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Building on the hot-injection architecture : giving worth to alternative nanocrystal syntheses /Archer, Paul I., January 2007 (has links)
Thesis (Ph. D.)--University of Washington, 2007. / Vita. Includes bibliographical references (leaves 162-172).
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Deep level defects study of arsenic implanted ZnO single crystalZhu, Congyong. January 2008 (has links)
Thesis (M. Phil.)--University of Hong Kong, 2008. / Includes bibliographical references (leaf 68-75) Also available in print.
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Growth and characterization of phosphorus doped diamond films : effects of doping, electrical characterization of interfaces and some device applications /Roychoudhury, Rajat, January 1997 (has links)
Thesis (Ph. D.)--University of Missouri-Columbia, 1997. / Typescript. Vita. Includes bibliographical references (leaves 117-122). Also available on the Internet.
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Growth and characterization of phosphorus doped diamond films effects of doping, electrical characterization of interfaces and some device applications /Roychoudhury, Rajat, January 1997 (has links)
Thesis (Ph. D.)--University of Missouri-Columbia, 1997. / Typescript. Vita. Includes bibliographical references (leaves 117-122). Also available on the Internet.
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Correspondência entre ondas de spin de um ferromagneto em uma rede favo de mel e a banda de energia do grafeno / Correspondence between spin waves of a ferromagnet in a honeycomb network and the energy band of grapheneCunha, Anderson Magno Chaves January 2014 (has links)
CUNHA, Anderson Magno Chaves. Correspondência entre ondas de spin de um ferromagneto em uma rede favo de mel e a banda de energia do grafeno. 2014. 88 f. Tese (Doutorado em Física) - Programa de Pós-Graduação em Física, Departamento de Física, Centro de Ciências, Universidade Federal do Ceará, Fortaleza, 2014. / Submitted by Edvander Pires (edvanderpires@gmail.com) on 2014-08-29T18:55:19Z
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Previous issue date: 2014 / Spin waves are collective excitations that occur in magnetic materials. These excitations are caused by disturbances in the magnetic system. For example, a small change in temperature causes the precession of a magnetic dipole moment that interacts with neighboring leading to the spread of this disorder. This disturbance has wave character, and can propagate in the direction of any of the nearest neighbors. These waves of spin can be observed by some experimental methods, such as: the inelastic neutron scattering, inelastic scattering of light including Raman and Brillouin scattering, to name a few. The importance of spin waves emerges clearly when magnetoelectronic devices are operated at low frequencies. This situation, the generation of spin waves can sing in a significant loss of energy of these systems, because the excitation of such waves consumes a small part of the energy of the system, becoming important in the innovation process of electronic systems. These waves can be studied using mathematical models like the Heisenberg, Ising, among others. In this model, we can calculate the dispersion relation of the spin waves. The Heisenberg model can be written in terms of operators of creation and destruction through the Holstein-Primakoff transformations. The Hamiltonian that describes the spin waves is now written in terms of bosonic operators. This mathematical description is similar to Tight-Binding Hamiltonian for fermions. This Hamiltonian described, for example, graphene, a material that has recently been discovered and is being treated with much optimism for having a two-dimensional structure that leads to amazing properties. Many possibilities of applications for it have been studied. Our goal here is to make an analogy between the graphene and a magnetic system on a honeycomb lattice. In the magnetic system, we use the Heisenberg model to find the dispersion relations and understand the behavior of the spin waves of the same. While in graphene, we used the Tight-Binding model to find the energy spectrum. Underscoring we use a mathematically identical method for both and found that the curves for power modes have similar behaviors, respecting the particularities of each. Then, we calculate how these modes behave introduction of impurities in substitution sites on one or two lines of the crystal lattice. / Ondas de spin são excitações coletivas que surgem em materiais magnéticos. Essas excitações são causadas por perturbações no sistema magnético. Por exemplo, uma pequena variação na temperatura provoca a precessão de um momento de dipolo magnético que interage com seus vizinhos levando à propagação dessa perturbação. Essa perturbação tem caráter ondulatório, e pode se propagar na direção de qualquer um dos vizinhos próximos. Essas ondas de spin podem ser observadas através de alguns métodos experimentais, tais como: espalhamento inelástico de nêutrons, espalhamento inelástico de luz incluindo espalhamento Raman e Brillouin. A importância das ondas de spin surge claramente quando aparelhos magnetoeletrônicos são operados a baixas frequências. Nessa situação a geração de ondas de spin pode ser um processo significante na perda de energia desses sistemas, pois a excitação de tais ondas consome uma pequena parte da energia do sistema, as tornando importante no processo de inovação dos sistemas eletrônicos. Essas ondas podem ser estudadas através de modelos matemáticos como o de Heisenberg, Ising, dentre outros. Nesse modelo, podemos calcular a relação de dispersão das ondas de spin. O modelo de Heisenberg pode ser escrito em termos de operadores de criação e destruição através das transformações de Holstein-Primakoff. O Hamiltoniano que descreve as ondas de spin é agora escrito em termos de operadores bosônicos. Essa descrição matemática é semelhante ao Hamiltoniano Tight-Binding para férmions. Tal Hamiltoniano descreve, por exemplo, o grafeno, um material que foi descoberto recentemente e vem sendo tratado com muito otimismo, por ter uma estrutura bidimensional que leva a propriedades surpreendentes. Muitas possibilidades de aplicações para ele vêm sendo estudadas. Nosso objetivo aqui é fazer uma analogia entre o grafeno e um sistema magnético em uma rede favo de mel. No sistema magnético, utilizamos o Modelo de Heisenberg para encontrar as relações de dispersão e conhecer o comportamento das ondas de spin do mesmo. Enquanto no grafeno, utilizamos o modelo Tight-Binding para encontrar o espectro de energia. Ressaltando que utilizamos um método matematicamente idêntico para ambos e que as curvas encontradas para os modos de energia são idênticas. Então, calculamos como esses modos se comportam com a introdução de impurezas em substituição em sítios de uma ou duas linhas da rede cristalina.
