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The objective of this thesis is to study the fracture behavior of bulk metallic glasses. For this purpose, detailed finite element investigation of the mode I and mixed mode (I and II) stationary crack tip fields under plane strain, small scale yielding conditions is carried out. An implicit backward Euler finite element implementation of the Anand and Su constitutive model [Anand, L. and Su, C., 2005, J. Mech. Phys. Solids 53, 1362] is used in the simulations. The effects of internal friction (μ), strain softening, Poisson's ratio (ν) and elastic mode mixity (Me) on the near-tip stress and deformation fields are examined. The results show that under mode I loading, a higher μ leads to a larger normalized plastic zone size and higher plastic strain level near the notch tip, but causes a substantial decrease in the opening stress. The brittle crack trajectories and shear band patterns around the notch are also simulated. An increase in ν reduces the extent of plastic zone and plastic strain levels in front of the notch tip. The results from mixed mode simulations show that increase in the mode II component of loading dramatically increases the maximum plastic zone extent, lowers the stresses and significantly enhances the plastic strain levels near the notch tip. Higher μ causes the peak magnitudes of tensile tangential stress to decrease. The implications of the above results on the fracture response of bulk metallic glasses are discussed. The possible variations of fracture toughness with mode mixity predicted by employing two simple fracture criteria are examined. Finally, mixed mode (I and II) fracture experiments on a Zr-based bulk metallic glass are performed. It is found that the fracture toughness increases with Me and Jc under mode I is higher than that under mode II loading by a factor of 4. The operative failure mechanism and fracture process zone size are discerned based on observations of incipient crack growth and fractographs. Lastly, a fracture criterion is proposed which predicts the experimentally observed variation of fracture toughness with mode mixity.

Physical properties of materials and their constituents are interrelated. Though the basic structural unit involved also plays a role in deciding the properties, this can be manipulated to a certain extent, by carefully selecting the basic ingredients or by varying the composition. In order to tailor the properties of the materials according to the need, the relationship between the properties and the structure has to be established. Glasses, due to their inherent disorder, don’t have the privilege of using symmetry as enjoyed by their crystalline counterparts. Given their components and composition there is no immediate and easy way of predicting all the observed properties of glasses. This is not considering computer simulations and DFT calculations. Hence we go back to play with nature, i.e., do experiments. Technological applications like LASERs, optic fibers, photosensitive semiconducting thin films, solid state batteries for energy storage etc. have greatly increased the interest in the fundamental properties of disordered materials. Large coefficient of linear expansion of germanate glasses is made use in glass-to-metal seals for ultra high vacuum. More over, many germanate based glasses with specially tailored dispersion properties have been developed. GeO2 based glasses are in fibre optics in the IR region of 1.5 to 1.8 microns. Borate glasses are resistant to thermal and chemical attack. They lower the melting temperature of glasses thus facilitating large scale production.Both borates and germanates have been worked upon extensively. Alkali boro germanate systems are interesting inherently. Borates and Germanates both are glass formers by themselves. The continuous random network formed by this base glass is modified by the presence of alkali ions. It is interesting to see to what extent the alkali ions can maintain the local charge neutrality in their neighborhood by creating non bridging oxygen atoms and how the presence of two formers is stabilizing the glass matrix. Present Work This thesis work is an attempt to understand the structure of alkali borogermanate glasses 25R2O-25GeO2-(50-x)B2O3-xNd2O3:(R=Li, Na, K and Rb; x=0,0.5). A variety of experimental techniques are available to give a good insight of the structure of glass systems. In this thesis, we have carried out  Optical studies at room temperature to probe the environment of RE ion  AC conductivity at high temperature to probe the alkali ion dynamics  11B MASS NMR of doped systems at room temperature to probe the Boron sites  Raman and Mid-IR experiments at room temperature to probe the various structural groups to get a comprehensive understanding of the structure of these glasses. To facilitate the analysis of the data and discussion of the results from these experiments, the thesis is divided in to four chapters excluding the introduction as categorized above and is presented accordingly. The second chapter begins with the preparation of the glass samples and their characterization. We have used Differential Scanning Calorimetry (DSC), powder XRD and elemental analysis using ICP-OES for characterizing the sample. We have also measured the density and refractive index of the glasses under study. After this section, we describe the results from Optical Absorption and Photoluminescence studies. A brief description of Judd-Ofelt (JO) theory used for the analysis of the results is given. We have calculated the optical parameters and JO parameters and the energy levels of Nd ions in the