Abstract In this literary, we discuss with structure and morphology improvement of GaN epilayer on c-sapphire by multi-step method in molecular-beam epitaxy. Our research is caused for the critical results of defect in GaN epilayer and rough surface morphology. In order to solve these problems we used a novel technique which we called multi-step method. In this thesis, the results of X-ray, SEM, AFM all demonstrated the achievement in our composition. However, we obtained the results of full width of half maxima (FWHM) of (0002) and (10 2) XRD rocking curves with 60~120 arcseconds and 700~ 1200 arcseconds from a series of multi-step samples respectively. Comparing with previous measurement, multi-step method is relatively superior, and the measurement of AFM roughness is under 2 nm from the series of multi-step samples. If we discuss the flat area further, we can get smoother surface which roughness is about 0.4 nm. It is obviously to recognize the flat and rough regions, but in SEM image we made sure that the flat region occupied the greater part of surface. So, in this literary we verified that the method of multi-step can improve the structure and morphology of GaN by molecular-beam epitaxy.