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  • About
  • The Global ETD Search service is a free service for researchers to find electronic theses and dissertations. This service is provided by the Networked Digital Library of Theses and Dissertations.
    Our metadata is collected from universities around the world. If you manage a university/consortium/country archive and want to be added, details can be found on the NDLTD website.
41

Optical and electrical properties of ion beam modified materials

Amolo, George Odhiambo 18 August 2008 (has links)
Abstract will not load on to DSpace
42

Formation and characterization of high dose ion implanted thin layers of metal clusters embedded in silica glass.

January 2001 (has links)
by Chung Pui Shan. / Thesis (M.Phil.)--Chinese University of Hong Kong, 2001. / Includes bibliographical references (leaves 105-110). / Abstracts in English and Chinese. / Abstract --- p.i / Acknowledgements --- p.iii / Table of contents --- p.v / Chapter Chapter 1. --- Introduction --- p.1 / Chapter 1.1 --- Metal clusters embedded in fused silica glass --- p.2 / Chapter 1.2 --- Ion implantation of metal clusters --- p.3 / Chapter 1.3 --- Feature of MEVVA implantation --- p.5 / Chapter 1.4 --- Motivation and organization of this thesis --- p.7 / Chapter Chapter 2. --- Sample Preparation and Characterization Methods / Chapter 2.1 --- MEVVA implantation --- p.9 / Chapter 2.2 --- TRIM simulation --- p.11 / Chapter 2.3 --- Sample preparation --- p.14 / Chapter 2.4 --- Rutherford backscattering spectroscopy (RBS) --- p.16 / Chapter 2.5 --- X-ray diffraction (XRD) technique --- p.17 / Chapter 2.6 --- X-ray photoelectron spectroscopy (XPS) --- p.21 / Chapter 2.7 --- Transmission electron microscopy (TEM) technique --- p.24 / Chapter 2.8 --- Spectroscopic ellipsometry (S.E.) --- p.25 / Chapter 2.9 --- Z-scan technique --- p.32 / Chapter Chapter 3. --- Characterization of Single Implanted Samples / Chapter 3.1 --- Experimental results and discussion / Chapter 3.1.1 --- RBS --- p.35 / Chapter 3.1.2 --- XRD --- p.38 / Chapter 3.1.3 --- XPS --- p.42 / Chapter 3.1.4 --- XTEM --- p.49 / Chapter 3.1.5 --- S.E --- p.54 / Chapter 3.1.6 --- Z-scan measurements --- p.60 / Chapter 3.2 --- Summary --- p.65 / Chapter Chapter 4. --- Characterization of Sequentially Cu-Ni Implanted Samples / Chapter 4.1 --- Experimental results and discussion / Chapter 4.1.1 --- XRD --- p.66 / Chapter 4.1.2 --- XPS --- p.68 / Chapter 4.1.3 --- XTEM --- p.77 / Chapter 4.1.4 --- Z-scan measurements --- p.87 / Chapter 4.2 --- Summary --- p.91 / Chapter Chapter 5. --- Conclusion and Future Works / Chapter 5.1 --- Conclusion --- p.92 / Chapter 5.2 --- Future works --- p.93 / Appendix / Appendix I --- p.94 / Chapter ☆ --- Sample preparation procedures for XTEM / Appendix II --- p.97 / Chapter ☆ --- Alignment procedures of S.E. / Chapter ☆ --- Implementation of the Merlin system / Appendix III --- p.101 / Chapter ☆ --- Calibration of S.E. / Reference --- p.105
43

Phase and microstructure of FeSi₂ thin films. / 硅化鐵薄膜的相和微觀結構 / Phase and microstructure of FeSi₂ thin films. / Gui hua tie bo mo de xiang he wei guan jie gou