glass matrix based on absorption studies using program written in Matlab. The procedure to calculate these parameters and their relevance in estimating the important quantities like radiative transfers, branching ratios are discussed. The effect of variation of the alkali ions on these properties is also discussed. In the third chapter, we have investigated AC conductivity in these glasses. These experiments are carried out both as a function of frequency (40 Hz - 15 MHz) and temperature (220 C – 500 C) using a home made portable furnace with a temperature controller. The cable compensation using open and short standards were done at the high temperature end. The data has been analyzed in Electric modulus (M*) formalism using Kohlrausch William Watts (KWW) function. The other basic models used in the literature like Debye, Cole-Cole, Cole Davidson and Havriliak Negami are briefly discussed. The frequency dependence of conductivity in these systems has been ascribed to the hopping motion of the alkali ions. Non-symmetric nature of the imaginary part of M* shows an evidence of non-exponential relaxation. Activation energies were estimated from the temperature variation of the KWW and DC. The fit parameters KWW and KWW shows interesting behavior. KWW in LGBNd and NGBNd show an initial increase with increasing temperature reaching a value of 1, while a contrasting behavior is observed in KGBNd and RGBNd. Barton-Nakajima-Namikawa (BNN) plot of the present study gives a value of 0.67 and 0.7 for the slope parameter p for doped and un-doped samples respectively. BNN plot is used to correlate the ac and dc conductivities in the sample. The deviation of the slope parameter from unity may be an indication of different charge carriers for ac and dc transport. Fourth Chapter describes the room temperature 11B MASS NMR studies in Nd doped glass system. The relevant theory of Zeeman, Dipolar, Quadrupolar and Chemical shift interactions are discussed briefly before the results. The principle used in obtaining high resolution NMR in solids by means Sample spinning is also described. NMR line shape for the central transition (1/2  -1/2) of I=3/2 nuclei (11B) was simulated in Mathematica and fitting was tried in Matlab. Using this background we have analyzed the line shape. In the next part, the results of 11B MASS NMR experiments of doped glasses carried out using Bruker DSX300 at 96.3MHz are presented. The fraction of contribution from four and three co-ordinated 11B to NMR line-shape were identified and calculated. The results show unambiguously the presence of two 3 coordinated 11B sites which were differentiated on the basis of the quadrupolar parameters. In the last chapter we discuss the results of Raman and Mid-IR investigations carried out in these glasses at room temperature. These two important techniques are well established in identifying the structural groups in glass systems. Raman bands observed in the range 200 cm-1 to 1600 cm-1 in these glasses are deconvoluted using gaussian peaks and they have been assigned to various modes of possible structural groups. Two broad MIR absorption bands were observed between 600cm-1 - 1600cm-1 in both doped and undoped glasses. Each band was resolved into gaussian peaks. The band shifts and the changes in the intensities are ascribed to the effects of variation of alkali, as the presence of GeO2 (up to 25mol%) is known not to affect the borate bands as it is a former by itself.

Chalcogenide glass based Phase Change Memories (PCMs) are being considered recently as promising alternatives to conventional non-volatile Random Access Memories (NVRAMs). PCMs offer high performance & low power consumption, in addition to other advantages, such as high scalability, high endurance and compatibility with complementary metal oxide semiconductors (CMOS) technologies. Basically PCM is a resistance variable non-volatile memory in which the memory bit state is defined by the resistance of the material. In this case, the initial ‘OFF’ state (logic zero) corresponds to the high resistance amorphous state and the logic 1 or ‘ON’ state corresponds to low resistance crystalline state. The present thesis work deals with electrical, thermal, mechanical and optical characterization of certain tellurium based chalcogenide glasses in bulk and thin film form for phase change memory applications. A comparative study has been done on the electrical switching behavior of Ge-Te-Se & Ge-Te-Si amorphous thin film samples with their bulk counterparts. Further, electrical switching and thermal studies have been undertaken on bulk Ge-Te-Bi and Ge-Te-Sn series of samples. The composition dependence of switching voltages of bulk and thin film samples studied has been explained on the basis of different factors responsible for electrical switching. The thesis contains ten chapters: Chapter 1 deals with a brief introduction on chalcogenides and their applicability in phase change memories. The glass transition phenomenon, synthesis of chalcogenide alloys, different structural models of amorphous semiconductors and electrical switching behavior are also discussed in detail in this chapter. Further, a brief description of optical and mechanical properties along with the principles of few characterization techniques used is discussed. Also, a brief overview on PCM application of chalcogenides is presented. The second chapter provides the details of various experimental techniques used to measure electrical, thermal, optical and mechanical properties of few tellurium based chalcogenide glassy systems. In the third chapter, the electrical switching behavior of amorphous Al23Te77 thin film