Virtual reality (VR) head-mounted displays provide a high definition, immersive experi-ence to the viewer. However, most existing technologies have flaws like bulky design and vergence-accommodation conflict that may cause stress in the neck muscles, posture issues, nausea, motion sickness and dizziness. Similarly, augmented reality (AR) displays, which use transparent light modulators, exist, but they possess low field of view and a limited number of discrete depth planes when wide field of view and continuous depth would be ideal. The ultimate goal of my research is use leaky mode waveguide devices to create wide-view angle, transparent near eye holographic displays for AR with strong continuous depth accommo-dation and no vergence-accommodation conflict. The leaky mode platform has the advantages of low fabrication complexity and monolithic design. Unfortunately, bottom-exit leaky mode devices to date have had produced relatively small view angles. The specific objective of this thesis is to explore the use of static structures in leaky mode waveguide devices to increase field of view. In this work I will show that it is theoretically possible to achieve increased field of view with increased resolution and no overlap among view zones. My specific contributions to this research include: i) modeling of integrated Lithium Nio-bate device and testrig that contains quartz substrates on MATLAB, ii) construction of a simulator of the integrated device which involved fabrication of a prototype test rig for intermediate laser induced structures, iii) fabrication of intermediate diffractive structures by photolithography and by femto-second laser ablation which involved - 100 sample test, dose test and creation of sample femtograting on Lithium Niobate substrate. Results which are obtained from the modelling of inte-grated device and the prototype simulator are analysed. This analysis is provided in my manuscript to show how precise is the prototype simulator when compared with integrated device. The ob-tained result of the integrated device is 52.4541° where as it is 69.113° for prototype simulator. This effort was reported in a publication and presentation at Brigham Young University, Provo, Utah.