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  • About
  • The Global ETD Search service is a free service for researchers to find electronic theses and dissertations. This service is provided by the Networked Digital Library of Theses and Dissertations.
    Our metadata is collected from universities around the world. If you manage a university/consortium/country archive and want to be added, details can be found on the NDLTD website.
121

Metrology of gan electronics using micro-raman spectroscopy

Beechem, Thomas E., III. January 2008 (has links)
Thesis (Ph.D)--Mechanical Engineering, Georgia Institute of Technology, 2009. / Committee Chair: Graham, Samuel; Committee Member: Bassiri-Gharb, Nazanin; Committee Member: Doolittle, William A.; Committee Member: Garimella, Srinivas; Committee Member: Green, Dan; Committee Member: Sitaraman, Suresh. Part of the SMARTech Electronic Thesis and Dissertation Collection.
122

Characterization of p-type wide band gap transparent oxide for heterojunction devices

Lim, Sang-Hyun, January 2009 (has links)
Thesis (Ph. D.)--University of Massachusetts Amherst, 2009. / Includes bibliographical references (p. 103-107). Print copy also available.
123

Multiscale modeling of thermal transport in gallium nitride microelectronics

Christensen, Adam Paul. January 2009 (has links)
Thesis (Ph.D)--Mechanical Engineering, Georgia Institute of Technology, 2010. / Committee Chair: Samuel Graham; Committee Member: Donald Dorsey; Committee Member: Douglas Yoder; Committee Member: Michael Leamy; Committee Member: Sankar Nair; Committee Member: Zhuomin Zhang. Part of the SMARTech Electronic Thesis and Dissertation Collection.
124

Enhanced device performance of III-nitride HEMTs on sapphire substrates by MOCVD /

Feng, Zhihong. January 2006 (has links)
Thesis (Ph.D.)--Hong Kong University of Science and Technology, 2006. / Includes bibliographical references. Also available in electronic version.
125

Preparação de catalisadores de reforma de glicerol para células a combustível de eletrólito sólido

