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This thesis presents the development of high resolution, wide dynamic range sigma-delta type readout circuits for capacitive MEMS accelerometers. Designed readout circuit employs fully differential closed loop structure with digital output, achieving high oversampling ratio and high resolution. The simulations of the readout circuit together with the accelerometer sensor are performed using the models constructed in Cadence and Matlab Simulink environments. The simulations verified the stability and proper operation of the accelerometer system. The sigma-delta readout circuit is implemented using XFab 0.6 &micro / m CMOS process. Readout circuit is combined with Silicon-On-Glass (SOG) and Dissolved Wafer Process (DWP) accelerometers. Both open loop and closed loop tests of the accelerometer system are performed. Open loop test results showed high sensitivity up to 8.1 V/g and low noise level of 4.8 &micro / g/&amp / #61654 / Hz. Closed loop circuit is implemented on a PCB together with the external filtering and decimation electronics, providing 16-bit digital output at 800 Hz sampling rate. High acceleration tests showed &plusmn / 18.5 g of linear acceleration range with high linearity, using DWP accelerometers. The noise tests in closed loop mode are performed using Allan variance technique, by acquiring the digital data. Allan variance tests provided 86 &micro / g/&amp / #61654 / Hz of noise level and 74 &micro / g of bias drift. Temperature sensitivity tests of the readout circuit in closed loop mode is also performed, which resulted in 44 mg/&ordm / C of temperature dependency. Two different types of new adaptive sigma-delta readout circuits are designed in order to improve the resolution of the systems by higher frequency operation. The two circuits both change the acceleration range of operation of the system, according to the level of acceleration. One of the adaptive circuits uses variation of feedback time, while the other circuit uses multi-bit feedback method. The simulation results showed micro-g level noise in closed loop mode without the addition of the mechanical noise of the sensor.

MEMS accelerometers are quickly approaching navigation grade performance and navigation market for MEMS accelerometer systems are expected to grow in the recent years. Compared to conventional accelerometers, these micromachined sensors are smaller and more durable but are generally worse in terms of noise and dynamic range performance. Since MEMS accelerometers are already dominant in the tactical and consumer electronics market, as they are in all modern smart phones today, there is significant demand for MEMS accelerometers that can reach navigation grade performance without significantly altering the developed process technologies. This research aims to improve the performance of previously fabricated and well-known MEMS capacitive closed loop &Sigma / &Delta / accelerometer systems to navigation grade performance levels. This goal will be achieved by reducing accelerometer noise level through significant changes in the system architecture and implementation of a new electronic interface readout ASIC. A flexible fourth order &Sigma / &Delta / modulator was chosen as the implementation of the electro-mechanical closed loop system, and the burden of noise shaping in the modulator was shifted from the mechanical sensor to the programmable electronic readout. A novel operational transconductance amplifier (OTA) was also designed for circuit implementation of the electronic interface readout. Design and fabrication of the readout was done in a standard 0.35 &micro / m CMOS technology. With the newly designed and fabricated readout, single-axis accelerometers were implemented and tested for performance levels in 1g range. The implemented system achieves 5.95 &micro / g/sqrt Hz, 6.4 &micro / g bias drift, 131.7 dB dynamic range and up to 37.2 g full scale range with previously fabricated dissolved epitaxial wafer process (DEWP) accelerometers in METU MEMS facilities. Compared to a previous implementation with the same accelerometer element reporting 153 &micro / g/sqrtHz, 50 &micro / g bias drift, 106.8 dB dynamic range and 33.5 g full scale range / this research reports a 25 fold improvement in noise, 24 dB improvement in dynamic range and removal of the deadzone region.

Recently, there has been an increasing interest in the electronics world for those aspects related to semiconducting gas sensor (SGS) materials. In view of the increasingly strict legal limits for pollutant gas emissions, there is a great interest in developing high performance gas sensors for applications such as controlling air pollution and exhaust gases in automotive industry. In this way, semiconductor gas sensors offer good advantages with respect to other gas sensor devices, due to their simple implementation, low cost and good stability and sensitivity. The first part of the thesis is dedicated to the synthesis, film structural and sensitivity study of the Tin Oxide film deposited by RF sputtering, doped with noble metal Palladium (Pd). Effects on the Gas Sensitivity due to the deposition parameters like thickness of the film, Substrate temperature, Ar /O2 ratio of the sputtering environment, annealing temperature and duration and doping metal weight % into the Tin Oxide films are studied and the results are shown in detail. The sensitivity and selectivity of the gas sensing film is decided by the operating temperature i.e. the temperature of the gas sensing film while it is in the target gas ambience, Microheaters happen to be the very important component in the gas sensor especially with wide band gap semiconducting metal oxides films such as tin oxide, gallium oxide or indium oxides. Other than gas sensing microheater also finds applications in many areas like thermal dip pen nanolithography, polymerase chain reaction (PCR), fluid pumping with bubbles, in vitro fertilization etc. So in this report due importance was given for the design and fabrication of the microheater. Microheaters are the most power consuming element of the integrated Gas sensors. This is also an important reason for the extensive microheater work in this research. Six different heater patterns were simulated by considering low power and temperature uniformity as an important goals. Among them the best three patterns named Double spiral, “Fan” Shape and “S” shape were chosen for fabrication and both thermal and electrical characterization results of them were presented in detail in the Microheater section of the thesis. It is believed that the intelligent design and integration of the electronic circuitry (for drive, signal conditioning/compensation, and read-out) with the gas sensing element can mitigate some of the significant issues inherent in solid-state gas sensors, such as strong temperature and humidity dependence, signal drift, aging, poisoning, and weak selectivity. The sensitivity of the gas sensors which has been indicated as the dynamic change of resistance in wide range should be read out properly. Towards this aim a low cast high efficient readout circuit is designed and implemented. Temperature monitoring and controlling is a key phenomenon in the metal Oxide based gas sensors since the selectivity mainly depends on the operating temperature of the sensing film. So focus was also shown on the design and implementation of the temperature monitoring and control unit, which been presented in the last part of this thesis.