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A quantum mechanical study of dopants in diamondLombardi, Enrico Bruno 11 1900 (has links)
Physics / D.Phil (Physics)
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Picosecond degenerate four-wave mixing in semiconductorsCanto, Edesly J. 05 1900 (has links)
This study reports on a variety of experimental and theoretical studies conducted in ZnSe, CdTe, and in semiconductor-doped glasses. The transient picosecond degenerate four-wave mixing (DFWM) experiments performed in these II-VI direct-gap semiconductors are part of our efforts to understand the picosecond dynamics of the free-carriers generated via two and three-photon absorption.
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Atomistic simulation studies of nickel and cobalt doped manganese-based cathode materialsTsebesebe, Nkgaphe Tebatjo January 2021 (has links)
Thesis (M.Sc. (Physics)) -- University of Limpopo, 2021 / The stead-fast demand for sustainable lithium-ion batteries (LIB) with competitive electrochemical properties, safety, reduced costs, and long-life cycle, calls for intensive efforts towards the development of new battery cathode materials. The layered transition metal oxides formulated LiMO2 (M: Mn, Ni and Co) have attracted considerable attention due to their capability to optimize the discharge capacity, cycling rate, electrochemical stability and lifetime. The transition metals Mn, Ni and Co (NMC) have been reported to contribute towards enhancement of the performance of NMC based lithium-ion batteries.
In this work, the electronic properties of transition metal oxides LiMO2 (M: Mn, Ni and Co) as individual crystal structures are studied using density functional theory (DFT+U) in the local density and generalized gradient approximation (LDA and GGA). The Hubbard U values together with the low spin transition metal in 3+ charge state (Mn3+, Ni3+ and Co3+) predicts the electrical conductivity of the materials. The conductivity is associated predominantly with 3d states of the transition metals (Mn, Ni and Co) and 2d character in oxygen. The LiNiO2 material is high in conductivity, while both LiMnO2 and LiCoO2 are low in electrical conductivity. All independent elastic constants satisfy the mechanical stability criterion of orthorhombic materials implying stability of the materials. However, the phonon dispersion curves display imaginary vibration along high symmetry direction for LiCoO2. The heats of formations predict that the LiNiO2 is the most thermodynamically stable material while the LiMnO2 is the least thermodynamically stable material. The derived interatomic potentials produced NiO and CoO structures with a difference of less than 1% and 9% respectively, from the experimental structures. The structures were melted at temperatures close to their experimental values from molecular dynamics. The radial distribution curves and Nano architectures presented the melting point of NiO and CoO at 2250K and 2000K respectively. All independent elastic constants satisfy the mechanical stability criterion of cubic materials implying stability of the materials. The high electrical conductivity and thermodynamic favourability LiNiO2 suggests that the material can be the most recommendable material as a cathode material and further improved through doping. This will add the overall enhancement of the electrochemical performance while stabilizing structural stability of the cathode material in high energy density Li-ion batteries. / National Research Foundation (NRF)
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Deep level defects study of arsenic implanted ZnO single crystalZhu, Congyong., 朱從佣. January 2008 (has links)
published_or_final_version / Physics / Master / Master of Philosophy
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Aproximação de Thomas-Fermi aplicada a estruturas semicondutoras delta-dopadas / The Thomas-Fermi theory of Delta-Si:GaAs superlatticesBarbosa, José Camilo 03 September 1992 (has links)
Neste trabalho usamos a teoria de Thomas-Fermi para estudar as propriedades eletrônicas de semicondutores planarmente dopados, ou delta-dopados, com densidade de dopantes de moderada a alta. O principal objetivo do trabalho é a verificação de que esta teoria apresenta muito bons resultados com os do método auto-consistente na aproximação de Hartree quando aplicada a este tipo de problema. Verificamos que muitas situações físicas relacionadas a semicondutores delta-dopados podem ser descritas de uma maneira simples e com muito bons resultados. Estudamos o problema de um poço isolado e o problema da super-rede, comparando os resultados de Thomas-Fermi e Hartree. / In this work we have used the Thomas-Fermi theory to study the electronic properties of planar doped semiconductors, or delta-doping, with a moderate to high density of dopants. The main aim of this work is to verify that this theory gives very good results when compared with the self-consistent method in the Hartree aproximation. We have checked that many physical situations related to delta-doping can be described in a simple manner and also with very good results. We have studied the single delta problem and the superlattice problem and we have compared the Thomas-Fermi´s and Hartree´s results.
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