In recent years, titanium oxide thin film has been studied extensively for using in optical devices and electronic devices such as waveguide and future ultra-large scale dynamic random access memory (DRAM). Titanium oxide film is very promising candidates for applications with exhibiting higher dielectric constant, high refractive index and high chemical stability. Liquid phase deposition is a novel method to grow oxide layer. It has the advantage of low-temperature deposition, good step coverage, and selective growth. We use this technology to deposition titanium oxide film instead of the conventional methods of growth titanium oxide film, such as sol-gel, sputtering, LPCVD, APCVD, and PECVD. But low deposition rate is one of the drawbacks drawbacks of LPD process. In previous study, deposition rate of titanium oxide films was very slow (6Å/min). The mixture of H2TiF6(aq) and H3BO3(aq) was used as the principal solution. In this study, we incorporated HNO3(aq) into the principal solution for enhance the deposition rate. In addition, we study the deposition rate and dielectric constant of titanium oxide films as functions of H2O addition, NH4OH(aq), and Ba(OH)2(aq) concentrations in our principal solution. We examine electrical characteristics and thickness of the titanium films by capacitance-voltage measurement and Spectroscopic Reflectance. The deposition rate of titanium oxide film increases from 6 Å/min to 475Å/min and the dielectric constant is about 36.1 with adding HNO3 and opportune NH4OH into the principal solution.