Silva, Rafael Innocenti Vieira da [UNESP] 08 January 2010 (has links) (PDF)
Made available in DSpace on 2014-06-11T19:23:29Z (GMT). No. of bitstreams: 0 Previous issue date: 2010-01-08Bitstream added on 2014-06-13T18:09:38Z : No. of bitstreams: 1 silva_riv_me_bauru_prot.pdf: 20922417 bytes, checksum: 7a0be809afb7e675e99bba1b3539c247 (MD5) / Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq) / O presente trabalho teve como objetivo preparar o compósito de 1% (massa) de rutênio suportado sobre o condutor misto cerâmico (iônico e eletrônico), 'Ti IND. x'('Gd IND. 0,2''Ce IND. 0,8')'IND. (1-x)''O IND. (2-δ)', onde 0'< OU ='x'<OU='0,1, para utilizar como catalisador de reforma e ânodo (eletrodo tipo reforma interna) em Células a Combustível de Óxido Sólido (SOFC). O suporte cerâmico foi sintetizado pelo Método do Precursor Polimérico e calcinado a 400ºC, 700ºC, 1000ºC e 1150ºC em atmosfera estática de ar, sendo caracterizado por análise térmica simultânea (TG/DTA), Difração de Raio X (DRX) com refinamento estrutural pelo Método de Rietveld (REMR), análise textural por adsorção de 'N IND. 2' a 77K, Microscopia Eletrônica de Varredura (MEV) e Energia Dispersiva de Raio X (EDX). O Ru foi depositado (1% em massa) sobre o suporte cerâmico pelo Método do Ácido Fórmico. Em seguida foi calcinado a 300ºC em atmosfera de 'N. IND. 2' e tratado a 1000ºC em atmosfera de 'H IND. 2' (20% em 'H IND. 2' ). A deposição do Ru foi confirmada pela Espectrometria de Emissão Atômica com plasma acoplado indutivamente (ICP-AES). A caracterização do compósito foi feita mediante DRX, MEV com Fonte de Emissão Eletrostática (MEV-FEG) e Microscopia Eletrônica de Transmissão (MET). por último, o material compósito de Ru foi submetido a testes catalíticos para hidro-reforma de glicerol. A análise térmica do suporte cerâmico mostrou que os compostos orgânicos são eliminados até 700ºC. Os resultados de DRX e REMR mostraram a presença fase única de fluorita (g.e. Fm3m) em T=700ºC para 0'< OU ='x'<OU='0,1 e em T=1000ºC, para x<0,1. Em T=1000ºC e em T=1150ºC observou-se a presença da segunda fase, de titanato de gadolínio ('Gd IND. 2''Ti IND. 2''O IND. 7', g.e. Fd3m) para x'>OU='0,1 e x'>OU='0,025, respectivamente... / The current work aimed to prepare the composite of ruthenium supported on the ceramic mixed conductor (ionic and electronic), 'Ti IND. x'('Gd IND. 0,2''Ce IND. 0,8')'IND. (1-x)''O IND. (2-δ)',where 0'< OU ='x'<OU='0,1, to be used as a catalyst for the reforming and anode (internal reforming electrode) in Oxide Solid Fuel Cells (SOFC). The ceramic supports were synthesized by Polymeric Precursor Method and calcined at 400ºC, 700ºC, 1000ºC and 1150ºC in air. The characterization was carried out by simultaneous thermal analysis (TG/DTA), X-ray Diffraction (XRD) being the structure refined by Rietveld Method (SRRM), textural analysis by adsorption of 'N IND. 2' at 77K, Scanning Electronic Microscopy (SEM) and Energy Dispersive X-ray (EDX). The Ru was deposited on ceramic support by Formic Acid Method, calcined at 300ºC in 'N. IND. 2' and calcined at 1000ºC under 20vol% 'H IND. 2' flow. The deposition was confirmed by Inductively Coupled Plasma - Atomic Emission Spectrometry (ICP-AES). The characterization of the composite was performed by XRD, Field Emission Gun - Scanning Electronic Microscopy (FEG-SEM) and Transmission