Indium Tin Oxide (ITO) Films (1800¡Ó100Å) were deposited onto the glass substrate by RF reactive magnetron sputtering method at room temperature. The electrical properties and optical properties measured before and after post-annealing of different temperature in vacuum. The sheet resistance of ITO Films which deposited at room temperature was about 36.8£[/¡¼, and we could obtain high conductive 14.7£[/¡¼ using the conduction of vacuum post-annealing at the temperature of 250¢XC. The X-ray diffraction (XRD) data show polycrystalline films after post-annealing with grain orientations predominantly along (222) and (400) directions depend on temperature. Atomic force microscope (AFM) and scanning electron microscopy (SEM) show the analysis of surface roughness and surface structure. The transparent was above 80% before and after post-annealing. The refractive index vary from 2.05 to 1.87 by using Ellipsometer.

Indium Tin Oxide (ITO) films were deposited onto the flexible substrate as the conductive electrode of the flexible display. ITO films were deposited by RF reactive magnetron sputtering. We changed process conditions, such as RF power, process pressure and substrate temperature to get good optical and electrical properties. ITO films with good electrical and optical properties have been obtained. The sheet resistance of the ITO films (150nm) was below 30 £[/¡¼ under low temperature and low power process condition. The (211)¡B(400)¡B(440) peaks were observed from the XRD profiles. The UV-visible spectra indicate that the average optical transmittance of ITO films is around 80% in the visible range. The surface roughness of the ITO films is also good.

ITO/Si heterojunction solar cells fabricated by post annealing of ITO films were presented. The cells were obtained by first depositing ITO films at room temperature by rf magnetron sputter technique. The as-deposited film is amorphous and its sheet as low as 35 £[/¡¼ was obtained. The sheet resistance by post annealing the sample in vacuum at 300¢J 20min. reduced to 9.7 £[/¡¼. The diffraction peaks on (222) and (400) directions were observed by XRD analysis. In addition, the carrier concentration is increased from 3¡Ñ1020 cm-3 to 9¡Ñ1020cm-3. The average transmittance is 82% after annealing. The ideality factor of the heterojunction diode is 1.93. We believed that the performance of the ITO/Si cells is limited due to large series resistance and carrier recombination at interface.

ABSTRACT High quality ZnS0.06Se0.94 epilayer which was lattice-matched to GaAs substrate has been prepared. The sulfur composition x was 0.06 has been determined by EPMA. The FWHM of X-ray diffraction was 187.2 arcsec. Its R-value was 5.191%. High quality ZnS0.06Se0.94:N epilayer which was lattice-matched to GaAs substrate has been prepared. The FWHM of X-ray diffraction was 169.2 arcsec. Its R-value was 3.521%. ITO film formed by thermal evaporated In-Sn alloy first, then annealing in O2 atmosphere. The conductivity and transparency of ITO have been trade-off at acceptable parameter. Because of the highest current in I-V characteristic in the structure of ITO/ZnS0.06Se0.94:N, we optimized the annealing temperature and time at 450¢J for 60min in O2 atmosphere. Because of the excellent transparency and conductivity in the structure of ITO/Glass, we optimized the annealing temperature and time at 650¢J for 60min in O2 atmosphere. The requirements for an excellent ohmic contact for ZnSe-based blue LED are: (1) transparent (2) low contact resistance (3) good for bonding (4) low melting point. For (1), Tin-doped indium oxide (ITO) is the only good choice. In this study, ITO/ZnS0.06Se0.94:Cl/ZnSe/ZnS0.06Se0.94:N/GaAs:Zn/Au-Zn double heterojunction (DH) structure has been prepared after annealing In-Sn/ZnS0.06Se0.94:Cl/ZnSe/ZnS0.06Se0.94:N/GaAs:Zn/Au-Zn in O2 atmosphere. I-V characteristic of DH junction structure shows a diode electric property.

No description available.

A thin film deposition system using ultrasonic atomization is designed and constructed. The coatings have been produced by pyrolysis using a solution of indium chloride in deionized water. Solution containing precursors is transported by carrying gas to the heated substrate where deposition is accomplished. In this study sample series obtained with of varying process parameters such as the flow rate of carrying gas, the tin concentration, and substrate temperature. The electrical properties of indium oxide thin film was improved using SnCl4¡E5H2O as a dopant. The effects of doping in crystalline, surface morphology, optical transmittance and electrical conductivity of the deposition thin films were examined and the best optimal percentage of doping for the transmittance and electrical properties were found. Weak diffraction peaks of crystalline indium oxide were observed in XRD pattern of the thin films deposition at 250¢J. The grains size of crystalline thin films grows with increasing substrate temperature. There is no change in XRD spectra between undoped and tin-doped indium oxide obtained with the same deposition temperature. The resistivity of thin films decreased greatly when dopant atom was added. The electrical resistivity of undoped indium oxide is ~10-2£[-cm, while that of ITO films reaches a minimum of 9.54¡Ñ10-4£[-cm when doping is in the range 2~ 6%.The UV-Visible spectra indicate that the optical transmittance of all films is between 75~88%. The transmittance was not strongly affected by doping concentration.

<p>Nowadays, information technology outsourcing (ITO) represents an established business practice in which a considerable number of companies are involved. Since the success of ITO is highly dependent on the exposure to ITO risks, studying the very risks is of great importance. The aim of this thesis consists in revealing the occurrence of specific ITO risks: supplier lock-in, hidden costs and the loss of control over outsourced IT. Further aims of this work are the revelation of measures which can be taken in order to face these risks and of the influences these risks have on backsourcing considerations. The first part of this thesis constitutes the theoretical framework which is based on the review of relevant literature. Within this part of the work, transaction cost theory and resource-based theory are presented and applied for the discussion of the specific ITO risks under consideration. Furthermore, a multidimensional approach is utilized in order to illustrate the various dimensions of ITO. By this means, the identification of situations in which the ITO risks under consideration appear is enabled. The empirical part of this exploratory research is based on a multiple case study. The data necessary for this qualitative research was gathered from telephone interviews conducted with both ITO clients and IT suppliers. The results of this study indicate that the ITO risks under consideration all pose considerable threats to ITO operations and that there are both internal and external measures ITO companies can take in order to face these risks. Furthermore, the risks under discussion influence backsourcing considerations.</p>

Nowadays, information technology outsourcing (ITO) represents an established business practice in which a considerable number of companies are involved. Since the success of ITO is highly dependent on the exposure to ITO risks, studying the very risks is of great importance. The aim of this thesis consists in revealing the occurrence of specific ITO risks: supplier lock-in, hidden costs and the loss of control over outsourced IT. Further aims of this work are the revelation of measures which can be taken in order to face these risks and of the influences these risks have on backsourcing considerations. The first part of this thesis constitutes the theoretical framework which is based on the review of relevant literature. Within this part of the work, transaction cost theory and resource-based theory are presented and applied for the discussion of the specific ITO risks under consideration. Furthermore, a multidimensional approach is utilized in order to illustrate the various dimensions of ITO. By this means, the identification of situations in which the ITO risks under consideration appear is enabled. The empirical part of this exploratory research is based on a multiple case study. The data necessary for this qualitative research was gathered from telephone interviews conducted with both ITO clients and IT suppliers. The results of this study indicate that the ITO risks under consideration all pose considerable threats to ITO operations and that there are both internal and external measures ITO companies can take in order to face these risks. Furthermore, the risks under discussion influence backsourcing considerations.

No description available.

No description available.