In this thesis¡M As-grown and H-treated polycrystalline diamond film Metal-Insulator-Semiconductor Field-Effect-Transistor on the p-type surface semiconductive layers of undoped hydrogen-terminated CVD diamond films were successfully fabricated using a new fabrication process[1-2]. This new fabrication process of the polycrystalline diamond film MISFET exploits selected area deposition (SAD)[3] with Shadow Mask and indeed possesses low cost and less process¡Mso it was a best alternation for diamond device fabrication recently. Next, a modified equivalent circuit of the polycrystalline diamond film MISFET on the p-type surface semiconductive layers of undoped hydrogen-terminated CVD diamond films is also proposed, which consists of FET and the parasitic current conduction paths. The FET current path represents the currents flowed through the P-type conductive layer, and the parasitic current conductance paths represents the currents flowed through the barrier of metal/diamond and through both of the grain boundary and bulk diamond, respectively. In addition, the I-V characteristics of As-grown and H-treated polycrystalline diamond film MISFET has been successfully simulated by using this modified equivalent circuit. The simulation results show good agreements with the measurement. In addition, the I-V characteristics of As-grown polycrystalline diamond film MISFET, from measurement and simulation results, were great affected by the grain boundaries and bulk diamond crystallites, and their shape is similar to that of Schottky diode. Whereas, the effect of the bulk diamond crystallites and diamond grain boundaries was great decreased after hydrogen plasma treatment and the shape of the I-V characteristics is similar to that of Si-MISFET. This result is believed to have important impacts for the application of diamond device in the nearest future.

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