The electro-optical properties of the ZnO thin film are affected by the deposition parameters. In this study, we find the optimum growth parameters to grow high quality ZnO film. We change the RF power to adjust the surface roughness. The higher RF power will result in a higher deposition rate and rough surface roughness. We obtained an optimum surface roughness of 1.811nm at 50W RF power. The ZnO films have more than 80% transmittance in visible range, and obvious absorption in UV range. A significant peak in the wavelength of 385nm is observed in PL measurement. For the electric characteristics, the resistivity of as-grown ZnO films is high and decreases with post annealing treatment. We have obtained a minimum resistivity of 2.764¡Ñ10-2(£[-cm) at 700oC annealing treatment. Under the fixed 50RF power and 5sccm Ar flux, the optical characteristics and the crystal qualities are worse in the lower pressure (below 5mTorr). The ZnO films have lowest resistivity of 1.826¡Ñ10-2(£[-cm) in the 15mTorr and, strongest PL intensities in 25mTorr after 700oC annealing treatment. After the optimum growth condition, we enhance the optical characteristics through the surface Plasmon effect of the metal nanoparticles. The nano gold particles in the diameter of 50nm and 200-250nm can be obtained under the 5nm and 10nm Au film deposition and annealing at 700oC, respectively. For the optical characteristics, the PL intensity and optical transmittance are enhanced dependent on the size and position of the gold nanoparticles. For the electric characteristics, the n-ZnO/p-Si shows a good rectification effect. The mechanisms of current conduction are space charge current limit, and tunnel current. Sample with 50nm diameter has a significant space charge current limit mechanism. In the C-V measurement, we observed the hysteresis curve in the sample with gold nanoparticles. The sample with larger gold particles have larger memory window of ¡µVFB=0.23.