Electronic Microscopy (TEM). Finally, the catalytical activity of the composite material for glycerol steam reforming reaction was evaluated. The thermal analysis showed that most of organic compounds derived from the synthesis is eliminated up to 700ºC. The XRD and SRRM results showed that the samples crystallized as fluorite single phase (s.g.Fm3m) at T=700ºC for 0'< OU ='x'<OU='0,1and T=1000ºC,for x<0,1. The secondary phase of ('Gd IND. 2''Ti IND. 2''O IND. 7', g.e. Fd3m) was observed in the sample with x'>OU='0,1 when calcined at T=1000ºC and x'>OU='0.025 for the calcination temperature of 1150ºC. The textural analysis showed that the samples treated at 700ºC are mesoporous solids and, significant surface and porosity loss took place when treated at 1000ºC... (Complete abstract click electronic access below)
126

Enhanced Performance in Quantum Dot Solar Cell with TiOx and N2 Doped TiOx Interlayers

January 2011 (has links)
abstract: As the 3rd generation solar cell, quantum dot solar cells are expected to outperform the first 2 generations with higher efficiency and lower manufacture cost. Currently the main problems for QD cells are the low conversion efficiency and stability. This work is trying to improve the reliability as well as the device performance by inserting an interlayer between the metal cathode and the active layer. Titanium oxide and a novel nitrogen doped titanium oxide were compared and TiOxNy capped device shown a superior performance and stability to TiOx capped one. A unique light anneal effect on the interfacial layer was discovered first time and proved to be the trigger of the enhancement of both device reliability and efficiency. The efficiency was improved by 300% and the device can retain 73.1% of the efficiency with TiOxNy when normal device completely failed after kept for long time. Photoluminescence indicted an increased charge disassociation rate at TiOxNy interface. External quantum efficiency measurement also inferred a significant performance enhancement in TiOxNy capped device, which resulted in a higher photocurrent. X-ray photoelectron spectrometry was performed to explain the impact of light doping on optical band gap. Atomic force microscopy illustrated the effect of light anneal on quantum dot polymer surface. The particle size is increased and the surface composition is changed after irradiation. The mechanism for performance improvement via a TiOx based interlayer was discussed based on a trap filling model. Then Tunneling AFM was performed to further confirm the reliability of interlayer capped organic photovoltaic devices. As a powerful tool based on SPM technique, tunneling AFM was able to explain the reason for low efficiency in non-capped inverted organic photovoltaic devices. The local injection properties as well as the correspondent topography were compared in organic solar cells with or without TiOx interlayer. The current-voltage characteristics were also tested at a single interested point. A severe short-circuit was discovered in non capped devices and a slight reverse bias leakage current was also revealed in TiOx capped device though tunneling AFM results. The failure reason for low stability in normal devices was also discussed comparing to capped devices. / Dissertation/Thesis / M.S. Materials Science and Engineering 2011
127

