Thesis (Ph. D.)--University of Texas at Austin, 1999. / Vita. Includes bibliographical references (leaves 227-230). Available also in a digital version from Dissertation Abstracts.

Thesis (Ph.D.)--Drexel University, 2008. / Includes abstract and vita. Includes bibliographical references (leaves 222-229).

Thesis (Ph. D.)--University of North Texas, Dec., 2008. / Title from title page display. Includes bibliographical references.

No description available.

Thesis (M. Phil.)--Hong Kong University of Science and Technology, 2003. / Includes bibliographical references (leaves 129-132). Also available in electronic version. Access restricted to campus users.

Lai Chung Wing = 金屬膜覆蓋在氧化鋅上之光學變化 / 黎頌榮. / Thesis submitted in: July 2005. / Thesis (M.Phil.)--Chinese University of Hong Kong, 2006. / Includes bibliographical references. / Text in English; abstracts in English and Chinese. / Lai Chung Wing = Jin shu mo fu gai zai yang hua xin shang zhi guang xue bian hua / Li Songrong. / Acknowledgements --- p.i / Abstract --- p.ii / 摘要 --- p.iii / Table of contents --- p.iv / List of Figures --- p.vi / Chapter Chapter 1 --- Introduction / Chapter 1.1. --- Motivation --- p.1-1 / Chapter 1.2. --- Literature Review --- p.1-2 / Chapter 1.3. --- Our Study --- p.1-4 / References --- p.1-6 / Chapter Chapter 2 --- Methodology and Experiments / Chapter 2.1. --- RF sputtering --- p.2-1 / Chapter 2.1.1. --- Setup of RF sputtering --- p.2-2 / Chapter 2.1.2. --- Sample preparation --- p.2-3 / Chapter 2.2. --- Scanning electron Microscope --- p.2-4 / Chapter 2.3. --- Cathodoluminescence --- p.2-5 / Chapter 2.3.1. --- Background of CL --- p.2-6 / Chapter 2.3.2. --- Room temperature CL studies --- p.2-7 / Chapter 2.3.3. --- Software: Casino --- p.2-8 / Chapter 2.3.4. --- Depth resolved CL studies --- p.2-10 / Chapter 2.3.5. --- Power dependent CL studies --- p.2-11 / Chapter 2.4. --- Photoluminescence / Chapter 2.4.1. --- General background of PL --- p.2-11 / Chapter 2.4.2. --- Room temperature PL studies --- p.2-12 / Chapter 2.4.3. --- Quantum efficiency measurement --- p.2-13 / Chapter 2.5. --- Optical transmission measurement --- p.2-13 / References --- p.2-15 / Chapter Chapter 3 --- Experimental Results and Data Analysis / Chapter 3.1. --- Study of Optical emissions of bare and Au-capped ZnO --- p.3-1 / Chapter 3.1.1. --- RT-luminescence of ZnO --- p.3-1 / Chapter 3.1.2. --- RT- Luminescence of Au- capped ZnO films --- p.3-2 / Chapter 3.2. --- RT-luminescence of metal capped ZnO --- p.3-7 / Chapter 3.3. --- Power dependent and depth Resolved CL --- p.3-10 / Chapter 3.3.1. --- Dependence of the CL on beam energy --- p.3-10 / Chapter 3.3.2. --- Dependence of the CL intensity on beam energy --- p.3-13 / Chapter 3.4. --- Dependence of metal thickness on the RT- luminescence --- p.3-17 / References --- p.3-19 / Chapter Chapter 4 --- Discussions / Chapter 4.1. --- General discussions --- p.4-1 / Chapter 4.2. --- Surface recombination Velocity / Chapter 4.2.1. --- Quantum Efficiency --- p.4-2 / Chapter 4.2.2. --- Simulation of the dependence of surface recombination velocity on the CL intensity of ZnO --- p.4-5 / Chapter 4.3. --- Effects of metallization on MgZnO/ZnO bilayer --- p.4-10 / Chapter 4.4. --- Surface plasmon --- p.4-13 / Chapter 4.5. --- PL measurement from the backside of substrate --- p.4-18 / Chapter 4.5.1. --- Au and Ag coating by sputtering --- p.4-19 / Chapter 4.5.2. --- Au and Ag coating by thermal evaporation --- p.4-21 / Chapter 4.6. --- Au coating spaced by MgO --- p.4-23 / Chapter 4.7. --- Optical transmission of Au-capped ZnO --- p.4-25 / Chapter 4.8. --- Cross Section images by AFM and TEM --- p.4-27 / Chapter 4.9. --- Application: optical improvement of semiconductor --- p.4-30 / Chapter 4.10. --- Summary --- p.4-32 / References --- p.4-34 / Chapter Chapter 5 --- Conclusions --- p.5-1 / Appendix I --- p.A / Appendix II --- p.K

Dissertation (Ph.D.)--Auburn University, 2005. / Abstract. Vita. Includes bibliographic references.

Thesis (M.S.)--Rochester Institute of Technology, 1992. / Typescript. Includes bibliographical references (leaves 139-142).

Thesis (M.S.)--Oregon State University, 2010. / Printout. Includes bibliographical references (leaves 65-69). Also available on the World Wide Web.

Semiconductor circuitry feature miniaturization continues in response to Moore 's Law pushing the limits of aluminum and forcing the transition to Cu due to its lower resistivity and electromigration. Copper diffuses into silicon dioxide under thermal and electrical stresses, requiring the use of barriers to inhibit diffusion, adding to the insulator thickness and delay time, or replacement of SiO2 with new insulator materials that can inhibit diffusion while enabling Cu wetting. This study proposes modified amorphous silicon carbon hydrogen (a-Si:C:H) films as possible diffusion barriers and replacements for SiO2 between metal levels, interlevel dielectric (ILD), or between metal lines (IMD), based upon the diffusion inhibition of previous a-Si:C:H species expected lower dielectric constants, acceptable thermal conductivity. Vinyltrimethylsilane (VTMS) precursor was condensed on a titanium substrate at 90 K and bombarded with electron beams to induce crosslinking and form polymerized a-Si:C:H films. Modifications of the films with hydroxyl and nitrogen was accomplished by dosing the condensed VTMS with water or ammonia before electron bombardment producing a-Si:C:H/OH and a-Si:C:H/N and a-Si:C:H/OH/N polymerized films in expectation of developing films that would inhibit copper diffusion and promote Cu adherence, wetting, on the film surface. X-ray Photoelectron Spectroscopy was used to characterize Cu metallization of these a-Si:C:H films. XPS revealed substantial Cu wetting of a-Si:C:H/OH and a-Si:C:H/OH/N films and some wetting of a-Si:C:H/N films, and similar Cu diffusion inhibition to 800 K by all of the a-:S:C:H films. These findings suggest the possible use of a-Si:C:H films as ILD and IMD materials, with the possibility of further tailoring a-Si:C:H films to meet future device requirements.