January 2006 (has links)
Chong Yuen Tung = 硅化鐵薄膜的相和微觀結構 / 莊宛曈. / Thesis (M.Phil.)--Chinese University of Hong Kong, 2006. / Includes bibliographical references (leaves 63-65). / Text in English; abstracts in English and Chinese. / Chong Yuen Tung = Gui hua tie bo mo de xiang he wei guan jie gou / Zhuang Wantong. / Abstract --- p.i / 摘要 --- p.ii / Acknowledgment --- p.iii / Table of contents --- p.iv / List of Figures --- p.viii / List of Tables --- p.x / Chapter CHAPTER 1: --- Introduction --- p.1 / Chapter CHAPTER 2: --- Background --- p.4 / Chapter 2.1 --- Phases of crystalline FeSi2 --- p.4 / Chapter 2.2 --- Electronic structure of β-FeSi2 --- p.7 / Chapter 2.3 --- Orientation relationship between β-FeSi2 and Si --- p.8 / Chapter CHAPTER 3: --- Instrumentation --- p.10 / Chapter 3.1 --- Metal vapor vacuum arc ion source implantation --- p.10 / Chapter 3.2 --- Rutherford backscattering --- p.12 / Chapter 3.3 --- Transmission Electron Microscopy (TEM) --- p.13 / Chapter 3.3.1 --- Principles of TEM --- p.13 / Chapter 3.3.2 --- Electron specimen interaction and contrast --- p.14 / Chapter 3.3.3 --- Electron Diffraction --- p.15 / Chapter 3.3.4 --- Sample Preparation --- p.17 / Chapter 3.3.4.1 --- Plan-view sample --- p.17 / Chapter 3.3.4.2 --- Cross-section sample --- p.17 / Chapter CHAPTER 4: --- FeSi2 films fabricated by ion implantation --- p.18 / Chapter 4.1 --- Introduction --- p.18 / Chapter 4.2 --- Experimental details --- p.18 / Chapter 4.3 --- Ion energy series --- p.19 / Chapter 4.3.1 --- As-implanted sample --- p.19 / Chapter 4.3.1.1 --- Results --- p.20 / Chapter 4.3.1.2 --- Discussions --- p.20 / Chapter 4.3.2 --- Annealed samples --- p.24 / Chapter 4.3.2.1 --- Morphology of the annealed samples and the damage on Si substrate --- p.24 / Chapter 4.3.2.2 --- Identification of the FeSi2 phase and their orientation relationship with the Si matrix --- p.24 / Chapter 4.3.2.3 --- Photoluminescence of the samples --- p.26 / Chapter 4.3.2.4 --- Discussions --- p.26 / Chapter 4.4 --- Ion dosage series --- p.31 / Chapter 4.4.1 --- Results --- p.31 / Chapter 4.4.2 --- Discussions --- p.32 / Chapter 4.5 --- Summary --- p.36 / Chapter CHAPTER 5: --- Effect of post annealing on the phase and microstructure of FeSi2 --- p.37 / Chapter 5.1 --- Introduction --- p.37 / Chapter 5.2 --- Experimental details --- p.37 / Chapter 5.3 --- The correlation between microstructure of FeSi2 synthesized under different annealing conditions and their PL --- p.38 / Chapter 5.3.1 --- RTA series --- p.38 / Chapter 5.3.1.1 --- Results --- p.38 / Chapter 5.3.1.2 --- Discussions --- p.39 / Chapter 5.3.2 --- FA series --- p.42 / Chapter 5.3.2.1 --- Results --- p.42 / Chapter 5.3.2.2 --- Discussions --- p.44 / Chapter 5.3.3 --- RTAFA series --- p.45 / Chapter 5.3.3.1 --- Results --- p.45 / Chapter 5.3.3.2 --- Discussions --- p.45 / Chapter 5.4 --- The existence of alpha phase and its special shape --- p.51 / Chapter 5.4.1 --- Results --- p.51 / Chapter 5.4.2 --- Discussions --- p.52 / Chapter 5.5 --- The existence of gamma phase in 1050°C furnace annealed sample / Chapter 5.5.1 --- Results --- p.56 / Chapter 5.5.2 --- Discussions --- p.57 / Chapter 5.6 --- Summary --- p.59 / Chapter CHAPTER 6: --- Conclusions --- p.61 / References --- p.63
44

An x-ray double crystal spectrometer study of Ar- and Rb-implanted MgO crystals

Sneeringer, Basil Lee January 2011 (has links)
Digitized by Kansas Correctional Industries
45

Resonance Raman scattering and optical reflectivity studies of ion implantation-produced damage in cuprous oxide

Hesse, Joseph Fredrick January 2011 (has links)
Typescript. / Digitized by Kansas Correctional Industries
46

Formation and characterization of SiC/Si heterostructures by MEVVA implantation. / CUHK electronic theses & dissertations collection

January 1999 (has links)
by Chen Dihu. / "November 1999." / Thesis (Ph.D.)--Chinese University of Hong Kong, 1999. / Includes bibliographical references (p. 160-173). / Electronic reproduction. Hong Kong : Chinese University of Hong Kong, [2012] System requirements: Adobe Acrobat Reader. Available via World Wide Web. / Mode of access: World Wide Web. / Abstracts in English and Chinese.
47

Structural and field emission properties of ion beam synthesized metal-dielectric nano-composite thin films.

