Halide perovskites have some unique advantages as optoelectronic materials. Metal halide perovskites have been attracting enormous attention for applications in optoelectronic devices such as photodetectors, light-emitting devices and field-effect transistors. The remarkable semiconducting properties have been intensively investigated in recent years. However, the performance of optoelectronics devices based on the conventional perovskite is limited by the ion migration, the mobility of the carriers and the light absorption in the near infrared region and so on. In a decade, numerous attempts are studied to further breakthrough the limitations using both physical and chemical methods. This dissertation is devoted to overcoming the drawbacks by integrating the state-of-art perovskite with other functional materials and to further deciphering the carrier transport mechanics behind the mixed dimensional heterostructures. Field-effect transistors are the workhorse of modern microelectronics. Proof-of-concept devices have been made, utilizing solution-processed perovskite as transistors. Beyond the Field-effect transistors, photodetectors can be construct with a transistor configuration. In this dissertation, we exploited Au dimers with structural darkness to enhance the light harvesting, and utilize sorted semiconducting single-walled carbon nanotubes to enhance the conductivity of thin-film. At last, we developed a hybrid memtransistor, modulable by multiple physical inputs using hybrid perovskite and conjugated polymer heterojunction channels to realize neuromorphic computing.