Graded InGaN buffers were employed to relax the strain arising from the lattice and thermal mismatch in GaN/InGaN epilayers grown on sapphire. An enhanced strain relaxation was observed in GaN grown on a stack of five InGaN layers, each 200 nm thick with the In content increased in each layer, and with an intermediate thin GaN layer, 10 nm thick inserted between the InGaN layers, as compared to the conventional two-step growth of GaN epilayer on sapphire. The function of the intermediate layer is to progressively relax the strain and to annihilate the dislocations that build up in the InGaN layer. If the InGaN layers were graded too rapidly, more dislocations will be generated. This increases the probability of the dislocations getting entangled and thereby impeding the motion of the dislocations to relax the strain in the InGaN layer. The optimum growth conditions of the intermediate layer play a major role in promoting the suppression and filling of the V-pits in the GaN cap layer, and were empirically found to be a thin 10 nm GaN grown at 750 0°C and annealed at 1000 0°C. / Singapore-MIT Alliance (SMA)

Graded InGaN buffers are employed to relax the strain arising from the lattice and thermal mismatches between GaN/InGaN epilayers grown on sapphire. The formation of V-pits in linearly graded InGaN/GaN bulk epilayers is illustrated. The V-pits were sampled using Atomic Force Microscopy and Scanning Electron Microscopy to examine their variation from the theoretical geometry shape. We discovered that the size of the V-pit opening in linearly graded InGaN, with and without GaN cap layer, has a Gaussian distribution. As such, we deduce that the V-pits are produced at different rates, as the growth of the InGaN layer progresses. In Stage I, the V-pits form at a slow rate at the beginning and then accelerate in Stage II when a critical thickness is reached before decelerating in Stage III after arriving at a mean size. It is possible to fill the V-pits by growing a GaN cap layer. It turns out that the filling of the V-pits is more effective at lower growth temperature of the GaN cap layer and the size of the V-pits opening, which is continued in to GaN cap layer, is not dependent on the GaN cap layer thickness. Furthermore, graded InGaN/GaN layers display better strain relaxation as compared to conventionally grown bulk GaN. By employing a specially design configuration, the V-pits can be eliminated from the InGaN epilayer. / Singapore-MIT Alliance (SMA)