architecture instead of the vertical one, has emerged. In this architecture, the two contacts are positioned on the two sides of the photoactive material with respect to the direction of the incoming signal, separated by a small gap. However, the factors governing lateral OPDs’ photo-response are still not well understood. In this thesis, we fabricate top-contact lateral OPDs using a thermal evaporation only fabrication process. We study the factors governing both the dark and photo currents of lateral OPDs. The effect of the wide gap between the two electrodes on the current-voltage characteristics is discussed and the role of space charge limited conduction is investigated. The contributions in the photoresponse of light scattering through the active layers as well as the back reflection of light at the metallic contacts are emphasized. The reproducibility over repeated operation cycles of both dark and photo currents values is explored. Exposure to light of the lateral OPD is found to lead to a significant increase in the dark current. The role of the conductivity enhancement in the channel due to light-induced trap filling is investigated. External quantum efficiency and detectivity estimates are given for deep ultraviolet lateral (DUV) OPDs. A comparison with vertical DUV OPDs performances is provided. Finally, the use of a phosphorescent sensitizer doped in the absorbing bottom layer to improve top-contact lateral OPDs efficiency is discussed.