Thin film copper, indium, gallium, selenide (CIGS) solar cells are promising in the field of photovoltaic technology. To reduce material and fabrication cost, as well as increasing electrical properties of the cell, research is ongoing towards ultra-thin film solar cells (absorption layer thickness less than 500 nm). Ultra-thin CIGS solar cells has shown a decrease in interface recombination and improved optical properties when adding a rear contact passivation layer of aluminium oxide. In this work, the process of creating sub-micrometer features of a passivation layer using conventional optical lithography is investigated. To specify, the objective was to optimize the development conditions in the optical lithography process when fabricating equidistant line contacts in aluminium oxide with 800 nm feature size. It was found that line contacts with smaller feature sizes require longer development time, than line contacts with larger feature sizes. The experiments conducted showed that the pre-set development and exposure conditions used by the NOA group are not optimized for 800 nm or smaller line contacts. Further, for the optical lithography process, silicon substrates are not comparable with substrates of soda lime glass coated with molybdenum. Slight underdevelopment of a sample, showed line contacts smaller than the resolution of the laser used in the exposure – suggesting an alternative method of processing small line contacts with optical lithography.