The thesis describes the construction of a CVD system, the deposition of thin molybdenum disulphide layers using this system and the analysis of the samples produced. The deposition of thin molybdenum disulphide layers and an intercalation of the silicon carbide substrate used were demonstrated and the measurement results obtained by atomic force microscopy, Raman spectroscopy and photoelectron spectroscopy were further discussed.:1. Introduction: Two-Dimensional Materials 2. Experimental Methods 2.1. Atomic Force Microscopy 2.2. Photoelectron Spectroscopy 2.2.1. Layer Thickness Determination 2.2.2. Quantitative Surface Analysis 3. Structure, Properties and Synthesis of the Used Materials 3.1. Transition Metal Dichalcogenides 3.1.1. Molybdenum Disulfide 3.1.2. Synthesis of Thin MoS Films-State of the Art 3.2. Substrate-Graphene on SiC 3.2.1. Graphene 3.2.2. Epitaxial Graphene on Silicon Carbide 4. Development of a CVD System for the Growth of MoS2 films 4.1. Basic Principles of Chemical Vapor Deposition 4.2. Construction of the CVD System 4.3. Temperature Measurements 4.4. Preliminary Considerations for the CVD Process 5. Growth Characteristics 5.1. Chemical Composition of the Substrate 5.2. Chemical Composition of the Grown MoS Films 5.3. Layer Thickness of the Grown MoS Films 5.3.1. Determination with XPS 5.3.2. Determination with Raman 5.4. AFM Measurements 6. Conclusion