Organic light-emitting diodes (OLEDs) are regarded as next-generation light sources. The enhancement of external quantum efficiency of OLEDs has been investigated widely. It is an effective method of improving the external quantum efficiency, which destroys the phenomenon of total internal reflection inside the OLEDs by attaching microlens array to the surface of the glass substrate of the OLEDs. In this thesis, a multi-level aspherical gapless microlens array was designed and manufactured, and it was applied to OLEDs. In contrast with a spherical microlens array, the multi-level aspherical gapless microlens array can achieve a form of high aspect ratio and high fill factor, and they can enhance the external quantum efficiency of OLEDs. At first, aspherical microlens arrays with different parameters, including shapes of curved surface, layouts and feature dimensions, were simulated by optical simulation software, FRED. The aspherical microlens arrays which were attached to an OLED were simulated with a ray tracing method. Then, an optimal geometry and layout were found out. After simulation, a film with multi-level aspherical microlens array was fabricated by a LIGA-like process, including lithography, electroforming, PDMS (Polydimethylsiloxane) micro-molding and UV (Ultraviolet) -cured techniques. The characteristic in this process was to use multi-lithography to fabricate a microlens array with multi-level and high aspect ratio. The shape of multi-level was similar to the design, and the process can achieve the advantage of batch manufacture. Finally, the films with different multi-level aspherical microlens array were attached to an OLED to measure the optical-electric properties. The measured results were compared with simulation and confirmed them.

abstract: High speed image sensors are used as a diagnostic tool to analyze high speed processes for industrial, automotive, defense and biomedical application. The high fame rate of these sensors, capture a series of images that enables the viewer to understand and analyze the high speed phenomena. However, the pixel readout circuits designed for these sensors with a high frame rate (100fps to 1 Mfps) have a very low fill factor which are less than 58%. For high speed operation, the exposure time is less and (or) the light intensity incident on the image sensor is less. This makes it difficult for the sensor to detect faint light signals and gives a lower limit on the signal levels being detected by the sensor. Moreover, the leakage paths in the pixel readout circuit also sets a limit on the signal level being detected. Therefore, the fill factor of the pixel should be maximized and the leakage currents in the readout circuits should be minimized. This thesis work presents the design of the pixel readout circuit suitable for high speed and low light imaging application. The circuit is an improvement to the 6T pixel readout architecture. The designed readout circuit minimizes the leakage currents in the circuit and detects light producing a signal level of 350µV at the cathode of the photodiode. A novel layout technique is used for the pixel, which improves the fill factor of the pixel to 64.625%. The read out circuit designed is an integral part of high speed image sensor, which is fabricated using a 0.18 µm CMOS technology with the die size of 3.1mm x 3.4 mm, the pixel size of 20µm x 20 µm, number of pixel of 96 x 96 and four 10-bit pipelined ADC’s. The image sensor achieves a high frame rate of 10508 fps and readout speed of 96 M pixels / sec. / Dissertation/Thesis / Masters Thesis Electrical Engineering 2016

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