Thesis (Ph. D.)--Auburn University. / Abstract. Vita. Includes bibliographical references (p. 103-114).

Thesis (Ph. D.)--Carleton University, 1996. / Includes bibliographical references. Also available in electronic format on the Internet.

In this work, the theory of internal photoemission is reviewed and extended for the special case of platinum silicide Schottky barrier infrared photodiodes. Vickers' model of hot-electron-mode photodetection is recast in terms of hot-holes, and the effects of carrier energy loss due to phonon collisions, as well as the depletion of the occupation of the emitting states due to emission are included. The optical absorption of the Schottky diodes is measured and used to relate the quantum efficiency of the diodes to the internal yield as calculated from the model. By including the effects of the carrier energy loss due to phonon collisions and the depletion of the occupation of the emitting states in the model, one can resolve previously unexplained anomalies in the photoresponse data (the shape of the Fowler plots, the absolute magnitude of the yield, and the difference between the optical and thermal barriers). Independent estimates are obtained for the mean-free-path between hot-hole/phonon, hot-hole/cold-electron, and hot-hole/imperfection collisions as well as the mean phonon energy, mean transmission coefficient across the Schottky barrier, and the Fermi energy. The model is found to be in excellent agreement with the experimental data for parameter values consistent with those reported in the literature. Some degree of correlation is found to exist between the one free variable for each diode and the processing used for that diode. Namely, the temperature of the substrate during deposition is correlated with the value of the mean-free-path between imperfection scattering events.

No description available.

No description available.

A relatively simple, yet complete analytical model for predicting the performance of illuminated or unilluminated (dark) pn diodes with arbitrary doping profiles is developed and presented in this dissertation. It can be used to calculate the saturation current, minority carrier density, short circuit current, spectral response, and effective low-high (p-p⁺) junction recombination velocities of such diodes. The model is applied to dark or illuminated n⁺-p-p⁺ diodes as a function of the front and back surface recombination velocities and the bulk doping profiles. The analysis includes heavy doping effects. The results predicted by this model are compared with those predicted by numerical simulation programs. Both results agree well with each other and with the experimental data available. The complete analytical expressions produced by the model can be reduced to simpler forms for the transparent and quasi-transparent cases. These forms agree with the special case expressions developed by others. The new model is a substantial contribution leading to improved understanding of such devices.

No description available.

No description available.

Astronomers need single photon detectors to detect very faint light sources from deep space. An avalanche photodiode in the geiger mode is especially suited for the detection of single photons. Three by three arrays of avalanche photodiodes were fabricated. Breakdown voltages of 200V were measured. Large reverse currents prevented operating the array in the geiger mode. An improved design which minimizes the reverse current is needed. A commercial avalanche photodiode especially made for the geiger mode was tested and compared to a general purpose avalanche photodiode. Using the general purpose avalanche in the geiger mode was found to be unacceptable because when exposed to a weak light source, 90% of the output pulses were dark current pulses. A computer interface circuit was designed to read the time and location where photons were absorbed by the array. The circuit performed its function qualitatively, but it had a false triggering problem.

No description available.