Transparent conducting oxides (TCOs) have become an integral part of modern life through their essential role in touchscreen technology. The growing demand for cheap and superior transparent conducting layers, primarily driven by the smart phone market, has led to renewed efforts to develop novel TCOs. Currently, the most widely used material for transparent conducting applications is Sn-doped indium oxide (ITO), which has outstanding optical and electrical properties. This material is expensive though, due to the extensive use of In, and efforts to develop new low-cost transparent conducting oxides (TCO) have become increasingly important. Similarly attempts to reduce the cost of the fabrication and post-sintering steps used in making doped metal oxide thin films through innovative technologies have gained a lot of attention. With these points in mind, this research project has focused on the development of a novel low-cost aerosol assisted physical deposition method for TCO thin film fabrication and the development of new highly conducting materials to replace the expensive ITO for TCO applications. In this study, a new and simple aerosol assisted vapour deposition technique (i.e AACT) is developed to fabricate TCO films using TCO nanoparticle suspensions. Firstly, to test the validity of the method, ITO thin films are fabricated on float glass substrates from a nanoparticle suspension. The influence of the deposition parameters on the structural and opto-electronic properties of the thin films are investigated to understand the intricacies of the process. In order to investigate the fabrication of replacement materials for ITO, a range of doped zinc oxide powders are synthesised and processed using microwave radiation. Nominally, Al doped ZnO (AZO), Ga doped ZnO (GZO), Si doped ZnO (SZO), Cu doped ZnO (CZO) and Mn doped ZnO (MZO) singly doped ZnO powders are all investigated to determine the best metal dopants for transparent conducting ZnO. AZO and GZO pellets are found to present the best electrical conductivity for the singly doped microwave fabricated powders with values of 4.4 x 10-3 and 4.3 x 10-3 Ω.cm achieved reproducibly. In an effort to further improve the properties of ZnO, co-doping experiments, utilising the two best dopants from the previous work (i.e. Al and Ga) is investigated. ZnO structures that are co-doped with Al and Ga (AGZO) are found to exhibit significantly enhanced electrical properties than the singly doped powders. Typically, electrical conductivity value of 5.6 x 10-4 Ω.cm is obtained for AGZO pellets, which is an order of magnitude better than the previously fabricated materials. Finally, the best AZO, GZO and AGZO materials are utilised to fabricate thin films using the previously verified AACT technique. Further investigations into the opto-electrical properties of the resulting thin films is presented prior to the utilisation of the best films in a practical application. Transparent heaters are fabricated using the best AGZO thin films, which are capable of reaching a mean temperature of 132.3 °C after applying a voltage of 18 V for 10 min. This work highlights the potential for using highly conducting AGZO, particularly fabricated by the microwave synthesis route, as a potential alternative for ITO in a wide variety of applications. The research also highlights the advantages of using microwaves in the thermal processing of TCO materials which significantly reduces the energy impact of the production process.

This dissertation presents an investigation of the properties, especially the electrical properties, of doped ZnO films grown by plasma-assisted molecular beam epitaxy (MBE) under different conditions. The interest in investigating ZnO films is motivated by the potential of ZnO to replace the currently dominant ITO in industries as n-type transparent electrodes and the difficulty in achieving reliable and reproducible p-type ZnO. On the one hand, n-type ZnO heavily doped with Al or Ga (AZO or GZO) is the most promising to replace ITO due to the low cost, abundant material resources, non-toxicity , high conductivity, and high transparency. On the other hand, ZnO doped with a large-size-mismatched element of Sb (SZO) or co-doped with N and Te exhibits the possibility of achieving p-type ZnO. In this dissertation, the effects of MBE growth parameters on the properties of GZO have been investigated in detail. The ratio of oxygen to metal (Zn+Ga) was found to be critical in affecting the structural, electrical, and optical properties of GZO layers as revealed by x-ray diffraction (XRD), transmission electron microscopy (TEM), Hall measurement, photoluminescence (PL), and transmittance measurements. Highly conductive (~2×10-4 Ω-cm) and transparent GZO films (> 90% in the visible spectral range) were achieved by MBE under metal-rich conditions (reactive oxygen to incorporated Zn ratio < 1). The highly conductive and transparent GZO layers grown under optimized conditions were applied as p-side transparent electrodes in InGaN-LEDs, which exhibited many advantages over the traditional thin semi-transparent Ni/Au electrodes. The surface morphologies of GaN templates were demonstrated to be important in affecting the structural and electrical properties of GZO layers. In those highly conductive and transparent GZO layers with high-quality crystalline structures, studies revealed ionized impurity scattering being the dominant mechanism limiting the mobility in the temperature range of 15-330 K, while polar optical phonon scattering being the mechanism responsible for the temperature-dependence for T>150 K. The majority Sb ions were found to reside on Zn sites instead of O sites for lower Sb concentrations (~0.1 at.%), which can lead to a high electron concentration of above 1019 cm-3 along with a high electron mobility of 110 cm2/V-s at room temperature. The reduction in electron concentration and mobility for higher Sb concentrations (~1 at.%) was caused by the deterioration of the crystalline quality. ZnO co-doped with N and Te was also studied and the advantages of the co-doping technique and problems in achieving p-type conductivity are discussed.

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