January 2007 (has links)
Yuen, Ying Kit. / Thesis (M.Phil.)--Chinese University of Hong Kong, 2007. / Includes bibliographical references (leaves 90-96). / Abstracts in English and Chinese. / Chapter Chapter 1 --- Introduction / Chapter 1.1 --- Introduction to Electron Field Emission --- p.1 / Chapter 1.2 --- Theory of Electron Field Emission --- p.4 / Chapter 1.3 --- Fowler Nordheim Model for Electron Field Emission in Metals --- p.5 / Chapter 1.4 --- Factors Affecting the Field Emission Properties --- p.7 / Chapter 1.4.1 --- Surface Morphology --- p.7 / Chapter 1.4.2 --- Electrical Inhomogeneity --- p.7 / Chapter 1.5 --- Goal of this Project --- p.9 / Chapter Chapter 2 --- Sample Preparation and Characterization Methods / Chapter 2.1 --- Sample Preparation --- p.11 / Chapter 2.1.1 --- MEVVA Ion Implantation System --- p.13 / Chapter 2.1.2 --- TRIM Simulation --- p.17 / Chapter 2.1.3 --- Implantation Conditions --- p.19 / Chapter 2.2 --- Characterization Methods --- p.21 / Chapter 2.2.1 --- AFM - Atomic Force Microscopy --- p.21 / Chapter 2.2.2 --- C-AFM ´ؤ Conducting Atomic Force Microscopy --- p.23 / Chapter 2.2.3 --- RBS - Rutherford Backscattering Spectrometry --- p.23 / Chapter 2.2.4 --- TEM - Transmission Electron Microscopy --- p.26 / Chapter 2.2.5 --- Field Emission Measurement --- p.27 / Chapter Chapter 3 --- Field Emission Properties of Co-Si02 / Chapter 3.1 --- Introduction --- p.29 / Chapter 3.2 --- RBS results --- p.30 / Chapter 3.3 --- Experimental results of as-implanted Co-SiO2 samples --- p.32 / Chapter 3.3.1 --- AFM and results --- p.32 / Chapter 3.3.2 --- Field emission properties of as-implanted Co-Si02 --- p.35 / Chapter 3.4 --- Step-like and jump-like features in the J-E plots --- p.39 / Chapter 3.5 --- Chapter Summary --- p.43 / Chapter Chapter 4 --- Field Emission Properties of Fe-SiO2 / Chapter 4.1 --- Introduction --- p.45 / Chapter 4.2 --- RBS results --- p.46 / Chapter 4.3 --- Experimental results of as-implanted Fe-SiO2 samples --- p.48 / Chapter 4.3.1 --- AFM and results --- p.48 / Chapter 4.3.2 --- Field emission properties of as-implanted Fe-SiO2 --- p.51 / Chapter 4.3.3 --- Comparison with as-implanted Co-SiO2 --- p.54 / Chapter 4.4 --- Experimental results of annealed Fe-SiO2 samples --- p.57 / Chapter 4.4.1 --- Annealing conditions --- p.57 / Chapter 4.4.2 --- AFM and C-AFM results --- p.57 / Chapter 4.4.3 --- TEM Images --- p.62 / Chapter 4.4.4 --- Field emission properties of annealed Fe-SiO2 --- p.68 / Chapter 4.5 --- Step-like and jump-like features in the J-E plots --- p.81 / Chapter 4.6 --- Field Emission Images --- p.84 / Chapter 4.7 --- Chapter Summary --- p.85 / Chapter Chapter 5 --- Conclusion & Future Plan --- p.87 / Reference --- p.90 / Appendix / Chapter A. --- Derivation of the Fowler Nordheim Equation --- p.97
48

