Diamond-like carbon (DLC) film exhibits an extreme hardness, low friction coefficient, chemical stability, heat conductivity, high resistance, and high optical transparency. There properties lead to remarkable on industrial applications Diamond-like carbon films were deposited onto the silicon (100) and ITO glass substrates. Under the same deposition conditions, the characteristics of DLC films were evaluated by the variations of deposited parameters such as the applied voltage, deposition temperature the concentrations of electrolyte; acetic acid. The properties due to the different substrate were compared and discussed in detail. In experimental work, the properties of DLC film were conducted by various measurements. Scanning electron microscopy can make an insight into the surface morphology also to reveal the uniformity of the DLC films. For the I-t curves of DLC film growth, it can be used to study of the growth mechanism by correlation the surface morphology observed by Scanning electron microscopy (SEM). The transmission, refraction index and optical band gap of DLC film was measured by the N &K analyzer. Finally, the hydrogen content, composition and microstructure of DLC films were characterized by the FTIR and XPS analyze According to above results, DLC film using the electrolyte of acetic acid was more difficult to deposit on Silicon substrate because the very high activation energy and the high hydrogen ion existing in DI water firstly deposited on the surface of Si substrate. For FTIR measurement, The absorption wavenumber of various bonding observed were positioned at 610 cm-1,680 cm-1,1100 cm-1 and 3600 cm-1~3800 cm-1and to be cauterized as the bonding of Si-H¡BSi-O and O-H, respectively. The absorption peaks within the range from 2800 cm-1 to 3100 cm-1 were missing. Peaks observed were attributed to the bonding of Si-C¡B SP3 C-C¡B C-O¡BC-C¡BC=O and C=C and the CHn bonding was missing on the surface of substrate. The reaction mechanism of DLC deposition can be suggested from the results of measurements. As bias voltage applied, the acetic ion; CH3COO- were attracted by the Anode as the state of C¡]Anode¡^-OOCCH3, and then to give electron and form the CH3+ion»PCO2. The hydrogen ion and methyl ion were attracted by cathode. The competitive reaction was built between ions to deposited DLC films and/or to form Si-H. However, experimental results show that the last was preferred and for forming the DLC film was forbidden.