This work describes multiband photon detection techniques based on novel semiconductor device concepts and detector designs with simultaneous detection of dierent wavelength radiation such as UV and IR. One aim of this investigation is to examine UV and IR detection concepts with a view to resolve some of the issues of existing IR detectors such as high dark current, non uniformity, and low operating temperature and to avoid having additional optical components such as filters in multiband detection. Structures were fabricated to demonstrate the UV and IR detection concepts and determine detector parameters: (i) UV/IR detection based on GaN/AlGaN heterostructures, (ii) Optical characterization of p-type InP thin films were carried out with the idea of developing InP based detectors, (iii) Intervalence band transitions in InGaAsP/InP heterojunction interfacial workfunction internal photoemission (HEIWIP) detectors. Device concepts, detector structures, and experimental results are discussed. In order to reduce reflection, TiO2 and SiO2 nanostructured thin film characterization and application of these as anti-reflection coatings on above mentioned detectors is also discussed.

The infrared and millimeter-wave portions of the spectrum both have their advantages for development of imaging systems. Because of the difference in wavelengths, infrared imagers offer inherently high resolution, while millimeter-wave systems have better penetration through atmospheric aerosols such as fog and smoke. Shared-aperture imaging systems employing a common focal-plane array that responds to both wavebands are desirable from the viewpoint of overall size and weight. We have developed antenna-coupled sensors that respond simultaneously at 30 THz and at 94 GHz, utilizing electron-beam lithography. Slot-antenna designs were found to be particularly suitable for coupling radiation into metal-oxide-metal (MOM) tunnel diodes at both frequencies. The MOM diodes are fabricated in a layered structure of Ni-NiO-Ni, and act as rectifying contacts. With contact areas as low as 120 nm × 120 nm, these diodes have time constants commensurate with rectification at frequencies across the desired millimeter-wave and infrared bands. One challenge in the development of true focal-plane array imagers across this factor-of-300 bandwidth is that the optimum spatial sampling interval on the focal plane is different in both bands. We have demonstrated a focal plane with interleaved infrared and millimeter-wave sensors by fabricating infrared antennas in the ground plane of the millimeter-wave antenna. Measured performance data in both bands are presented for individual antenna-coupled sensors as well as for devices in the dual-band focal-plane-array format.