Abstract This thesis describes the development of high bandwidth (~1 GHz) TOF (time-of-flight) laser range finder techniques for industrial measurement applications in the measurement range of zero to a few dozen metres to diffusely reflecting targets. The main goal has been to improve single-shot precision to mm-level in order to shorten the measurement result acquisition time. A TOF laser range finder consists of a laser transmitter, one or two receivers and timing discriminators, and a time measuring unit. In order to improve single-shot precision the slew-rate of the measurement pulse should be increased, so the optical pulse of the laser transmitter should be narrower and more powerful and the bandwidth of the receiver should be higher without increasing the noise level too much. In the transmitter usually avalanche transistors are used for generating the short (3–10 ns) and powerful (20–100 A) current pulses for the semiconductor laser. Several avalanche transistor types were compared and the optimization of the switching circuit was studied. It was shown that as high as 130 A current pulses are achievable using commercially available surface mount avalanche transistors. The timing discriminator was noticed to give the minimum walk error, when high slew rate measurement pulses and a high bandwidth comparator were used. A walk error of less than +/- 1 mm in an input amplitude dynamic range higher than 1:10 can be achieved with a high bandwidth receiver channel. Adding an external offset voltage between the input nodes of the comparator additionally minimized the walk error. A prototype ~1 GHz laser range finder constructed in the thesis consists of a laser pulser and two integrated ASIC receiver channels with silicon APDs (avalanche photodiodes), crossover timing discriminators and Gilbert cell attenuators. The laser pulser utilizes an internal Q-switching mode of a commercially available SH-laser and produces optical pulses with a pulse peak power and FWHM (full-width-at-half-maximum) of 44 W and 74 ps, respectively. Using single-axis optics and 1 m long multimode fibres between the optics and receivers a total accuracy of +/-2 mm in the measurement range of 0.5–34.5 m was measured. The single-shot precision (σ-value) was 14 ps–34 ps (2–5 mm) in the measurement range. The single-shot precision agrees well with the simulations and is better with a factor of about 3-5 as compared to earlier published pulsed TOF laser radars in comparable measuring conditions.

A relatively new application for the laser is in fluorescence microscopes. The fluo- rescence microscope needs a high power light source input. Using a laser source improves the precision of the microscope. A pulsed laser source enhances the performance of the fluorescence microscope and a laser diode can be overdriven without being damaged. The thesis investigates which properties of the laser pulses are needed regarding pulse width, pulse period and waveform. The thesis also investigates which properties are desired for the electrical pulses driving the laser, and how they can be generated using electrical components. The desired laser pulse should have a pulse width of 100 ps and a pulse period of 50 ns. The laser pulse should also have a well-defined wavelength, stable output power and it should be able to quickly turn on and off. To achieve this laser pulse, the desired input to the laser diode should have an input voltage of 5 V, an input current of 250 mA, a pulse width of 100 ps and a pulse period of 50 ns. For generating this pulse the chosen pulse generator, an SRD, should have low junction capacitance, low package capacitance and low package inductance. The chosen amplifier, a MESFET, desires low drain current and should have high transconductance and a large negative threshold voltage.