Thesis (M. Phil.)--University of Hong Kong, 2008. / Also available in print.

Thesis (M. Phil.)--University of Hong Kong, 2009. / Includes bibliographical references. Also available in print.

Thesis (Ph.D.)--Washington State University, August 2005. / Includes bibliographical references.

Thesis (Ph. D.)--University of Texas at Austin, 2007. / Vita. Includes bibliographical references.

Group III-nitride semiconductors possess unique properties, which make them versatile materials for suiting many applications. Structuring vertical and exceptionally smooth GaN profiles is crucial for efficient optical device operation. The processing requirements for laser devices and ridge waveguides are stringent as compared to LEDs and other electronic devices. Due to the strong bonding and chemically inert nature of GaN, dry etching becomes a critical fabrication step. The surface morphology and facet etch angle are analyzed using SEM and AFM measurements. The influence of different mask materials is also studied including Ni as well as a SiO2 and resist bilayer. The high selectivity Ni Mask is found to produce high sidewall angles ~79°. Processing parameters are optimized for both the mask material and GaN in order to achieve a highly anisotropic, smooth profile, without resorting to additional surface treatment steps. An optimizing a SF6/O2 plasma etch process resulted in smooth SiO2 mask sidewalls. The etch rate and GaN surface roughness dependence on the RF power was also examined. Under a low 2mTorr pressure, the RF and ICP power were optimized to 150W and 300W respectively, such that a smooth GaN morphology and sidewalls was achieved with reduced ion damage. The The AFM measurements of the etched GaN surface indicate a low RMS roughness ranging from 4.75 nm to 7.66 nm.

Thesis (M.S.)--Brigham Young University. Dept. of Chemistry and Biochemistry, 2004. / Includes bibliographical references.

Thesis (M.Sc.) - Carleton University, 2006. / Includes bibliographical references (p. 85-86). Also available in electronic format on the Internet.

published_or_final_version / Chemistry / Master / Master of Philosophy

published_or_final_version / abstract / Chemistry / Doctoral / Doctor of Philosophy

Inductively Coupled Plasma (ICP) facilities create high enthalpy ows to recreate atmospheric entry conditions. Although no condition has been duplicated exactly in a ground test facility, it is important to characterize the condition to understand how close a facility can come to doing so. An ICP facility was constructed at the University of Vermont for aerospace material testing in 2010. The current setup can operate using air, carbon dioxide, nitrogen, and argon to test samples in a chamber. In this work we investigate di erent ways to increase measured heat ux and expand our facility to operate supersonically. To do so, a water cooled injection system was designed to overcome failure points of the prior system. An investigation of heat ux methods that provide a baseline for the facility were also examined and tested. A nozzle con guration was also developed with an overall goal of increasing the plasma ow to reach sonic and supersonic velocities, allowing it to be compared with the existing subsonic system. An iterative approach was taken to develop a nozzle design that is robust enough to handle the harsh environment, yet adaptable to the pre-existing facility components. The current design uses interchangeable sonic and supersonic nozzles which also allow for appropriate plasma gas expansion. Data are taken through retractable and goose-neck probe sample holders during testing. Heat ux can be determined by use of a Gardon gage, slug calorimeter, and water cooled calorimeter. Total and static pressure are determined from a pitot tube and pressure tap, which are then manipulated into a velocity measurement. A comparison between subsonic and supersonic operation is then made with these data. Existing literature uses correlations between jet diameter and velocity gradients to determine the e ective heat ux. This investigation found that the experimental and theoretical heat ux results scale correctly according to the correlations.