This article aims at growing (0002) InN film on LiGaO2 substrate by chemical vapor deposition (CVD). High purity InCl3 and metallic indium were used to react with NH3 respectively to form InN. Different experimental condictions such as growth temperature and the reaction pressure were adopted and compared to grow a well crystalline structure and smooth InN thin film. After one hour reaction, InN deposits on LiGaO2 substrate. X-ray diffraction, scanning electron microscope, atomic force microscope, photoluminescence, and transmission electron microscope of the samples were measured to investigate the crystal orientation, crystal quality, surface morphology, and microstructure. Based on the result, we can get the best condiction to grow the InN thin film. Through the experimental results, it is found that InN can not be successfully grown by using metallic indium. Oppositely, it is not difficulty to form InN by using InCl3. After a series of attempts on experiments, the temperature of 600 ¢J and the pressure of 400 torr are found to be the best condiction to grow the InN thin films.