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by Lui Ka Man Raymond. / Thesis (Ph.D.)--Chinese University of Hong Kong, 1996. / Includes bibliographical references (leaves 190-202). / by Lui Ka Man Raymond. / Acknowledgements / Abstract / Table of contents --- p.i / Chapter Chapter 1 --- Introduction / Chapter 1.1) --- General overview --- p.1 / Chapter 1.2) --- The present study --- p.4 / Chapter Chapter 2 --- Theory / Chapter 2.1) --- Introduction --- p.8 / Chapter 2.2) --- Energy transfer from an incoherent radiation source --- p.9 / Chapter 2.3) --- Interaction between photons and solid --- p.11 / Chapter 2.4) --- Probability of a direct transition of amorphous germanium to liquid germanium --- p.12 / Chapter 2.5) --- Crystallization in the supercooled melts and interface stability of the crystallizing front --- p.20 / Chapter A) --- Homogeneous nucleation --- p.21 / Chapter B) --- Heterogeneous nucleation --- p.24 / Chapter C) --- Interfacial stability of the crystallizing front --- p.25 / Chapter Chapter 3 --- Sample preparation / Chapter 3.1) --- Introduction --- p.36 / Chapter 3.2) --- The sample preparation system --- p.36 / Chapter A) --- General description --- p.36 / Chapter B) --- The electron beam source and other components --- p.37 / Chapter C) --- The thermal pulse furnace (TPF) --- p.38 / Chapter 3.3) --- The substrates --- p.41 / Chapter 3.4) --- Sample preparations --- p.42 / Chapter Chapter 4 --- Dendritic crystallization of amorphous germanium on amorphous substrate / Chapter 4.1) --- Introduction --- p.47 / Chapter 4.2) --- Sample preparation and experimental methods --- p.48 / Chapter A) --- Sample preparation --- p.48 / Chapter B) --- Characterization methods --- p.50 / Chapter 4.3) --- Experimental results --- p.54 / Chapter 4.4) --- Discussions --- p.58 / Chapter A) --- Existence of a supercooled semiconductive liquid phase --- p.58 / Chapter B) --- Suppression of nucleation in the supercooled liquid --- p.61 / Chapter C) --- The effect of substrate width on the confinement of <110> crystal axes --- p.63 / Chapter D) --- The effect of annealing ambient --- p.63 / Chapter 4.5) --- Conclusions --- p.65 / Chapter Chapter 5 --- Transport properties of dendritic Ge films / Chapter 5.1) --- Introduction --- p.93 / Chapter 5.2) --- Theory --- p.93 / Chapter A) --- Expression of electrical drift mobility by the relaxation time approximation --- p.94 / Chapter B) --- Electrical drift mobility resulting from ionized impurity scattering --- p.98 / Chapter 5.3) --- Experimental methods --- p.102 / Chapter A) --- Sample annealing --- p.102 / Chapter B) --- Temperature-dependent electrical conductivity measurements (303 K - 523 K) --- p.102 / Chapter C) --- Temperature-dependent Hall mobility measurements (20 K - 300 K) --- p.103 / Chapter 5.4) --- Experimental results --- p.105 / Chapter A) --- Conductivity in the high temperature range K - 303 K --- p.105 / Chapter B) --- Sheet conductance in the temperature range 300K - 20 K --- p.105 / Chapter C) --- Hall mobility in the temperature range 300K to 20 K --- p.107 / Chapter 5.5) --- Discussions --- p.108 / Chapter A) --- Temperature dependence of electical conductivity --- p.108 / Chapter B) --- Temperature-dependent Hall mobility measurements --- p.111 / Chapter 5.6) --- Conclusions --- p.115 / Chapter Chapter 6 --- Crystallization of amorphous germanium film on (001) GaAs wafers / Chapter 6.1) --- Introduction --- p.131 / Chapter A) --- General review --- p.131 / Chapter B) --- The present study --- p.132 / Chapter 6.2) --- Sample preparation and experimental methods --- p.134 / Chapter A) --- Sample preparation --- p.134 / Chapter B) --- Characterization methods --- p.135 / Chapter 6.3) --- Experimental results --- p.143 / Chapter A) --- Epitaxial regrowth of a-Ge films on semi-insulating (001) GaAs --- p.144 / Chapter B) --- Influence of the substrate and the initial thickness of a-Ge film on the process of crystallization --- p.146 / Chapter C) --- Results from electron spectroscopy and EDX dot-map --- p.148 / Chapter D) --- The electrical property of the Ge/GaAs heterojunction --- p.150 / Chapter 6.4) --- Discussions --- p.150 / Chapter A) --- Substrate dependence --- p.150 / Chapter B) --- Sample thickness dependence --- p.153 / Chapter C) --- Regrowth mechanism --- p.154 / Chapter 6.5) --- Conclusions --- p.156 / Chapter Chapter 7 --- Conclusions and suggestions for further studies / Chapter 7.1) --- Conclusions --- p.183 / Chapter A) --- On amorphous substrate [Corning 7059 glass] --- p.183 / Chapter B) --- On crystalline substrate [GaAs (001) wafer] --- p.185 / Chapter 7.2) --- Suggestions for further studies --- p.186 / Chapter A) --- Synthesis of Ge/GaAs heterojunction with abrupt interface --- p.186 / Chapter B) --- Applying the thermal pulse annealing method to other systems --- p.186 / Chapter C) --- Studying the size and shape-dependence of Raman spectrum by using sample with highly uniform grain size and well-defined geometry --- p.187 / Appendix A --- p.188 / References --- p.190

No description available.

Thesis (Master)--İzmir Institute of Technology, İzmir, 2002. / Includes bibliographical references (leaves. 98-102).

No description available.

by Kim-chung Koon. / Chinese title: / Bibliography: leaves 108-112 / Thesis (M.Phil.)--Chinese University of Hong Kong, 1983

by Ong Chung Wo. / Bibliography: leaves 118-120 / Thesis (M.Ph.)--Chinese University of Hong Kong, 1986

Thesis (Ph. D.)--University of Oregon, 2000. / Typescript. Includes vita and abstract. Includes bibliographical references (leaves 168-174). Also available for download via the World Wide Web; free to University of Oregon users.

No description available.

A study was made of the thermoreflectance spectra of a series of five thin film samples spanning the range of composition of the amorphous Ge(x)Te(1-x) binary semiconductors. The experiment was performed over photon energies ranging from 0.5 ev in the infrared to 6 ev in the ultraviolet. The results are plotted for energies above the absorption edge. In the Ge-rich materials there was little structure in the thermoreflectance spectrum. However, there was the development of two peaks in the spectrum as the Te content was increased beyond a 50:50 mixture. The results are analyzed in terms of optical constants and electronic structure. It was found that the energy separation of the peaks in the thermoreflectance corresponded closely to the separation of peaks in the valence band density of states seen in photoemission experiments. The existence of the two peaks indicates a "lone pair" band of energy levels positioned between the valence and conduction bands. This is aditional evidence of two-fold coordination of the Te atoms in these materials. At energies below the band gap there was strong interference due to increased transimission of the film. This made the analysis more complicated. A procedure is discussed for extracting from the modulated interference the specific changes occurring in the optical constants with temperature modulation.