The purpose of this thesis is a study of sensing properties of pure, platinum-doped and gold-doped tungsten oxide thin films. Required films were prepared by magnetron sputtering on glass and passivated silicon. Their chemical composition was investigated by XPS. The morphology of the films was measured using AFM and SEM. Sensing response of these films to hydrogen was investigated in the range from 1,000 to 10,000 ppm and temperatures between 100 and 350 řC. It was found that platinum oxides PtO2 and PtO were partially reduced during the sensing tests. The possible encapsulation of the platinum by the tungsten oxide was discovered. The sensitivity of the metal doped films was much higher than the sensitivity of the pure films. In the case of platinum-doped films the sensitivity decreased with increasing temperature in contrast to the gold-doped films where the sensitivity increased. The gold was present in two metallic and oxidized states. The gold was reduced during the reactions with hydrogen. After the sensing tests, the size of crystalline grains increased and the platinum-doped films became coarser.

Planar two-dimensional (2-D) nanostructured indium oxide (InOx) and one-dimensional (1-D) tin oxide (SnO2) semiconductor metal-oxide layers have been utilised for gas sensing applications. Novel layered Surface Acoustic Wave (SAW) based sensors were developed consisting of InOx/SiOxNy/36°YXLiTaO3, InOx/SiNx/SiO2/36°YXLiTaO3 and InOx/SiNx/36°YXLiTaO3 The 1 µm intermediate layers of silicon oxynitride (SiOxNy), silicon nitride (SiNx) and SiO2/SiNx matrix were deposited on lithium tantalate (36°YXLiTaO3) substrates by r.f. magnetron sputtering, electron-beam evaporation and plasma enhanced chemical vapour deposition (PECVD) techniques, respectively. As a gas sensitive layer, a 100 nm thin layer of InOx was deposited on the intermediate layers by r.f. magnetron sputtering. The targeted gases were ozone (O3) and hydrogen (H2). An intermediate layer has multiple functions: protective role for the interdigital transducers' electrodes as well as an isolating effect from InOx sensing layer, thereby improving the sensor performance. The developed SAW sensors' exhibited high response magnitudes with repeatable, reversible and stable responses towards O3 and H2. They are capable of sensing concentrations as low as 20 parts-per-billion for O3 and 600 parts-per-million for H2. Additionally a conductometric type novel sensing structure of SnO2/36°YX LiTaO3 was also developed by depositing a thin layer of SnO2 nanorods by PECVD. The gas sensing performance exhibited repeatable, reversible, stable responses towards NO2 and CO. The surface morphology, crystalline structure and preferred orientation of the deposited layers were investigated by Scanning Electron Microscopy (SEM) and X-ray Diffraction (XRD). A polycrystalline, oxygen deficient non-stoichiometric InOx with grain sizes of 20-40 nm was revealed. The 1-D nanostructures were characterised by Transmission Electron Microscopy (TEM) showing nanorods with needle-like shape , diameters of 10-20 nm a t the top and 30-40 nm at the base as well as a preferential growth orientation of [ ] on the LiTaO3 substrate. The developed sensors are promising for O3, H2 and CO sensing.