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Estudo da reacao seletiva de abstracao do atomo de hidrogenio na radiolise e na fotolise de misturas de alcanos a 77 KGUEDES, SELMA M.L. 09 October 2014 (has links)
Made available in DSpace on 2014-10-09T12:30:12Z (GMT). No. of bitstreams: 0 / Made available in DSpace on 2014-10-09T14:04:11Z (GMT). No. of bitstreams: 1
00381.pdf: 1940550 bytes, checksum: 03c39e8c3721dff24ae588c477a32ece (MD5) / Dissertacao (Mestrado) / IEA/D / Instituto de Energia Atomica - IEA
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Estudo da reacao seletiva de abstracao do atomo de hidrogenio na radiolise e na fotolise de misturas de alcanos a 77 KGUEDES, SELMA M.L. 09 October 2014 (has links)
Made available in DSpace on 2014-10-09T12:30:12Z (GMT). No. of bitstreams: 0 / Made available in DSpace on 2014-10-09T14:04:11Z (GMT). No. of bitstreams: 1
00381.pdf: 1940550 bytes, checksum: 03c39e8c3721dff24ae588c477a32ece (MD5) / Dissertacao (Mestrado) / IEA/D / Instituto de Energia Atomica - IEA
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The temperature coefficient of the hydrogen isotope effectOnwood, D. P. January 1966 (has links)
No description available.
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Some aspects of the infra-red spectra of hydrogen-bonded systemsRobertson, G. N. v.d. H. January 1970 (has links)
No description available.
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The role of hydrogen peroxide in the hydrogen/oxygen reaction : the structure of a simple moleculeGreen, Michael January 1964 (has links)
No description available.
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Studies on molecular vibrational spectraSousa Lopes, M. C. January 1967 (has links)
No description available.
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Atomic reactions and the structure of the transition stateBowen, H. C. January 1965 (has links)
No description available.
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Studies in gastric secretionBannister, W. H. January 1964 (has links)
No description available.
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A study of Cev/c K+ mesh interactions in hydrogenSummer, D. J. January 1967 (has links)
No description available.
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Characterization of hydrogen and helium implanted silicon carbideO'Connell, Jacques Herman January 2009 (has links)
This dissertation focuses on the characterization of hydrogen implanted 3C-SiC and helium implanted 6H-SiC and the interaction of silver and palladium with the SiC. The main technique used for the analysis of the implanted SiC was transmission electron microscopy (TEM), although scanning electron microscopy (SEM) and nanoindentation hardness testing were also used. Both H and He implantations were done at an ion energy of 100 keV and the total dose for both species was 1017 ions/cm2. Specimens were annealed at 1000 °C for 20 min in an inert atmosphere. The observed depth of ion damage agreed closely with that predicted by TRIM 2008. The damaged region in the He implanted specimens had a high density of small bubbles but no cracks were observed. Severe cracking was observed along the damaged region in the H implanted specimens. A second phase hexagonal (4H-SiC) was detected in two grains in the 3C-SiC and some grown in voids were also observed. The wettability of SiC by a 2:1 by volume mixture of Ag and Pd is extremely low but is significantly increased through the addition of Si to the mixture. The Si containing metal mixture was found to migrate along the grain boundaries of polycrystalline 3CSiC while sealing the point of entry. Pd attacks SiC and severe etching was observed on the surface of 6H-SiC. An epitaxially orientated Pd2Si inclusion was observed in the 6H-SiC. No effect of implantation damage on the interaction of Pd and Ag with SiC was observed. Pd etched the surface of the He implanted 6H-SiC down through the damaged region with no evidence of implantation damage left after 67 hours of annealing and thus no conclusions could be drawn. The metal mixture interacted with the non implanted surface of the H implanted 3C-SiC after dissolving the Si substrate and therefore the effect of the ion damage on the interaction could not be investigated. Nanoindentation hardness measurements showed a marked increase in hardness of He implanted 6H-SiC annealed for 20 min at 1000 °C over that of as implanted and virgin material. There was also a large decrease in hardness corresponding to the depth of the ion damage.
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