Correspondência entre ondas de spin de um ferromagneto em uma rede favo de mel e a banda de energia do grafeno / Correspondence between spin waves of a ferromagnet in a honeycomb network and the energy band of graphene

Cunha, Anderson Magno Chaves January 2014 (has links)
CUNHA, Anderson Magno Chaves. Correspondência entre ondas de spin de um ferromagneto em uma rede favo de mel e a banda de energia do grafeno. 2014. 88 f. Tese (Doutorado em Física) - Programa de Pós-Graduação em Física, Departamento de Física, Centro de Ciências, Universidade Federal do Ceará, Fortaleza, 2014. / Submitted by Edvander Pires (edvanderpires@gmail.com) on 2014-08-29T18:55:19Z No. of bitstreams: 1 2014_tese_amccunha.pdf: 4561415 bytes, checksum: 8c98814cdc7a5600944fbf5d0bfb400f (MD5) / Approved for entry into archive by Edvander Pires(edvanderpires@gmail.com) on 2014-08-29T18:56:57Z (GMT) No. of bitstreams: 1 2014_tese_amccunha.pdf: 4561415 bytes, checksum: 8c98814cdc7a5600944fbf5d0bfb400f (MD5) / Made available in DSpace on 2014-08-29T18:56:57Z (GMT). No. of bitstreams: 1 2014_tese_amccunha.pdf: 4561415 bytes, checksum: 8c98814cdc7a5600944fbf5d0bfb400f (MD5) Previous issue date: 2014 / Spin waves are collective excitations that occur in magnetic materials. These excitations are caused by disturbances in the magnetic system. For example, a small change in temperature causes the precession of a magnetic dipole moment that interacts with neighboring leading to the spread of this disorder. This disturbance has wave character, and can propagate in the direction of any of the nearest neighbors. These waves of spin can be observed by some experimental methods, such as: the inelastic neutron scattering, inelastic scattering of light including Raman and Brillouin scattering, to name a few. The importance of spin waves emerges clearly when magnetoelectronic devices are operated at low frequencies. This situation, the generation of spin waves can sing in a significant loss of energy of these systems, because the excitation of such waves consumes a small part of the energy of the system, becoming important in the innovation process of electronic systems. These waves can be studied using mathematical models like the Heisenberg, Ising, among others. In this model, we can calculate the dispersion relation of the spin waves. The Heisenberg model can be written in terms of operators of creation and destruction through the Holstein-Primakoff transformations. The Hamiltonian that describes the spin waves is now written in terms of bosonic operators. This mathematical description is similar to Tight-Binding Hamiltonian for fermions. This Hamiltonian described, for example, graphene, a material that has recently been discovered and is being treated with much optimism for having a two-dimensional structure that leads to amazing properties. Many possibilities of applications for it have been studied. Our goal here is to make an analogy between the graphene and a magnetic system on a honeycomb lattice. In the magnetic system, we use the Heisenberg model to find the dispersion relations and understand the behavior of the spin waves of the same. While in graphene, we used the Tight-Binding model to find the energy spectrum. Underscoring we use a mathematically identical method for both and found that the curves for power modes have similar behaviors, respecting the particularities of each. Then, we calculate how these modes behave introduction of impurities in substitution sites on one or two lines of the crystal lattice. / Ondas de spin são excitações coletivas que surgem em materiais magnéticos. Essas excitações são causadas por perturbações no sistema magnético. Por exemplo, uma pequena variação na temperatura provoca a precessão de um momento de dipolo magnético que interage com seus vizinhos levando à propagação dessa perturbação. Essa perturbação tem caráter ondulatório, e pode se propagar na direção de qualquer um dos vizinhos próximos. Essas ondas de spin podem ser observadas através de alguns métodos experimentais, tais como: espalhamento inelástico de nêutrons, espalhamento inelástico de luz incluindo espalhamento Raman e Brillouin. A importância das ondas de spin surge claramente quando aparelhos magnetoeletrônicos são operados a baixas frequências. Nessa situação a geração de ondas de spin pode ser um processo significante na perda de energia desses sistemas, pois a excitação de tais ondas consome uma pequena parte da energia do sistema, as tornando importante no processo de inovação dos sistemas eletrônicos. Essas ondas podem ser estudadas através de modelos matemáticos como o de Heisenberg, Ising, dentre outros. Nesse modelo, podemos calcular a relação de dispersão das ondas de spin. O modelo de Heisenberg pode ser escrito em termos de operadores de criação e destruição através das transformações de Holstein-Primakoff. O Hamiltoniano que descreve as ondas de spin é agora escrito em termos de operadores bosônicos. Essa descrição matemática é semelhante ao Hamiltoniano Tight-Binding para férmions. Tal Hamiltoniano descreve, por exemplo, o grafeno, um material que foi descoberto recentemente e vem sendo tratado com muito otimismo, por ter uma estrutura bidimensional que leva a propriedades surpreendentes. Muitas possibilidades de aplicações para ele vêm sendo estudadas. Nosso objetivo aqui é fazer uma analogia entre o grafeno e um sistema magnético em uma rede favo de mel. No sistema magnético, utilizamos o Modelo de Heisenberg para encontrar as relações de dispersão e conhecer o comportamento das ondas de spin do mesmo. Enquanto no grafeno, utilizamos o modelo Tight-Binding para encontrar o espectro de energia. Ressaltando que utilizamos um método matematicamente idêntico para ambos e que as curvas encontradas para os modos de energia são idênticas. Então, calculamos como esses modos se comportam com a introdução de impurezas em substituição em sítios de uma ou duas linhas da rede cristalina.
128

