NDLTD Global ETD Search
  • Refine Query
  • Source
  • Publication year
  • to
  • Language
  • 571
  • 328
  • 112
  • 105
  • 78
  • 20
  • 20
  • 16
  • 14
  • 6
  • 6
  • 5
  • 5
  • 5
  • 5
  • Tagged with
  • 1647
  • 207
  • 150
  • 133
  • 131
  • 124
  • 123
  • 104
  • 97
  • 92
  • 87
  • 86
  • 84
  • 81
  • 78
  • About
  • The Global ETD Search service is a free service for researchers to find electronic theses and dissertations. This service is provided by the Networked Digital Library of Theses and Dissertations.
    Our metadata is collected from universities around the world. If you manage a university/consortium/country archive and want to be added, details can be found on the NDLTD website.

Search results

Showing 1 to 10 of 1647 (0.024 seconds)
1

Fundamental understanding, characterization, passivation and gettering of electrically active defects in silicon

Doolittle, William Alan 05 1900 (has links)
No description available.
Silicon defects
Semiconductors Defects
2

Strain and lattice rotation fields of deformed polycrystals

Bergugnat, Jean-Baptiste 12 1900 (has links)
No description available.
Polycrystals Defects
Crystals Defects
3

LATTICE DEFECT STUDIES OF HIGH QUALITY SINGLE CRYSTAL PLATINUM AND PALLADIUM.

KHELLAF, ABDALLAH. January 1987 (has links)
An improved quenching technique is described. This technique allows samples to be quenched at slow quenching rates without introducing unwanted dislocations during quench. High quality platinum single crystals 1 mm in diameter have been quenched from temperatures between 900°C and 1550°C using this technique. The data have been analysed and discussed using a sink model for vacancy loss proposed by Emrick. The formation energy was found to be (1.30 ± 0.03) eV. The entropy of formation and the concentration of vacancies at the melting point have been determined to be respectively (0.42 ± 0.11)k and (9.4 ± 0.7)10⁻⁴. High purity palladium single crystals have also been quenched using the same technique. Due to the need for a temperature scale, measurements of the electrical resistance of an ultra pure palladium single crystal have been made to a temperature within 100°C of the melting point. These, along with measurements of the liquid palladium resistivity, are reported. The results are discussed and compared to previously reported values.
Crystals -- Defects.
4

Local mode spectra and I-R absorption of SiGec

Scarle, Simon January 2001 (has links)
No description available.
669
Defects
5

Defect Complexes in Silicon: Electronic Structures and Positron

Hakala, Mikko 00 December 1900 (has links) (PDF)
No description available.
point defects
6

THE PRESSURE EFFECT ON DEFECT MIGRATION IN ALUMINUM

Buescher, Brent Joseph, 1940- January 1969 (has links)
No description available.
Aluminum -- Defects.
7

LATTICE PARAMETER CHANGES DURING THE ANNEALING OF QUENCHED ALUMINUM

Eubig, Casimir, 1940- January 1971 (has links)
No description available.
Aluminum -- Defects.
8

Ab-initio calculations of dislocation related properties in semiconductors

Sitch, Paul Kirst January 1994 (has links)
No description available.
530.41
Defects
9

Defect characterization in cast steel ball mill ring gears

Kendrick, Allen E. January 1987 (has links)
No description available.
Gearing -- Defects.
10

The RH blood factor as a possible cause of delayed speech

Dunham, Annabel. January 1946 (has links)
Thesis (M.A.)--University of Wisconsin--Madison, 1946. / Typescript. eContent provider-neutral record in process. Description based on print version record. Includes bibliographical references (leaves i-vii).
Speech defects.

Page generated in 0.0292 seconds