Thesis (Ph. D.)--Ohio State University, 2005. / Title from first page of PDF file. Includes bibliographical references (p. 227-233).

Thesis (M.S.)--Rochester Institute of Technology, 2006. / Typescript. Includes bibliographical references (leaves 70-72).

The electrically active defects introduced in GaAs by electron beam deposition (EB) of Ta were characterised. The effect of electron beam deposition on the electrical properties of GaAs was evaluated by current-voltage (I-V), capacitance¬voltage (C- V) and deep level transient spectroscopy (DL TS). However, when electronic devices are formed by EB, defects may be introduced into the semiconductor material, depending on the properties of the metal being deposited. Depending on the application, these defects may have either advantages or detrimental effects on the performance of such a device. I-V measurements indicated that the EB induced damage results in an increase in ideality factor and decrease in the barrier height with increasing the applied substrate bias, while C- V measurements showed that EB deposition also caused a decrease in the barrier height. DL TS studies on the same material in the temperature range of 20 - 350 K showed that at least three electrically active defects are introduced during EB deposition, with energies (0.102 ± 0.004, 0.322 ± 0.014 and 0.637 ± 0.029 eV) within the band gap. DL TS data was used to construct concentration profiles of these defects as a function of depth below the surface. It was found that the defect concentration increases with increasing substrate bias during the deposition, irrespective of the direction of the applied bias. This may be related to the I-V characteristics of the SBDs. The SBDs investigated by IV measurements showed that GaAs yields SBDs with poorer characteristic. The influence of EB deposition on the device properties of SBDs fabricated on GaAs is presented. These device properties were monitored using a variable temperature I-V and C- V apparatus. In order to have an understanding of the change in electrical properties of these contacts after EB deposition, it is necessary to characterise the EB induced defects. DL TS was used to characterise the defects in terms of their D L TS signature and defect concentration. / Dissertation (MSc (Physics))--University of Pretoria, 2006. / Physics / unrestricted

published_or_final_version / Physics / Doctoral / Doctor of Philosophy

Thesis (Ph.D.)--University of Western Australia, 2006.

Thesis (Ph. D.)--University of Hong Kong, 1994. / Includes bibliographical references.

Thesis (Ph. D.)--University of Missouri-Columbia, 1996. / Typescript. Vita. Includes bibliographical references (leaves 138-143). Also available on the Internet.

Thesis (Ph. D.)--University of Missouri-Columbia, 1996. / Typescript. Vita. Includes bibliographical references (leaves 138-143). Also available on the Internet.

Les travaux présentés dans cette thèse sont divisés en deux parties. La première partie est consacrée au développement d'un code de calcul électromagnétique basé sur la méthode TLM (Transmission Line Matrix) pour la modélisation des géométries très hétérogènes, nécessitant la prise en compte de maillages non-conformes localement raffinés. Cet aspect multi-échelle consiste à résoudre un problème de couplage spatio-temporel. Le couplage spatial est mis en œuvre en utilisant la technique des transformateurs introduite par Wlodarczyk. Notre effort s'est porté plus particulièrement sur le couplage temporel afin de pouvoir utiliser le pas temporel maximum dans chaque sous-maillage. Des techniques d'interpolation temporelle de type Taylor de second ordre et cubique Spline ainsi qu'une méthode de prédiction temporelle inspirée de la méthode de Prony-Pisarenko pour l'analyse spectrale ont été mises en œuvre et évaluées. La deuxième partie est consacrée à la conception de rectennas. Ces structures non linéaires, à la géométrie complexe et hétérogène, intégrant des diodes Schottky, sont les éléments clés des systèmes de transmission ou de récupération d'énergie sans fil. Leur simulation globale (circuit-électromagnétique) dans le domaine temporel par la TLM constitue un avantage par rapport aux logiciels commerciaux qui nécessitent des ajustements de certains paramètres SPICE par des réalisations et caractérisations expérimentales à priori, compliquant ainsi le processus de conception. Cela a permis de prédire avec précision le rendement de conversion d'une rectenna globale et de développer puis caractériser expérimentalement deux rectennas compactes fonctionnant à 2.45GHz.

Thesis (Ph. D.)--Ohio State University, 2006. / Title from first page of PDF file. Includes bibliographical references (p. 191-206).