A quantum mechanical study of dopants in diamond

Lombardi, Enrico Bruno 11 1900 (has links)
Physics / D.Phil (Physics)
129

Preparação de catalisadores de reforma de glicerol para células a combustível de eletrólito sólido /

Silva, Rafael Innocenti Vieira da. January 2010 (has links)
Orientador: Margarida Juri Saeki / Banca: Cristiane Barbieri Rodella / Banca: Luis Vicente de Andrade Scalvi / O Programa de Pós-Graduação em Ciência e Tecnologia de Materiais, PosMat, tem caráter institucional e integra as atividades de pesquisa em materiais de diversos campi da Unesp / Resumo: O presente trabalho teve como objetivo preparar o compósito de 1% (massa) de rutênio suportado sobre o condutor misto cerâmico (iônico e eletrônico), 'Ti IND. x'('Gd IND. 0,2''Ce IND. 0,8')'IND. (1-x)''O IND. (2-δ)', onde 0'< OU ='x'<OU='0,1, para utilizar como catalisador de reforma e ânodo (eletrodo tipo reforma interna) em Células a Combustível de Óxido Sólido (SOFC). O suporte cerâmico foi sintetizado pelo Método do Precursor Polimérico e calcinado a 400ºC, 700ºC, 1000ºC e 1150ºC em atmosfera estática de ar, sendo caracterizado por análise térmica simultânea (TG/DTA), Difração de Raio X (DRX) com refinamento estrutural pelo Método de Rietveld (REMR), análise textural por adsorção de 'N IND. 2' a 77K, Microscopia Eletrônica de Varredura (MEV) e Energia Dispersiva de Raio X (EDX). O Ru foi depositado (1% em massa) sobre o suporte cerâmico pelo Método do Ácido Fórmico. Em seguida foi calcinado a 300ºC em atmosfera de 'N. IND. 2' e tratado a 1000ºC em atmosfera de 'H IND. 2' (20% em 'H IND. 2' ). A deposição do Ru foi confirmada pela Espectrometria de Emissão Atômica com plasma acoplado indutivamente (ICP-AES). A caracterização do compósito foi feita mediante DRX, MEV com Fonte de Emissão Eletrostática (MEV-FEG) e Microscopia Eletrônica de Transmissão (MET). por último, o material compósito de Ru foi submetido a testes catalíticos para hidro-reforma de glicerol. A análise térmica do suporte cerâmico mostrou que os compostos orgânicos são eliminados até 700ºC. Os resultados de DRX e REMR mostraram a presença fase única de fluorita (g.e. Fm3m) em T=700ºC para 0'< OU ='x'<OU='0,1 e em T=1000ºC, para x<0,1. Em T=1000ºC e em T=1150ºC observou-se a presença da segunda fase, de titanato de gadolínio ('Gd IND. 2''Ti IND. 2''O IND. 7', g.e. Fd3m) para x'>OU='0,1 e x'>OU='0,025, respectivamente... (Resumo completo, clicar acesso eletrônico abaixo) / Abstract: The current work aimed to prepare the composite of ruthenium supported on the ceramic mixed conductor (ionic and electronic), 'Ti IND. x'('Gd IND. 0,2''Ce IND. 0,8')'IND. (1-x)''O IND. (2-δ)',where 0'< OU ='x'<OU='0,1, to be used as a catalyst for the reforming and anode (internal reforming electrode) in Oxide Solid Fuel Cells (SOFC). The ceramic supports were synthesized by Polymeric Precursor Method and calcined at 400ºC, 700ºC, 1000ºC and 1150ºC in air. The characterization was carried out by simultaneous thermal analysis (TG/DTA), X-ray Diffraction (XRD) being the structure refined by Rietveld Method (SRRM), textural analysis by adsorption of 'N IND. 2' at 77K, Scanning Electronic Microscopy (SEM) and Energy Dispersive X-ray (EDX). The Ru was deposited on ceramic support by Formic Acid Method, calcined at 300ºC in 'N. IND. 2' and calcined at 1000ºC under 20vol% 'H IND. 2' flow. The deposition was confirmed by Inductively Coupled Plasma - Atomic Emission Spectrometry (ICP-AES). The characterization of the composite was performed by XRD, Field Emission Gun - Scanning Electronic Microscopy (FEG-SEM) and Transmission Electronic Microscopy (TEM). Finally, the catalytical activity of the composite material for glycerol steam reforming reaction was evaluated. The thermal analysis showed that most of organic compounds derived from the synthesis is eliminated up to 700ºC. The XRD and SRRM results showed that the samples crystallized as fluorite single phase (s.g.Fm3m) at T=700ºC for 0'< OU ='x'<OU='0,1and T=1000ºC,for x<0,1. The secondary phase of ('Gd IND. 2''Ti IND. 2''O IND. 7', g.e. Fd3m) was observed in the sample with x'>OU='0,1 when calcined at T=1000ºC and x'>OU='0.025 for the calcination temperature of 1150ºC. The textural analysis showed that the samples treated at 700ºC are mesoporous solids and, significant surface and porosity loss took place when treated at 1000ºC... (Complete abstract click electronic access below) / Mestre
130

Estudos de Campo Eletrico em Super-Redes &#948;-SiGaAs atraves das Tecnicas de Espectroscopia Raman e Fotorefletancia / Time-resolved photoreflectance in &#948; superlattices

Dione Fagundes de Sousa 26 September 1996 (has links)
Neste trabalho fazemos um estudo dos campos elétricos existentes em super-redes &#948;-Si:GaAs As técnicas de espectroscopia Raman e fotorefletancia foram utilizadas para fins de comparação do campo elétrico medido indiretamente (Raman) e diretamente (fotorefletancia). Com o objetivo de eliminar os campos elétricos através do efeito fotovoltaico, foram feitas medidas de fotorefletancia para altas intensidades do feixe de prova, porem apenas reduções de ate 30% no valor destes campos foram obtidas. Os tempos de resposta dos portadores responsáveis pela modulação dos campos elétricos foram inferidos através de medidas de fotorefletancia sensível a fase e estão em bom acordo com os tempos medidos através de uma técnica de fotorefletancia desenvolvida em nosso laboratório / In the present work we report a study of surface and interface electric fields in &#948;-Si:GaAs superlattices. Techniques such as photoreflectance (PR) and Raman spectroscopy were used to determine surface electric fields in a direct and indirect way, respectively. The results agree with those expected by Fermi level pinning at the surface. In order to eliminate electric fields via photovoltaic effect, photoreflectance spectra were obtained at high probe intensities, but reductions of just 30% were achieved. In time domain, we show that carriers response time responsible for modulation of electric field can be obtained by means of phase sensitive PR, and are in good agreement with those measured in a time resolved PR technique, developed in our laboratory

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