Thomson scattering from free electrons in a high-intensity laser focus has been widely studied analytically, but not many measurements of this scattering have been made. We measure polarization-resolved nonlinear Thomson scattering from electrons in a high-intensity laser focus using a parabolic mirror. The weak scattering signal is distinguished from background noise using single-photon detectors and nanosecond time-resolution to distinguish a prompt scattering signal from noise photons. The azimuthal and longitudinal components of the fundamental, second, and third harmonics were measured. Our measurements reasonably match theoretical results, but also show some asymmetry in the emission patterns.

Master’s thesis on “Simulation of processes in physic of solid state using computer programs” consists of an introduction, 3 chapters, conclusions, 22 references of literature, 15 appendixes and 1 compact disc. There are presented 3 tables and 31 pictures in the work as well. The work comprises 56 pages (with appendixes there are 93 pages). The aim of this work is seeking to create demonstrations for lectures in physic of solid state using the mathematical computer system. The first chapter deals with the possibility to use the computer programs in simulation of varied processes and phenomena and put into practice at lectures of solid state physics. The second chapter deals with particular phenomena. There are described the simulations of these phenomena as well. The computer mathematical system MathCAD was used to simulate and analyze the density of band states, Fermi – Dirac and Bolcman functions in the various temperature (5 K < T < 500 K). If we use the state destiny, Fermi – Dirac and Bolcman functions, we will get a distribution of free electrons by values of energy. Dynamic graph of functions is presented, which shows a variation probability of electron to be in E energy state subject to variations of temperature T. There is analyzing dependence of molar heat of solid state against to temperature T. The simulation of Fermi layer and concentration of charge at intrinsic and at impurity semiconductor are composed in this work as well. The using of simulations in lectures... [to full text]