The promising role resistive random-access memory (RRAM) plays in the imminent reality of wearable electronics calls for a new, updated physical model of their operating mechanism. Their high applicability as the next-generation flexible non-volatile memory (NVM) devices has promoted the recent emergence of a novel ultra-thin (< 5nm) organic/inorganic hybrid dielectric RRAM. A deep understanding of their resistive switching (RS) behavior is required to unlock their suitability in future electronics applications. However, the extremely reduced thicknesses bring about new challenges in terms of material characterization sample processing, while the RS observations through electrical characterization techniques lack uniformity in the key switching parameters, thus hindering the identification of any clear trends.  This work studies the RS mechanism in ultra-thin Al/Hf-hybrid/Ni RRAM devices through uniformity-improved electrical observations. First, the focus is to implement a ramped-pulse train method during the reset process to reduce the dispersion of the voltage and resistance fluctuations at different starting voltage amplitudes and pulse widths. After finding the optimal electrical programming conditions for reduced parameter dispersions, a temperature test was performed to study the contributions of the metal ions and oxygen vacancies (V2+) in the switching layer. Finally, a physical model describing the operating mechanism in flexible RRAM is proposed after the close observation and study of the processed devices. The model is based on the coexistence of a hetero-metallic portion composed of Al and Hf3Al2, and a V2+ portion connected to form the hybrid conducting filament (CF) and turning the device on. The CF forming processes emphasize the strong presence of these vacancies partaking in RS, as the temperature dependence results suggest the majority of their concentration to be generated during this step. Also, the different electrical potential, temperature, and concentration gradients influencing the V2+ migration during RS may explain some of the failure mechanisms in the rupture and the re-forming of the filament. Additionally, the possible presence of a thin Al-oxide layer in the Al/Hf-hybrid interface may give a reason for leaky on-states. A detailed physical model of the RS mechanism in next-generation flexible RRAMs is key to learn to unlock a range of emerging technologies fitted to today’s needs. / Den senaste introduktionen av ultratunn (<5 nm) organisk-oorganisk hybrid dielektrisk RRAM som nästa generations icke-flyktiga minnesenheter kräver en djup förståelse för hybridskiktresistiv växling (RS). Den extremt reducerade tjockleken hindrar emellertid deras bearbetbarhet för materialkarakteriseringstekniker. Dessutom hindrar den dåliga enhetligheten i viktiga omkopplingsparametrar fortfarande i RRAM att alla trender kan definieras tydligt genom elektrisk karakterisering. Detta arbete använder elektrisk manipulation genom en RPS-metod (ramped-pulse series) för att förbättra spännings- och motståndsfluktuationerna i återställningsprocessen för ultratunna Al/Hf-hybrid/Ni-enheter vid olika spänningsamplitud, pulsbredd och temperaturförhållanden. Från de erhållna RPS-optimerade resultaten föreslås en ny och detaljerad fysisk modell som beskriver driftsmekanismen. Samexistensen i den ledande filamenten (CF) av en hybridmetalldel, sammansatt av Al och Hf3Al2, och en syrevakansdel bekräftas. Vår modell betonar vakansbidraget i RS, där majoriteten genereras under CF-formningsprocessen och deltar i olika grad i filamentbrottet för RPS och ingen RPS-bearbetade enheter via Joule-uppvärmning, drift och Fick-krafter. Dessutom förklaras kopplingsfelhändelser baserat på närvaron av ett Al2O3-lager i Al/Hf-hybridgränssnittet.