devices, deposited in co-planar geometry, has been discussed. It is found that these samples exhibit memory type electrical switching. Scanning Electron Microscopic studies show the formation of a crystalline filament in the electrode region which is responsible for switching of the device from high resistance OFF state to low resistance ON state. The switching behavior of thin film Al-Te samples is found to be similar to that of bulk samples, with the threshold fields of bulk samples being higher. This has been understood on the basis of higher thermal conductance in bulk, which reduces the Joule heating and temperature rise in the electrode region. Electrical switching and thermal behavior of bulk; melt quenched Ge18Te82-xBix glasses (1 ≤ x ≤ 4) are presented in chapter 4. Ge-Te-Bi glasses have been found to exhibit memory type electrical switching behavior, which is in agreement with the lower thermal diffusivity values of these samples. A linear variation in switching voltages (also known as threshold voltages) (Vt) has been found with increase in thickness. The switching voltages have been found to decrease with an increase in temperature which is due to the decrease in the activation energy for crystallization at higher temperatures. Further, Vt of Ge18Te82-xBix glasses have been found to decrease with the increase in Bi content, indicating that in the Ge-Te-Bi system, the resistivity of the additive has a stronger role to play in the composition dependence of Vt, in comparison with the network connectivity and rigidity factors. In addition, the composition dependence of crystallization activation energy has been found to show a decrease with an increase in Bi content. X-ray diffraction studies on thermally crystallized samples reveal the presence of hexagonal Te, GeTe and Bi2Te3 phases. The fifth chapter deals with the electrical switching studies and optical band gap measurements on GexSe35-xTe65 (17 ≤ x ≤ 23) amorphous thin film samples. These thin film samples coated with sandwich geometry are found to switch with very low voltages as compared to bulk samples of the same chalcogenide glasses. The switching voltages and optical band gap are found to increase with the addition of Ge at the expense of Se. High structural cross linking with progressive addition of 4-fold coordinated Ge atoms could be the one of the reasons of increasing switching voltage and stronger Ge-Se bond strength could be the reason of increasing band gap for these chalcogenide glasses. In chapter 6, electrical switching studies on amorphous Ge15Te85-xSix (1 ≤ x ≤ 6) thin film samples have been described and the results are compared with their bulk counterparts. Similar trend has been found for both bulk and film samples when the threshold field is varied with composition. Optical band gap has been measured as a function of composition for these films, which also shows a behavior similar to that of switching voltages. The increasing trend in the variation with composition of electrical switching voltages and optical band gap are due to the increase in network connectivity and rigidity as Si atoms are incorporated into the Ge-Te system. Chapter 7 summarizes the electrical switching and glass forming ability of the Ge-Te-Sn glasses of two different composition tie-lines, namely Ge15Te85-xSnx and Ge17Te83-xSnx. Glasses belonging to both the series have been found to exhibit memory type of electrical switching behavior. The thickness dependence of threshold voltages is also found to support the memory switching behavior of the system. Further, ADSC studies are undertaken to explore the thermal behavior of these glasses which indicates that the crystallization tendency increases as Sn concentration is increased in the Ge-Te network. XRD studies done on two samples from both the series, reveal the fact that Sn atoms do not take part actively to enhance the network connectivity and rigidity. The composition dependence of crystallization temperature, metallicity factor and results of XRD studies are put together to explain the variation with composition of threshold voltages for both the series of samples. In chapter 8, investigations on the electrical switching behavior of Ge15Te85-xSnx (1 ≤ x ≤ 5) and Ge17Te83-xSnx (1 ≤ x ≤ 4) amorphous thin films have been discussed. Both the series of samples have been found to exhibit memory type of electrical switching behavior. The composition dependence of threshold voltage shows a decreasing trend, which has been explained on the basis of the Chemically Ordered Network (CON) model, bond strength and the metallicity factor. The optical band gap variation of both the series also exhibits a similar decreasing trend with composition. The observed behavior has been understood on the basis of higher atomic radius of Sn atom than Ge atom, which makes the energy difference between bonding and anti bonding state less at band edge. Chapter 9 deals with the nano-indentation studies on Ge15Te85-xSix (0 ≤ x ≤ 9) bulk glasses. The composition dependence of young’s modulus and hardness is studied systematically in this glassy system. The density of the samples of different compositions has also been measured, which strongly supports the variation of Young’s Modulus and hardness with composition. The composition dependence of mechanical properties of Ge-Te-Si samples has been understood on the basis of the presence of an intermediate phase and a thermally reversing window in this glassy system. A summary of the significant results obtained in the present thesis work is presented in the last chapter along with the scope for future work.

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