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  • About
  • The Global ETD Search service is a free service for researchers to find electronic theses and dissertations. This service is provided by the Networked Digital Library of Theses and Dissertations.
    Our metadata is collected from universities around the world. If you manage a university/consortium/country archive and want to be added, details can be found on the NDLTD website.
1

Annealing Effects on the Band Alignment of ALD SiO2 on (Inx Ga1−x )2 O3 for x = 0.25–0.74

Fares, Chaker, Xian, Minghan, Smith, David J., McCartney, M.R., Kneiß, Max, von Wenckstern, Holger, Grundmann, Marius, Tadjer, Marko, Ren, Fan, Pearton, S.J. 28 April 2023 (has links)
The band alignment of Atomic Layer Deposited SiO 2 on (In x Ga1−x) 2 O 3 at varying indium concentrations is reported before and after annealing at 450 °C and 600 °C to simulate potential processing steps during device fabrication and to determine the thermal stability of MOS structures in high-temperature applications. At all indium concentrations studied, the valence band offsets (VBO) showed a nearly constant decrease as a result of 450 °C annealing. The decrease in VBO was −0.35 eV for (In0.25Ga 0.75) 2 O 3 , −0.45 eV for (In0.42Ga 0.58) 2 O 3 , −0.40 eV for (In0.60Ga 0.40) 2 O 3 , and −0.35 eV (In0.74 Ga0.26) 2 O 3 for 450 °C annealing. After annealing at 600 °C, the band alignment remained stable, with <0.1 eV changes for all structures examined, compared to the offsets after the 450 °C anneal. The band offset shifts after annealing are likely due to changes in bonding at the heterointerface. Even after annealing up to 600 °C, the band alignment remains type I (nested gap) for all indium compositions of (In x Ga1−x ) 2 O 3 studied.

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