Plasma Surface Modification of Biomedical Polymers and Metals

Ho, Joan Pui Yee January 2007 (has links)
Doctor of Philosophy(PhD) / Biomedical materials are being extensively researched, and many different types such as metals, metal alloys, and polymers are being used. Currently used biomedical materials are not perfect in terms of corrosion resistance, biocompatibility, and surface properties. It is not easy to fabricate from scratch new materials that can fulfill all requirements and an alternative approach is to modify the surface properties of current materials to cater to the requirements. Plasma immersion ion implantation (PIII) is an effective and economical surface treatment technique and that can be used to enhance the surface properties of biomaterials. The unique advantage of plasma modification is that the surface properties and functionalities can be enhanced selectively while the favorable bulk attributes of the materials such as strength remain unchanged. In addition, the non-line of sight feature of PIII is appropriate for biomedical devices with complex geometries such as orthopedic implants. However, care must be exercised during the plasma treatment because low-temperature treatment is necessary for heat-sensitive materials such as polymers which typically have a low melting point and glass transition temperature. Two kinds of biomedical materials will be discussed in this thesis. One is nickel titanium (NiTi) alloy which is a promising orthopedic implant material due to its unique shape memory and superelastic properties. However, harmful ions may diffuse from the surface causing safety hazards. In this study, we investigate the properties and performance of NiTi after nitrogen and oxygen PIII in terms of the chemical composition, corrosion resistance, and biocompatibility. The XPS results show that barrier layers mainly containing TiN and TiOx are produced after nitrogen and oxygen PIII, respectively. Based on the simulated in vitro and electrochemical corrosion tests, greatly reduced ion leaching and improved corrosion resistance are accomplished by PIII. Porous NiTi is also studied because the porous structure possesses better bone ingrowth capability and compatible elastic modulus with human bones. These advantages promote better recovery in patients. However, higher risks of Ni leaching are expected due to the increased exposed surface area and rougher topography than dense and smooth finished NiTi. We successfully apply PIII to porous NiTi and in vitro tests confirm good cytocompatibility of the materials. The other type of biomedical materials studied here is ultra-high molecular weight polyethylene (UHMWPE) which is a potential material for use in immunoassay plates and biosensors. In these applications, active antibodies or enzymes attached to a surface to detect molecules of interests by means of specific interactions are required. Moreover, the retention of enzyme activity is crucial in these applications. Therefore, the aim of this study is to investigate the use of PIII to prepare UHMWPE surfaces for binding of active proteins in terms of the binding density and ‘shelf life’ of the treated surfaces. Argon and nitrogen PIII treatments are attempted to modify the surface of UHMWPE. Horseradish peroxidase (HRP) is selected to conduct the protein binding test since it is a convenient protein to assay. Experimental results show that both PIII treated surfaces significantly improve the density of active HRP bound to the surface after incubation in buffer containing HRP. Furthermore, the PIII treated surfaces are found to perform better than a commercially available protein binding surface and the shelf life of the PIII treated surfaces under ambient conditions is at least six months. In conclusion, a biocompatible barrier layer on NiTi and a protein binding surface on UHMWPE is synthesized by PIII. The surface properties such as corrosion resistance and functionality on these two different types of substrates are improved by PIII.
49

Study of Self-assembled Gold Nanocluster Patterns in Ion Implanted Silicon: Order from Disorder

Venkatachalam, Dinesh Kumar, Dinesh.Venkatachalam@anu.edu.au January 2008 (has links)
Gold (Au) implantation in silicon (Si) has been a topic of great interest from both fundamental and applied perspectives. Ion implantation is a versatile technique due to its ability to form surface-embedded nanoparticles that provide better adhesion. Also, being an integral part of the substrate lattice, the nanoclusters produced by ion implantation are free from impurities and their size distribution can be controlled by carefully optimizing the beam parameters. During our experiments to produce nanoclusters of Au on Si for use as seeds for the growth of nanowires, we stumbled across an unusual pattern formation process under specific conditions. This unique self-assembly process is observed only within a critical threshold implantation fluence and above a threshold annealing temperature. Fabrication of ordered arrays of metal nanoparticles on Si substrates is of significance for both fundamental science associated with low-dimensional physics and technical app lications. The application of functional nanostructures strongly depends on their assembly in ordered one- or two- dimensional arrangements. These arrangements may play an important role in fabricating ordered arrays of semiconductor/oxide nanowires.This thesis discusses a systematic study performed to understand the temperature and time dependent nucleation, growth of Au nanoclusters and evolution of the self-assembled patterns. A growth model is proposed to show the re-crystallization behaviour of Au supersaturated amorphous silicon (a-Si) on Si substrate. The observed self-assembled periodic patterns of Au nanoclusters bear resemblance to the Liesegang ring structures prevalent in some chemical reaction-diffusion systems. Based on this systematic study of the growth and morphology of Au nanoclusters, a tentative growth mechanism has been proposed for the formation mechanism of this unusual self-assembled pattern. The pattern formation of this non-equilibrium process is expected to originate due to instabilities of the three scales of Au nanoclusters at elevated temperatures. The kinetics of pattern formation from a supersaturated solid solution (a-Si/Au alloy) is demonstrated using numerical solutions obtained by a two-dimensional growth model, which takes into account the nucleation, diffusion and the aggregation process. The numerical solution of the diffusion equations appear to be in good agreement with the experimental results.
50

Investigation of defects formed by ion implantation of H₂+ into silicon /

Whiting, Patrick. January 2009 (has links)
Thesis (M.S.)--Rochester Institute of Technology, 2009. / Typescript. Includes bibliographical references (leaves 116-117).

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